注入層 的英文怎麼說

中文拼音 [zhùcéng]
注入層 英文
input horizon
  • : Ⅰ動詞1 (灌入) pour; irrigate 2 (集中) concentrate on; fix on; focus on 3 (用文字來解釋字句)...
  • : Ⅰ動詞1 (進來或進去) enter 2 (參加) join; be admitted into; become a member of 3 (合乎) conf...
  • : i 量詞1 (用於重疊、積累的東西 如樓層、階層、地層) storey; tier; stratum 2 (用於可以分項分步的...
  • 注入 : pour into; empty into; inpouring; injection; infusion [拉丁語]; infunde [法國]; abouchement; influxion
  1. Groundwater recharges in aquifers.

    地下水重新含水
  2. Considering the shortcoming of thick epitaxial layer technology, author proposed a thin epitaxial layer ldmos used n - burry layer. through optimizing the n - burry layer ? length and impurity dose will increase the device ? breakdown voltage

    針對目前厚外延工藝的缺點,提出的薄外延ldmos採用n埋,通過優化n埋長度、劑量可提高器件耐壓。
  3. First, the soviet army halted the nazi advance outside moscow. then, over the next three years, not only did they hold the enemy in check but were able to drive it back, back into its own lair. the battles of moscow and stalingrad, the courage of besieged leningrad and the successes at kursk and on the dnieper decided the outcome of world war ii

    最近,卡西亞諾夫總理訪華並舉行中俄總理第八次定期會晤;兩國總理定期會晤委員會和中俄教文衛體合作委員會分別舉行第七次和第四次會議;兩國文化、教育、衛生等部門領導人陸續在北京召開會議,這些高交往將為中俄各領域合作新的活力。
  4. The chemical reaction happens when the solution of water soluble resin is filled into formation and generates water indissoluble material. the material will shut off the water channel

    將水溶性樹脂脂溶液到油中,溶液發生反應,生成不溶於水的物質,堵塞水流通道,從而達到堵水的目的。
  5. ( 5 ) glassy oxide film of samples processed by mevva al / piid si covered the surface of sic coating thickly and uniformly, and left few holes as a result of a good ability of sealing, which made weight loss of sic - c / sic smaller in air at1300

    ( 5 ) mevva源al再piid (等離子源全方位沉積) si塗,玻璃氧化厚而均勻,愈合性能好,孔洞少,對塗缺陷有最佳的改性效果。復合材料在1300空氣中的氧化失重顯著降低,甚至出現增重。
  6. Standard test method for acetone, p - chlorobenzotrifluoride, methyl acetate or t - butyl acetate content of solventborne and waterborne paints, coatings, resins, and raw materials by direct injection into a gas chromatograph

    通過直接一氣體色譜儀測定含溶劑和含水塗料塗樹脂和原材料中丙酮及甲基和丁基醋酸鹽含量的標準試驗方法
  7. Fabrication of ohmic contacts to 4h - sic created by ion - implantation

    離子注入層的歐姆接觸的制備
  8. During the high - voltage device design, the thick epitaxial layer ldmos which is compatible with current technology was researched. this device used piecewise vld and multiple region structure f reduce field layer. the using of the f reduce field layer effectively reduce the surface electric field of the device, shorten the length of its drift region, enlarge the choice of range of the ion implant dose of the p layer, and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge qss

    在高壓器件研究中對與現有工藝相兼容厚外延ldmos進行研究,該結構採用分段變摻雜多區p ~ -降場,有效降低器件的表面電場,縮短器件的漂移區長度,增大p ~ -降場劑量的選擇范圍,並有效地抑制界面電荷qss對器件耐壓的不利影響。
  9. By means of historical literature, the author analyzed the achievements made and insufficiencies existed in rural sports practice in china since the establishment of china, and put forward the following opinions based on his analysis : for the development of rural sports practice in china in the future, governmental functions should be intensified, and the mode of governmental functions should be institutionalized, standardized and legalized ; the construction of rural fundamental sports organizations should be strengthened, and rural fundamental sports activists should be cultivated ; local and national sports activity events should be fully explored, coordinated and promoted, so as to enrich rural sports activity contents ; rural sports activities should be properly developed according to the time, location, people and program, so as to add new contents to the celebration of traditional rural holidays ; attention should he paid to the issue of development of sports for disadvantageous groups and migrant laborers in rural society ; attention should also be paid to rural scholastic physical education and full utilization of rural scholastic physical education resources

    摘要通過歷史文獻,分析了建國以來中國農村體育實踐所取得的成就和不足,在此基礎上提出:未來中國農村體育的發展要強化政府的作用,政府的作用方式要制度化、規范化和法制化;要加強農村體育基組織建設,培育農村基體育骨幹;要充分挖掘、整理和推廣地方性、民族性的體育活動項目,豐富農村體育活動內容;要因時、因地、因人、因項目制宜地開展農村體育活動,為農村的傳統節日慶典新內容;重視農村社會弱勢群體和異地民工的體育發展問題;重視農村學校體育,充分利用農村學校體育資源。
  10. Right into 5 epidermallayers. for smooth, younthfully - fresh - looking skin ! gentle,

    特研活性成份60秒極速肌膚第五
  11. Geothermal power stations tap aquifers heated by contact with hot rocks in volcanic regions ? or, in hot but dry spots, they pump water past such rocks to heat it up

    地熱發電廠利用火山地區? ?或者地溫高且乾燥的地點? ?的乾熱巖體傳導熱能給含水畜熱,然後將水含水利用熱巖體對其加熱並使之汽化。
  12. The basic procedure of an interwell radiotracer test is, to inject a proper radioisotope tagged tracer material into the injector together with the injected fluid ; the tracer material will follow the injected fluid and go through the same path of injection fluid penetrating the formation ; finally the tracer material will be produced at the producer ; then, collecting samples at well head of producer, tracer response can be observed ; by analyzing the response of tracer, the information on dynamics of injection fluid and reservoir geology can be obtained

    放射性井間示蹤測試的基本過程是:將一定量合適的放射性示蹤劑介流體,使其通過井進並跟隨流體穿越地,最後被採油井采出;通過跟蹤監測示蹤劑在採油井上的響應,獲得水井-採油井之間流體和地的信息。
  13. With increasing implantation dose, the thickness of the box layer increases while that of the si over - layer decreases. the thickness of the si over - layer is dependent of the ion energy

    通過調節能量可獲得所需要的不同表硅厚度的soi結構材料,但為獲得高質量的soi材料,能量需要和劑量有合適的匹配。
  14. The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

    本論文還系統地研究了不同劑量、能量、時基底溫度以及退火溫度對所形成soi結構性能的影響,藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段,我們發現,與傳統氧隔離( simox )技術類似,存在著「劑量窗口」形成優質的soi材料,但在水等離子體離子方式中soi材料結構質量對劑量變化更為敏感,隨著劑量的增大, soi材料的埋厚度增大而表硅厚度減小。
  15. In the current experimental parameter range, thin and / or ultra - thin soi with thickness of 50 - 150nm and box of 70 - 180nm thick were obtained. compared to the conventional simox - soi, the soi materials manufactured by water plasma ion implantation at the same implantation dosage and ion energy have much thicker box layers

    本論文一個重要發現是以水等離子體離子方式所形成埋sio _ 2厚度得到了大幅度的展寬,相比傳統simox法,其展寬幅度高達50 ,這一重要發現為降低時間和soi制備成本提供了有效的途徑。
  16. Returning what should notice is, life - insurance product is varied, the person that fits different income administrative levels is bought

    還應該重的是,人壽保險的產品是多種多樣的,適合不同收次的人購買。
  17. Lif acting as the electron inject layer can increase the luminous efficiency and decrease the operating voltage ; cupc acting as the hole inject layer can improve the device ' s stability, but at the same time, it will cause the reduction of brightness and efficiency

    Lif作為電子注入層,能夠明顯提高器件的發光效率,降低器件的工作電壓; cupc作為空穴注入層能夠使器件穩定性提高,但也導致了亮度和效率的下降。
  18. This paper has five chapters : the first chapter : describing the evolution of the organic / polymeric electroluminescent device, analyzing its advantages and disadvantages when acting as flat display, introducing the oled structure, luminous mechanics and the methods of increasing the luminous efficiency, etc. the second chapter : discussing the effects on the performance of oled if the lif acts as an electron inject layer and / or cupc acts as a hole inject layer

    本文共分五章:第一章:詳細敘述了有機聚合物電致發光器件的研究進展,分析了其作為平板顯示的優缺點,介紹了oled結構、發光原理和提高其效率的途徑等。第二章:討論了lif作為電子注入層, cupc作為空穴注入層對器件性能的影響。
  19. When a mutually doped transitional layer is introduced, no matter it is added to the interspace of electron transport layer and hole transport layer or to the interspace of the hole transport layer and hole inject layer, it can reduce the defects of the interface and result in the increase of brightness and the decrease of the operating voltage obviously

    我們在器件中引了互摻過渡結構,發現不管在電子傳輸和空穴傳輸之間,還是在空穴傳輸和空穴注入層之間採用這樣的摻雜結構,都能夠有效減少有機間的界面缺陷態,明顯提高了器件的亮度,降低了器件的工作電壓。
  20. In this paper, we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time. studied the different annealing condition dependence of the samples " structure, electrical and magnetic properties and the relation of the mn + forms and these properties

    本課題採用離子的方法將不同劑量的mn ~ +到非摻雜半絕緣( 100 ) gaas單晶襯底中,然後進行不同溫度和時間的快速熱退火處理,研究了不同的退火條件對樣品注入層的晶體結構、電特性和磁特性的影響以及mn ~ +在樣品中的存在狀態與這些性質之間的關系。
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