注入等離子體 的英文怎麼說

中文拼音 [zhùrùděnglízitǐ]
注入等離子體 英文
injected plasma
  • 注 : Ⅰ動詞1 （灌入） pour; irrigate 2 （集中） concentrate on; fix on; focus on 3 （用文字來解釋字句）...
  • 入 : Ⅰ動詞1 （進來或進去） enter 2 （參加） join; be admitted into; become a member of 3 （合乎） conf...
  • 等 : Ⅰ量詞1 （等級） class; grade; rank 2 （種; 類） kind; sort; type Ⅱ形容詞（程度或數量上相同） equa...
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 體 : 體構詞成分。
  • 注入 : pour into; empty into; inpouring; injection; infusion [拉丁語]; infunde [法國]; abouchement; influxion
  • 離子 : [物理學] ion
  1. Plasma immersion ion implantation into insulating materials

    等離子體浸沒離子注入絕緣材料的研究
  2. In this investigation, gas barrier property of pet has been improved by plasma enhanced chemical vapor deposition ( pecvd ) and plasma immersion ion implantation ( piii ) technologies

    本文通過等離子體化學氣相沉積（ pecvd ）和等離體浸沒離子注入（ piii ）技術在聚酯材料表面制備了阻隔碳膜來提高氣體阻隔性能。
  3. Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance

    討論了不同er離子注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響，並具體給出了摻雜cdte多晶薄膜的電導、載流子濃度及遷移率等參數值。
  4. Low - energy ion implantation has been considered as a new kind of mutation breeding and foreign gene delivery techniques. by the means of implanting low - energy ions into organisms, the biological effects and the function mechanisms of the technique were investigated by some researchers

    離子束生物技術是一種新型的生物誘變技術，它是通過將低能離子束注入生物體內，來研究其生物學效應和作用機理，並將它應用於遺傳育種和基因工程等方面的一種綜合技術。
  5. The questions the researcher concerned are which system will be chosen and how to obtain the good lithium ionic conductor materials, which is the basic departure of the paper. the addition of second phase in composite can change the interface structure and the conduction mechanism, improve the matrix conductivity and other function such as the sintering, crisping and so on, so the research of composites are an interesting field of the ionic conductors. the synthesis of lithium ionic conductor is often by solid state reaction, but this method needs high temperature and leads to the volatility of lithium which not only causes the drift of the compounds but gets the no well - distributed materials

    研究者所關注的問題是選擇新的體系進行研究，以期得到性能更好的鋰離子導體材料，這也正是本論文的基本出發點；復合離子導體中第二相的加入改善了基質的界面結構和導電機制，不僅可以提高基質材料的電導率，還可以在一定程度上改善材料的其它性能，如燒結性能、脆性和機械強度等。因此復合材料的研究是離子導體一個有廣闊前景的發展方向；合成鋰離子導體，特別是成分復雜的體系以傳統的固相合成法為主，但這種方法需要較高的溫度，容易引起鋰的揮發，從而造成產物組成的偏移，而且不易得到顯微結構均勻的材料。
  6. The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

    本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。
  7. In the current experimental parameter range, thin and / or ultra - thin soi with thickness of 50 - 150nm and box of 70 - 180nm thick were obtained. compared to the conventional simox - soi, the soi materials manufactured by water plasma ion implantation at the same implantation dosage and ion energy have much thicker box layers

    本論文一個重要發現是以水等離子體離子注入方式所形成埋層sio _ 2厚度得到了大幅度的展寬，相比傳統simox法，其展寬幅度高達50 ，這一重要發現為降低注入時間和soi制備成本提供了有效的途徑。
  8. Improving on the rolling contact fatigue life and mechanical behaviors of bearing steel by nitrogen plasma immersion ion implantation

    氮等離子體浸沒離子注入技術改善軸承鋼滾動接觸疲勞壽命和機械性能的研究
  9. In the present work, water plasma ion implantation, instead of the conventional oxygen plasma ion implantation, has been employed to fabricate soi materials. the masses of the three dominant ion species in the water vapor plasma, h2o +, ho +, and o +, are very close to each other, which overcome the problem of co - existence of o and 02 in oxygen plasma source. the oxygen depth profiles in the water plasma ion as - implanted silicon do not disperse much, which makes it possible for the formation of single buried oxide ( box ) layer by choosing appropriate implantation energy and dose

    本論文創造性地採用水等離子體離子注入方式代替傳統的氧離子注入方式來制備soi結構材料，由於水等離子體中的三種離子h _ 2o ~ + 、 ho ~ +和o ~ +質量數相差很小，克服了氧等離子體中因o _ 2 ~ +和o ~ +質量數相差大而引起的氧在硅中的分佈彌散，使注入硅后的氧射程分佈相對集中，比較容易退火后形成soi結構材料。
  10. ( ii ) charging effects on temporal and spatial evolution of dusty plasma sheath in plasma source ion implantation. the temporal and spatial evolution of a dusty plasma sheath in plasma source ion implantation has been investigated with a fluid theory and a self - consistent dust - charging model. a negative potential pulse is introduced to form the plasma sheath

    （ ）塵埃粒子的充電效應對等離子體源離子注入（ ps ）鞘層時空演化的影響採用流體模型及自洽的塵埃粒子充電模型，我們研究了等離子體源離子注入時的塵埃等離子體鞘層的時空演化。
  11. Plasma immersion ion implantation ( phi ) seems to be an alternative approach to reduce the manufacture cost of soi wafers due to its large ion current and independence of implantation time to the wafer size

    等離子體離子注入（ p ）技術由於其強束流和大面積注入方式而有希望在soi材料制備方面獲得突破。
  12. This paper introduces the neutral beam injection equipment that was the national chiefly supported project in 95 duration and mainly introduces the design and research of its computer monitoring and control system

    本文介紹了中國科學院等離子體物理研究所國家九五重點支持項目ht - 7中性束注入裝置監控系統的設計和研製。
  13. An ion implanter without ion mass analyzer was applied to simulate the phi procedure to fabricate soi materials by implantation of water plasma ions. thin soi structure was successfully fabricated by the implanter using 50 ~ 90kev water plasma ion implantation with the dose ranging from 2 - 6. 5 + 017cm - 2 and, subsequently, the high temperature annealing

    我們使用無質量分析器的離子注入機，模擬等離子體離子注入過程，成功地在該注入機上用水等離子體離子注入制備出了界面陡峭、平整，表層硅單晶質量好，埋層厚度均勻的薄型soi材料。
  14. The research result shows that doped time and power has great effect on the 1 optical absorption of tio2

    本文對用ecr等離子體注入氮改性納米tio _ 2的光吸收進行了廣泛深入的研究。
  15. ( 3 ) dlc films were prepared by combining psii method with pecvd method, the films got not only smooth surface morphology but also strong adhesion, in such a fashion that it was the best method

    （ 3 ）通過全方位離子注入和等離子體增強化學氣相沉積相結合，發現制備出的類金剛石薄膜既改善了表面形貌又增強了結合力，因此證明了這是一種較好的制備方法。
  16. Carbon plasma immersion ion implantation ( piii ) into the porous silicon has been studied for the first time, and obtained intense blue light. the effect of annealing temperature on the luminescence has been investigated and results show that the luminescence intensity of sample reaches maximum after annealed at 4000c

    首次研究了碳等離子體注入對多孔硅的改性，得到了強藍光發射，詳細研究了退火溫度對發光強度的影響，發現在400時達到最大值，並探討了相關的機理。
  17. This paper has discussed preparing diamond - like carbon films by means of micro - wave ecr plasma source ion implantation and plasma enhanced chemical vapour deposition. we use the raman spectrum, ft - ir, afm and so on to study the dlc film. the result indicates : different bias voltage, frequency and gas flow rate of psii will have impact on sp3 proportion of dlc films, we find high bias voltage, low frequency and moderate gas flow rate can prepare high sp3 proportion dlc films ; we simply illustrate the influence of bias voltage on sp3 proportion of dlc films in pecvd

    研究結果表明：在全方位離子注入技術中，不同的偏壓、頻率、氣體流量都對薄膜中sp ~ 3鍵比例有所影響，文中對具體的影響進行了分析，發現偏壓的增加、頻率的降低和適中的氣體流量可以制備出sp ~ 3鍵比例高的類金剛石膜；在等離子增強化學氣相沉積技術中，對偏壓對sp ~ 3鍵比例的影響也進行了簡單分析。
  18. The theoretical analysis of large cryocondensation pump for nbi was mainly concerned. this paper emphasized on analyzing and calculating the heat load of cryocondensation pump, simulating thermal transmission coefficient and molecule transmission coefficient of radiation baffle according to monte carlo method, analyzing the process on cryo - surface and the factor of affecting pumping speed and hydrogen layer thickness of influencing cryo - parameter, etc. finally by verifying the pumping speed on large cryocondensation pump for neutral beam injection system, the pumping speed of 4. 0x105l / s ( for h2 ) was proven to be reasonable

    本文首先介紹了中性束注入系統的國內外發展狀況，闡述了中科院等離子體所ht - 7中性束注入系統的構成，主要對用於中性束注入系統的大型低溫冷凝泵的特性進行了理論分析；對冷凝抽氣面的熱負載進行了分析計算；用蒙特卡羅法對輻射擋板的分子傳輸幾率與熱傳輸幾率進行了模擬計算；研究了低溫表面的處理方法對抽速的影響以及氫層厚度對各低溫參數的影響；最後對用於中性束注入系統的大型低溫冷凝泵的抽速進行了驗證，得出的結論是：選取40萬升秒的抽速是合理的。
  19. The fundament of nbi system used on the ht - 7 device of asipp and its requirement for vacuum is introduced in the thesis

    本文介紹了中國科學院等離子體物理研究所ht - 7中性束注入系統的工作原理和它對真空系統的要求。
  20. The charactesistics of two - dimension spectra obtained by inductively coupled plasma atomic emission spectrometry ( icpaes ) with charge injection detection ( cid ) in frequency domain were studied in the present paper

    摘要本文對電感耦合等離子體原子發射光譜分析（ icp - aes ）中電荷注入檢測器（ cid ）得到的二維光譜的頻率特性作了研究。
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