氮化硼薄膜 的英文怎麼說

中文拼音 [dànhuàpéngbómó]
氮化硼薄膜 英文
boron nitride pellicle
  • 氮 : 名詞[化學] nitrogen （7號元素, 符號n）
  • 硼 : 名詞[化學] （非金屬元素） boron （b）
  • 薄 : 名詞[方言] （浮萍） duckweed
  • 膜 : 名詞1. [生物學] （像薄皮的組織） membrane 2. （像膜的薄皮） film; thin coating
  • 薄膜 : thin film; film; diaphragm
  1. The refractive index ( at 632. 8nm ) of cbn thin film with 92. 8 % cubic phase content is measured to be2. 19 by ellipsometer

    用橢偏儀測得，對于波長為632 . 8nm的光，立方相含量為92 . 8的氮化硼薄膜的折射率為2 . 19 。
  2. The i - v and c - v characteristics of bn ( n - type ) / si ( p - type ) heterojunctions have been studied to close to that of ideal heterojunct ion. 6 in this paper the mechanism of cbn formation and bn films n - type doping as well as bn ( n - type ) / si ( p - type ) conducting

    6文章還對立方氨化硼薄膜的成核和生長機理，氮化硼薄膜的n型摻雜機制和bn型）侶i …型）異質結的電流輸運機制進行了探討。
  3. Boron nitride ( bn ) thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system, with hexagonal boron nitride ( hbn ) target and working gas of argon ( or mixture of nitrogen and argon )

    使用射頻濺射（ rf ）系統，靶材為燒結的六角氮化硼（ hbn ） ，工作氣體為氬氣（或氬氣和氮氣的混合氣） ，在硅襯底上沉積氮化硼薄膜。
  4. 2 studying of the properties of cbn thin films afm showed that cbn thin film delaminated from substrate obviously. basing xps, we calculate the nib ratio to be 0. 90 that is closing to unity, and the thickness of hbn layer on cbn layer that is about 0. 80 nm

    根據x射線光電子能譜，計算得到立方氮化硼薄膜中的n和b的原子數比為0 . 90 ，接近理想化學配比1 ；立方氮化硼薄膜頂層的六角氮化硼的厚度約為0 . 80nm 。
  5. 1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied. boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system. the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon

    研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。
  6. Either the boron nitride ( bn ) thin films with different cubic phase content were deposited on n - type si ( 111 ) and fused silica substrates by radio frequency ( rf ) sputtering using two - stage deposition process. the films were characterized by fourier transform infrared ( ftir ) spectroscopy. the transmittance te ( ) and reflectance re ( ) were obtained as a function of incident photo wavelengths and the thickness of films was measured by alpha - step. the absorption coefficient was calculated from te ( ) and re ( ). the optical band gap ( eg ) of the films was determined by effective medium form of formula containing eg

    本文還研究了立方相含量與光學帶隙的關系，在n型si （ 111 ）片和熔融石英片上沉積出不同體積分數的立方氮化硼薄膜，薄膜的成分由傅立葉紅外吸收譜標識；用紫外-可見分光光度計測量了沉積在石英片上的bn薄膜的透射光譜te （ ）和反射光譜re （ ） ，薄膜的厚度用臺階儀測得。
  7. For obtaining cbn thin films, it is necessary that substrate negative bias voltage is not lower than 90v and r. f power is not lower than 200w

    若要得到立方氮化硼薄膜，負偏壓不能低於90v ，功率不能低於200w 。
  8. The results showed that the friction factor of bn film was about half of that of the steel based materials, and the cohesion between film and substrate could obviously be increased by the ni - p interface layer

    結果表明：氮化硼薄膜的摩擦因數約為鋼基材料的一半，中間層鎳磷合金的加入使薄膜結合力顯著提高。
  9. It is showed that after doping s the bn thin films of n - type conductivity are obtained

    研究表明，未摻雜的氮化硼薄膜電阻率為為1
  10. 2 for the first time, rf sputtering method and vapor doping method have been combined to prepare n type bn films. bn films doped with s are n type conductivity

    摻s后的氮化硼薄膜表現出n型導電，未摻雜的氮化硼薄膜的電阻率1 . 8 1011 cm ，摻雜后的氮化硼薄膜的電阻率為7 . 3 107 cm 。
  11. In the end of the paper, we discussed the particular advantage of rf - pepld for deposition of c - bn thin films and the important meaning of the nanothermodynamic theory proposed by this paper

    文章最後提出了常溫下rf 『 pepld方法沉積立方氮化硼薄膜的獨特優勢並討論了本文提出的金剛石的納米成核熱力學理論的重要意義。
  12. 1 the influence of process parameters for depositing cbn films was studied all round

    1系統地研究了工藝參數對制備立方氮化硼薄膜的影響。
  13. In the paper, the two - step approach, in which the deposition procedure was divided into two sections by decrease the substrate temperature or the bias voltage, was used in order to synthesize c - bn film by the conventional js - 450a rf system. the influence of process parameters for nucleation and growth of depositing c - bn was studied separately

    本論文使用傳統的js - 450a射頻濺射系統利用兩步法（降溫降偏壓法）沉積立方氮化硼薄膜，分別研究了各工藝參數對立方氮化硼成核和生長的影響。
  14. Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ), assisted with substrate negative bias. in this paper, we primarily studied the effect of laser energy density, radio frequency power, substrate bias and depositing time on the growth of c - bn films, and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature

    本文採用偏壓輔助射頻等離子體增強脈沖激光沉積（ rf - pepld ）方法在常溫下（ 25 ）制備立方氮化硼（ c - bn ）薄膜，初步研究了薄膜沉積參數：激光能量密度、射頻功率、基底負偏壓和鍍膜時間對立方氮化硼薄膜生長的影響，並分析了常溫下用rf - pepld方法沉積立方氮化硼薄膜的形成過程和機理。
  15. The c - bn thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system. the c - bn / si thin film heterojunctions have been fabricated with doping into n - type ( p - type ) semiconductor by implanting s ( be ) ions into them. i - v curves of bn / si heterojunctions were obtained by the high resistance meter, c - v curves of bn / si heterojunctions were obtained by the c - v meter

    使用rf射頻濺射系統，在si襯底上沉積氮化硼薄膜，用離子注入的方法在制備好的bn薄膜中分別注入s和be ，成功的制備了bn / sin - p和bn / sip - p薄膜異質結，用高阻儀測得bn薄膜表面電阻率和bn / si薄膜異質結的i - v曲線，用c - v儀測得bn / si薄膜異質結的c - v曲線。
  16. Plasma enhanced chemical vapour technique ( hf - pecvd ) on monocrystalline silicon and quartz glass substrates under the low temperature. the effects of ultrasonic pre - treating of substrates, temperature, r. f

    系統地研究了襯底的超聲預處理工藝、沉積溫度、射頻功率以及氫氣對氮化硼薄膜的生長、組成及表面形貌結構的影響。
  17. Recently there has been an extensive worldwide effort to synthesize bn films and investigate ultraviolet sensitive properties of bn, which has an important significance to the development of ultraviolet band detecting

    氮化硼薄膜材料的制備及其紫外光敏性能研究，是近年來寬禁帶半導體材料研究的熱點課題，對紫外波段信息探測領域的發展有重大意義。
  18. Based on these above, the practical realization of bnxpi - x film applied in the ultraviolet band detecting device - ultraviolet liquid crystal light valve is discussed. the experiments and theory analyses prove that bnxpi - x film is a suitable candidate for ultraviolet liquid crystal light valve

    在以上對氮化硼薄膜以及磷摻雜氮化硼薄膜制備工藝、性能和微結構研究分析的基礎上，本論文還探討了薄膜材料在紫外空間光探測器件?紫外液晶光閥上應用的可行性。
  19. Bn films doped with s are n type conductivity. undoped bn films exhibit a resistivity of 1. 8 1011 cm and those of doped are 2. 13 105 cm ， decreased by six order of magnitude. s fountain temperature and substrate temperature impact the resistivity evidently

    S源加熱溫度對氮化硼薄膜的電阻率有直接影響，表現在隨著s源加熱溫度的升高，氮化硼薄膜的電阻率下降的趨勢加快。
  20. It is concluded that for cvd method the cubic phase content and adhesion are highly effected by the crystal lattice mismatch between c - bn and substrate materials, however, for sputter method the crystal lattice mismatch between c - bn and substrate materials affects the quality of c - bn thin films very little. 5 n - type doping of bn thin films and preparing of bn ( n - type ) / si ( p - type ) heterojunctions adding s into the mixture of argon and nitrogen used as working gas, we sputtered 1ibn target to deposit bn thin films so as to study the n - type doping of bn thin films, and bn ( n - type ) / si ( p - type ) heterojunctions were prepared

    5實現了氮化硼薄膜的n型摻雜，成功制備出bn型）乃…型）異質結並且首次系統研究了其卜v和cv特性我們用射頻濺射法濺射六角氨化硼靶，在工作氣體氮和氮中混入s ，沉積氮化硼薄膜，以研究氮化硼薄膜的n型摻雜，並得到bnh型）侶i …型）異質結。
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