注入摻雜 的英文怎麼說

中文拼音 [zhùrùchānzá]
注入摻雜 英文
injection doping
  • 注 : Ⅰ動詞1 （灌入） pour; irrigate 2 （集中） concentrate on; fix on; focus on 3 （用文字來解釋字句）...
  • 入 : Ⅰ動詞1 （進來或進去） enter 2 （參加） join; be admitted into; become a member of 3 （合乎） conf...
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 注入 : pour into; empty into; inpouring; injection; infusion [拉丁語]; infunde [法國]; abouchement; influxion
  • 摻雜 : 1. mix; mingle2. doping; inclusion; addition; adulteration
  1. Some gas - sensitive test to deoxidizing gas have carried out based on tio _ 2 films by sputtering and doped some impurity. the experimental results showed that tio _ 2 films have different electron injecting principle and reactive mechanism, the behaviors of gas - sensor for hydrogen and ethanol manifest dissimilitude. this is due to that the oxygen vacancies were compensated by the impurity

    用濺射制備的薄膜摻入部分雜質對還原性氣體進行氣敏測試，發現tio _ 2薄膜對酒精氣體和氫氣有不同的反應機制和電子注入機理，氣敏特性也表現出不同，而雜質的引入反而降低了tio _ 2薄膜的敏感性，可能是由於雜質對氧空位的補償所引起。
  2. Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance

    討論了不同er離子注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響，並具體給出了摻雜cdte多晶薄膜的電導、載流子濃度及遷移率等參數值。
  3. During the high - voltage device design, the thick epitaxial layer ldmos which is compatible with current technology was researched. this device used piecewise vld and multiple region structure f reduce field layer. the using of the f reduce field layer effectively reduce the surface electric field of the device, shorten the length of its drift region, enlarge the choice of range of the ion implant dose of the p layer, and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge qss

    在高壓器件研究中對與現有工藝相兼容厚外延ldmos進行研究，該結構採用分段變摻雜多區p ~ -降場層，有效降低器件的表面電場，縮短器件的漂移區長度，增大p ~ -降場層注入劑量的選擇范圍，並有效地抑制界面電荷qss對器件耐壓的不利影響。
  4. Since polymer light - emitting diodes ( pleds ) were invented, much efforts have been made to improve the brightness and efficiency of its electroluminescence for realizing pled commercial application. we investigated several factors influencing the brightness, efficiency and spectrum characteristics of pleds el, especially focused our attention on the processes of carrier injection, transport, recombination and annihilation factors influencing brightness efficiency of organic electroluminescence ( oel ) in doped single and double - layer pleds

    本文以提高聚合物器件的效率和亮度為目標，提出了提高及b幾種方案，研究了材料性質，器件結構，它們的穩態及瞬態特性及發光機理，特別關注了以兼具電子空穴傳輸能力的分子及摻雜聚合物作成的單雙層摻雜聚合物發光器件中的載流子注入、遷移、復合及湮滅等。
  5. The aim of the thesis was that the pure cdte thin films were adulterated by the influx technique with different metals, and then we have investigated its configuration and photoelectricity after the anneal treatment

    目前，用離子注入的方法在cdte薄膜中摻雜的文獻報道的很少。本工作目的就是採用離子束注入的方法對純cdte薄膜進行不同金屬元素的摻雜及熱處理，研究其結構和光電特性。
  6. The afm scans has shown that the sample ' s external configuration has not been defaced. the uv - vis instrument test has shown that the absorb spectrum has been move 12nm - 18nm to the infrared. with different power and implanting time, the feasible conditions are under the four hundred watt and sixty minutes

    研究表明，注入時間和注入功率對納米tio _ 2的光吸收有較大影響，氮的注入量存在一個最佳濃度值，摻雜劑濃度太高或太低，均不利於提高納米tio _ 2的光吸收。
  7. The band was previously associated with f - type color centers and v - type color centers, as analyzed in x - ray irradiated ysz sample. however, the absorption band observed in our experiments has a shift towards the longer wavelength ( red shift ) as comparing with that in the x - ray or neutron irradiated ysz spectra. this shift may mainly due to large local distortions near the f - type centers and the v - type centers and the presence of multiple color centers

    本文通過光吸收、光熒光、 tem 、 xps測試及trim96計算分別研究了不同注量xe ~ +注入ysz前後光學性能和缺陷形態變化，以及ni ~ +注入對不同摻雜單晶al _ 2o _ 3結構和光學性能的影響，得到以下結果： （ 1 ） ysz注量達到10 ~ （ 16 ） cm ~ （ - 2 ）時，開始出現由f型和v型色心重疊而產生的吸收帶，與x射線、中子輻照相比，重離子輻照產生了更為復雜的缺陷復合體而導致吸收峰紅移。
  8. Moreover, we observed the concentration profiles of the ion - implanted samples and the diffused samples by c - v method, and discovered that the carrier concentration decreased with increasing of the diffusion depth. whereas, the peak concentration of the ion - implanted samples located at 0. 248151 u m beneath the surface and the peak concentration of the diffused samples located at the surface. furthermore, the carrier concentration of mnas source diffused sample as high as 102 % m3can be obtained, and the surface was much smoother compared with that of the pure mn source diffused sample

    發現兩種摻雜方法的載流子濃度大體上都是隨著擴散深度的增加而下降，不同的是離子注入樣品的載流子最高濃度處于離表面深度0 . 248151 m處，而擴散樣品的載流子最高濃度處于表面，並摻錳（ mn ）砷化鋅（ gaas ）材料性質的研究且還發現相對于純mn源擴散樣品來說， mnas源擴散樣品的表面較為光滑，且表面載流子濃度高達1020 cm 』數量級。
  9. The model of threshold voltage solves the problems of nonuniformly doped channel, short channel effect, implantation for adjusting threshold voltage, edge capacitance of gate, etc. not only the model can be used in ldmos, but it can perfectly describe the short channel effect of threshold voltage for all other mos devices

    其中，閾值電壓模型解決了溝道非均勻摻雜、短溝道效應，調閾值注入，柵邊緣電容等問題。該模型不僅適用於ldmos ，也可以很好地描述所有的mos器件閾值電壓的短溝道效應，嚴格證明了短溝道效應會引起閾值電壓的減小。
  10. Experimental results revealed that the carrier mobility increased with increasing of the annealing temperature, in the range of the annealing temperature from 650 ? to 850 ?, which implied that the crystal lattice structure was damaged by ion implantation and restored after annealing. furthermore, the square carrier concentration decreased, and the square resistance of the samples implanted by mn + and c increased with the raising of annealing temperature. these results indicated that the second phase such as mnga, mnas ferromagnets was formed by more mn + ions with increasing of the ( gaas ) annealing temperature, so the mn + ions which can provide carriers decreased

    由實驗結果可以知道在退火溫度為650 850范圍內，樣品的載流子遷移率隨著退火溫度的提高呈上升趨勢，說明雜質元素的注入對樣品造成晶格損傷，但退火對這些損傷具有修復作用；此外，隨著退火溫度的上升，樣品的方塊載流子濃度不斷下降，加c樣品的方塊電阻不斷上升，這都是因為隨著退火溫度的提高，摻入的mn ~ +離子不再提供載流子，而是形成了mnga 、 mnas等磁性第二相。
  11. The separated phase of blends and carrier injection, transport and decay were firstly investigated by monitoring two different transient el peaks

    首次引入監測基質和雜質兩個瞬態電致峰值來研究低摻雜體系的相分離及載流子注入、遷移和湮滅過程。
  12. Mg ions were implanted on mg - doped gan grown by metalorganic chemical vapor deposition. the p - type gan was achieved with high hole concentration 8. 2810

    應用mg離子注入mocvd法生長摻雜mg的gan中，在經過800 ， 1h的退火后，獲得高空穴載流子濃度8 . 2810
  13. Conformed by van der pauw hall measurement after annealing at 800 for 1h. this is the first experimental report of mg implantation on mg - doped gan and achieving p - type gan with high surface hole concentration

    的p -型gan 。首次報道了實驗上通過mg離子注入到mg生長摻雜的gan中並獲得高的表面空穴載流子濃度。
  14. When a mutually doped transitional layer is introduced, no matter it is added to the interspace of electron transport layer and hole transport layer or to the interspace of the hole transport layer and hole inject layer, it can reduce the defects of the interface and result in the increase of brightness and the decrease of the operating voltage obviously

    我們在器件中引入了互摻過渡層結構，發現不管在電子傳輸層和空穴傳輸層之間，還是在空穴傳輸層和空穴注入層之間採用這樣的摻雜結構，都能夠有效減少有機層間的界面缺陷態，明顯提高了器件的亮度，降低了器件的工作電壓。
  15. In this paper, we used different doping means to prepare the mn - doped gaas material. firstly, we incorporated mn of different dose into gaas by ion implantation, including the couple - ion implantation with mn + and c, then performed rapid thermal annealing in different temperature. furthermore, we incorporated mn into gaas using different mn sources ( pure mn and mnas ) by diffusion

    本論文利用不同摻雜方法進行了摻mngaas這種dms材料樣品的制備，首先利用離子注入法對砷化鎵（ gaas ）材料進行不同劑量的錳（ mn ~ + ）離子注入，其中包括加碳（ c ）的雙離子注入，然後在不同溫度下進行快速退火處理；此外還利用擴散法對gaas晶片進行不同mn擴散源（純mn 、及mnas ）的摻雜。
  16. In this paper, we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time. studied the different annealing condition dependence of the samples " structure, electrical and magnetic properties and the relation of the mn + forms and these properties

    本課題採用離子注入的方法將不同劑量的mn ~ +注入到非摻雜半絕緣（ 100 ） gaas單晶襯底中，然後進行不同溫度和時間的快速熱退火處理，研究了不同的退火條件對樣品注入層的晶體結構、電特性和磁特性的影響以及mn ~ +在樣品中的存在狀態與這些性質之間的關系。
  17. Doping - the process of the donation of an electron or hole to the conduction process by a dopant

    摻雜-把攙雜劑摻入半導體，通常通過擴散或離子注入工藝實現。
  18. We have investigated the influence on the character of cdte thin films with different conditions and parameters. secondly, in normal temperature, cdte thin films are high resistance semiconductor, for improving its electricity capability, we commonly inject benefactor or acceptor impurities into the pure cdte thin films, the ion influx technique is a good method among many adulteration means. at present, the literatures on the doped cdte thin films by the ion influx technique have a fat lot reports

    本論文首先採用近距離升華法在不同基片上制備cdte薄膜，研究了不同工藝條件和參數對cdte薄膜性質的影響。其次，在常溫下，本徵cdte薄膜均為高阻半導體。為了改善其導電性能，通常向cdte薄膜中摻入施主或受主雜質，其中離子注入技術是摻雜方法之一。
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