氮脈沖 的英文怎麼說

But there has been not correspondingly control system for it by far. ln this thesis a pulse nitrogenous conveying control system based on profibus is designed and achieved on the thinking of modularizing the pulse nitrogenous conveying system, which can be used for different the pulse nitrogenous conveying system and added new control cells. the thesis reviewed systematically the pulse nitrogenous conveying system in practical, and makes the understanding that the system is composed of standard gas storage cell, conveying equipment cell and target container ceil. then a common modularized control system project is designed and achieved by structurized programming orienting process, which consists of four control models, respectively for gas storage cell, for conveying equipment cell and for target container cell

本文綜合實際使用的氮保護脈沖氣力輸送系統，把氮保護脈沖氣力輸送系統分為標準化的氣源設備單元、發送設備單元和目的料倉設備單元，在此基礎上，設計了用於氮保護脈沖氣力輸送系統的通用模塊化控制方案，採用面向過程的結構化編程思想，基於profibus現場總線，實現了組成該方案的四類控制模塊：氣源單元控制模塊、發送單元控制模塊、目的料倉單元控制模塊和通訊處理控制模塊。

Pulse glow ion nitrogen furnace

脈沖式輝光離子氮化爐

The presented thesis studies the gas discharge of lab6 electrodes, the paper analyses the impacts of gas press and electrodes separation on the ignition voltage and voltage drop, and makes low gas pressure, lower than 10pa, discharge switch tubes, with gas of helium and nitrogen, electrodes gaps of 5mm. the paper studies the tubes ’ discharge performances, and the impacts of discharge process on the electrodes

分析直流工作條件下，以氬氣、氮氣、氦氣為工作氣體時，氣體的壓強、極間距對著火電壓和管壓降的影響，並製作低氣壓（ < 10pa ）下的氣體放電開關管（放電氣體為氮氣和氦氣，極間距為5mm ） ，研究其在直流和脈沖下的放電特性，以及放電過程對電極的影響。

( 5 ) the intensity and s / b of libs are investigated in detail at the different buffer gas, gas pressure, and laser power. the results show that under the 120 mj laser energy, for ar the best s / b is at 200 torr pressure, but for air at 100 torr and he at 300 torr. duration of atomic spectra in ar is longer than that in air

（ 5 ）實驗測定了不同的緩沖氣體和氣壓以及不同的入射激光脈沖能量對原子譜線強度和背景光的影響，結果顯示在氬氣環境下，當氣壓約為200torr 、激光的能量約為120mj時， libs的s b最大；在空氣和氦氣中獲得最佳s b時的氣壓約分別為100torr和300torr ；原子譜線在氮氣環境中持續的時間要比在空氣中持續的時間長。

Ground - experimental study on the performance of loop heat pipes

液氮溫區同軸脈沖管製冷機的實驗研究

Chemical analysis methods for non - rare earth impurities of rare earth metals and their oxides determination of oxygen and nitrogen content impulse - infrared and impulse - thermal conductance absorption method

稀土金屬及其氧化物中非稀土雜質化學分析方法氧氮量的測定脈沖-紅外吸收法脈沖-熱導法

The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。

The second harmonic produced by a q - switched nd : yag laser with wavelength e = 532 nanometers ( nm ), pulse width 0 nanoseconds ( ns ) and repetition frequency i = 1 hz was used to bombard a highly pure solid hexagonal bn ( h - bn ) target ( 96 % ), with diameter of 2cm. in a vacuum chamber, boron nitride ( bn ) film was deposited on the single - crystal silicon substrate

利用高能脈沖激光（波長= 532nm ，頻率= 1赫茲，脈寬= 10納秒）在常溫下轟擊燒結的高純六方氮化硼（ h - bn ）靶，在真空反應室中將bn薄膜沉積在單晶硅基底上。

Kipp vacuum sucker - vod erosionresistance nitrdize technics and its application

抽油桿脈沖真空抗蝕氮化工藝及其應用

Study on the corrosive endurance of pulse vacuum nitriding coating oil steel

脈沖真空氮化油管鋼的耐蝕性測試研究

Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ), assisted with substrate negative bias. in this paper, we primarily studied the effect of laser energy density, radio frequency power, substrate bias and depositing time on the growth of c - bn films, and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature

本文採用偏壓輔助射頻等離子體增強脈沖激光沉積（ rf - pepld ）方法在常溫下（ 25 ）制備立方氮化硼（ c - bn ）薄膜，初步研究了薄膜沉積參數：激光能量密度、射頻功率、基底負偏壓和鍍膜時間對立方氮化硼薄膜生長的影響，並分析了常溫下用rf - pepld方法沉積立方氮化硼薄膜的形成過程和機理。

Thirdly, we developed a spectrometer for spectrum diagnosis of soft x - ray pulse sources, and used it to measure spectra of liquid o2, co2, cf4, kr and xe spray target lpp sources in 6 - 20nm band for 8x 10uw / cm2 laser irradiance the results coincide with cowan calculation fairly well

其次，利用低溫製冷技術研製出一臺可連續控溫的液體微滴噴射靶lpp光源。光源具有連續和脈沖噴射兩種工作模式，能使用多種氣?液相變溫度高於液氮溫度的非腐蝕性氣體工作。

Keywords : gims, ion source, anode layer, sputtering, tin, ion plating ， medium frequency, pulsed dc

中文關鍵詞：氣離濺射、離子源、陽極層流、濺射、氮化鈦、離子鍍膜、中頻、脈沖直流。

This article reviewed the forming process of pulse corona plasma desulfurization, denitrogenation and dust removal, analyzed the theory, introduced the working flow chart briefly, pointed out the main problem and key technology being researched

該文對脈沖電暈等離子體脫硫脫氮與除塵技術的形成過程進行了回顧，對其理論作了分析，並簡介了工藝流程，還指出了目前存在的主要問題和需研究的關鍵技術。

First, a 1 - ( 2 - pyridylazo ) - 2 - naphthol modified carbon paste electrode was fabricated and a differential pulse cathodic voltammetric method was developed for the sensitive and selective determination of co ( 11 ). second, the solid paraffin wax carbon paste electrode was modified by the complex of dithizone with 13 - cyclodextrin crossing - linking polymer

第一，制備了1 - （ 2 -吡啶偶氮） - 2 -萘酚（ pan ）修飾碳糊電極，建立了微分脈沖伏安法測定了co （ ）的方法，探討了電極制備與使用的最佳條件與電極機理。