氮化硅 的英文怎麼說

中文拼音 [dànhuàguī]
氮化硅 英文
nitride, silicon
  • 氮 : 名詞[化學] nitrogen （7號元素, 符號n）
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  1. Analysis and verification of silicon nitride super - micro powder synthesis with fbr - cvd technique

    法制氮化硅超微粉過程分析及實驗驗證
  2. Hydrogenated amorphous silicon nitride ( a - sinx : h ) films have been deposited by helicon wave plasma enhanced chemical vapor deposition ( hwp - cvd ), the effect of sih4 / n2 rate on the properties of the samples is systematically studied, and the critical experiment condition is obtained under which a - sinx : h films with different compositions are deposited

    本工作採用螺旋波等離子體化學氣相沉積（ hwp - cvd ）方法制備了氫化非晶氮化硅（ a - sin _ x ： h ）薄膜，系統地研究了不同反應氣體配比對薄膜特性的影響，得到了沉積不同組分a - sin _ x ： h的典型實驗條件。
  3. The co - p alloy coating of powder was more and thickness of plate was incrassate with the decreasing of the loading

    裝載量在1 10g / l之間，可以實現納米氮化硅粉末的完全包覆，得到鍍覆均勻、分散性較好的復合粉末。
  4. Standard specification for silicon nitride bearing balls

    氮化硅軸承滾珠標準規范
  5. Synthesis of nanoporous silicon nitride - based materials with various novel morphologies in nonaqueous media

    非水體系合成多種形貌氮化硅基納米孔材料
  6. Reactively sintered silicon nitride seal ring for mechanical seal

    機械密封用反應燒結氮化硅密封環
  7. The influence of deposition parameters on chemical structure and optical properties of silicon carbonitride film

    沉積參數對碳氮化硅薄膜化學結構及光學性能的影響
  8. Chemical analysis for silicon nitride bonded silicon carbide product. determination of free silicon content. molybdenum blue photometric method

    氮化硅結合碳化硅製品化學分析方法.鉬藍光度法測定游離硅量
  9. The tested materials include ( 100 ) silicon wafer, ( 110 ) silicon wafer, poly - silicon thin film, dry oxidized silicon dioxide thin film, wet oxidized silicon dioxide thin film, lto thin film, standard lpcvd silicon nitride film, low stress lpcvd silicon nitride film, alumni nitride film, zinc oxide film etc. in the nanoindentation experiment of the single crystal silicon, two different mechanical phases are observed at different indentation depth

    用納米壓入法對（ 100 ）單晶硅及（ 110 ）單晶硅、多晶硅薄膜、干氧薄膜、濕氧薄膜、 lto薄膜、標準氮化硅薄膜、低應力氮化硅薄膜、氮化鋁薄膜、氧化鋅薄膜等重要材料的楊氏模量和納米硬度進行了系統地測量。報道了單晶硅在壓入過程中觀測到的兩個力學相的變化。
  10. Performance for a piezoresistive transducer pressure sensor to thermal and pressure environments can be predicted by finite element method. a simplified 1 / 8 model, considering silicon dioxide and nitride process as well as stack anodic bonding and adhesive bonding processes, was developed. the fem results were found to be comparable to experimental data. case studies suggested that pyrex stack induces certain amount of non - linearity, while it isolates hard epoxy nonlinear effect. flexible epoxy bonding or soft adhesive bonding is preferred to the packaging process. the viscoelasticity and viscoplasticity of bonding material will result in hysteresis and drift errors to sensor output. however, soft adhesive s influence on sensor can be ignored under relative stable environments. more over, detailed design and process information will help to improve modeling application

    熱、壓環境下壓阻變換壓力傳感器的性能可以通過有限元方法預測.這里研究了簡化的1 / 8模型，模型考慮了二氧化硅和氮化硅生成過程及堆陽極鍵合和膠粘結合過程.結果發現有限元預測結果和實驗數據具有可比性.範例研究表明，硼硅堆導致產生一定的非線性，但它隔離了硬環氧樹脂的非線性.在包裝過程中最好使用柔性環氧黏合或軟黏膠性結合.黏合材料的黏彈性和黏塑性將會導致傳感器輸出的滯后和漂移誤差.然而，在相對穩定的環境下，軟黏合劑對傳感器的影響可以忽略.此外，詳細的設計和過程信息有助於提高模型的適用性
  11. The azotized silicon factory possesses the domestic advanced azotized silicon sintering equipments

    氮化硅廠擁有國內先進的氮化硅燒結設備。
  12. The method has been used in experiments of shock activating si3ni4 powder materials, and the results are satisfactory

    此設計用於化爆產生平面動載的氮化硅粉體沖擊波活化研究，取得了較為理想的測試結果。
  13. The results show that under the same lapping conditions the si3 n4 ball has the lowest material removal rate and the best roundness and roughness, followed by zro2, al2o3, and sic ball

    結果表明：在相同的研磨條件下，具有長柱狀晶粒的氮化硅陶瓷球加工速率最低，但圓度和表面粗糙度最容易控制；氧化鋯和氧化鋁陶瓷球表面質量次之，碳化硅陶瓷球加工速率最高，圓度和表面粗糙度最難控制。
  14. The influence of sinx deposited by pecvd in different condition, especially changing deposition temperature, on the gaas surface after sulfur passivation is measured by sims analysis combined with the test for direct current breakdown characteristics

    用sims分析結合器件直流特性測試，比較了在不同條件下淀積的氮化硅對gaas硫鈍化表面的作用，特別是淀積溫度分別為80 、 80 / 230 、 230時對硫鈍化效果的影響。
  15. Sinx thin film can improve the minor carrier lifetime of both mono and poly silicon by the simultaneous surface and bulk passivation

    9 ）的提高；先沉積氮化硅薄膜再氫等離子體處理能得到更好的鈍化效果。
  16. However, the refractive index will increase with the increase of the flow ratio of sifu / nhs, slightly increase with the increase of substrate temperate, and decrease with the increase of rf power. by measuring the passivation results of hydrogen plasma and sinx thin film, we found an evident improvement of minor carrier lifetime in polycrystalline silicon after hydrogen plasma treatment, although it has little to do with the annealing temperature and time. the hydrogen contained in sinx thin film can enhance the carrier mobility of monocrystalline silicon, but after annealing at high temperature the mobility turns down

    通過測試氫等離子體鈍化和氮化硅薄膜鈍化的效果，實驗還發現氫等離子體處理對多晶硅材料的少子壽命提高作用比較明顯，但是這種提高作用與處理溫度以浙江大學碩士學位論文王曉泉2003年5月及時間的關系不大；氨化硅薄膜中的氫對單晶硅的載流子遷移率提高有一定作用，但經過高溫處理后這種作用消失；氮化硅薄膜能提高單晶硅和多晶硅的少子壽命，具有表面鈍化和體鈍化的雙重作用；氫等離子體和氮化硅薄膜都能有效地提高單晶和多晶電池的短路電流密度，進而使電池效率有不同程度（絕對轉換效率0
  17. Current researches, applications, preparation and structure of si3n4 are summarized in this paper. a new conclusion is drawn that silicon wafer can react with nitrogen at the temperature higher than 1100 and in super - pure nitrogen by direct - nitridation of silicon at the temperature from 800 to 1200. the prepared silicon nitride samples are tested by xps ( x - ray photoelectron spectroscopy ), sem ( scanning electron microscopy ), optical microscopy, xrd ( x - ray diffraction ) and edx ( energy dispersive x - ray analysis )

    通過矽片在800到1200各個溫度和各種氮氣氣氛下的氮化處理的實驗結果，報道了不同與其他研究者的氮化條件，矽片在氮氣保護的熱處理中的氮化條件為：高於1100的溫度和高純氮的氣氛條件，同時對該氮化硅薄膜進行了金相顯微鏡、掃描電鏡（ sem ） 、 x射線衍射儀（ xrd ） 、 x射線光電子譜（ xps ） 、 x射線能譜儀（ edx ）和抗氧化性等測試和分析。
  18. However, the si3n4 is non - crystalline when power is 100w or 150w. the agglomeration and the distribution were important parameter of nanopowder, which were analyzed by the laser light scattering particle - size test instrument. but the result appeared great error because of this instrument itself and high requirement to sample

    粒徑分佈和團聚是納米粉體材料重要的表徵手段，採用激光散射技術對納米氮化硅粉末粒徑的分佈和團聚進行分析，激光散射技術由於本身的限制和對樣品的高要求，測量納米材料的分佈有較大的誤差。
  19. A design of using lpcvd silicon - rich silicon nitride of low residual stress as the resonant beam is proposed based on technology of sacrificial porous silicon and a new type peninsula structure is also proposed for high pressure sensitivity

    提出了基於多孔硅犧牲層技術的利用lpcvd生長的低應力厚的富硅氮化硅作為諧振梁的壓力傳感器結構設計。為了提高靈敏度，還提出了一種半島結構。
  20. A convenient and effective testing system for plastic eacapsulated microcircuit is designed. the testing results show that si3n4 passivation on test chip has the better protection than that without si3n4 passivation, and silicone gel coating can prevent moisture from the surface of the chip more effectively than polyimide coating, and molded plastic from varied manufacturers has the different effect on microcircuit due to its diversity

    貯存試驗的結果表明，在晶元上加氮化硅鈍化層比不加鈍化層具有更好的防護效果；與聚酰亞胺膠內塗層相比，硅酮膠內塗層更能有效地阻止水分到達晶元的表面；由於材料本身的差異，不同廠家生產的模塑封裝材料對微電路的影響也不同。
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