活性發射材料 的英文怎麼說

中文拼音 [huóxìngfāshècáiliào]
活性發射材料 英文
active emitting material
  • 活 : Ⅰ動詞1 （生存; 有生命） live 2 [書面語]（救活） save （the life of a person）:活人無算 （of a goo...
  • 性 : Ⅰ名詞1 （性格） nature; character; disposition 2 （性能; 性質） property; quality 3 （性別） sex ...
  • 發 : 名詞（頭發） hair
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 材 : 名詞1 （木料） timber 2 （泛指可以直接製成成品的東西; 材料） material 3 （供寫作或參考的資料） ma...
  • 料 : 名詞1 （材料; 原料） material; stuff 2 （喂牲口用的穀物） feed; fodder 3 （料器） glassware 4 （...
  • 活性 : [化學] activity; active; activated活性肥料 active fertilizer; 活性酵母 active dry yeast; 活性粘土...
  • 材料 : 1. （原料） material 2. （資料） data; material 3. （適于做某種事的人才） makings; stuff
  1. In this paper, radiation curing and photo curing are compared. the fundamental process of electron beam ( eb ) curing is elaborated, and the features of eb cured composites are discussed. furthermore, the development of eb cured composites technology is summarized, which includes the selection of the resins suitable for eb curing, photoinitiators, active diluents and the curing mechanism. finally, a kind of low - energy eb curing technology is introduced and some innovative resins are exploited

    對輻射固化與光固化進行了比較，闡述了電子束輻射固化的基本過程，並對電子束固化復合材料的技術特點進行了概述.此外，還詳細總結了電子束固化復合材料技術的發展狀況，包括可電子束固化的樹脂體系，輻敏劑以及活性稀釋劑的選擇和應用，固化機理的研究.最後，還對復合材料的低能電子束固化技術以及新型樹脂體系的探索進行了總結
  2. This research has studied the microstructure of cathode materials systematically by the means of high resolution transmission electron microscopy and scanning electron microscopy, surveyed the electron emission performance of la2o3, - mo, la2o3 - y2o3 - mo, la2o3 - sc2c > 3 - mo cathode with the self - designed electron emission surveyor and analyzed the elements changing of the surface of mo - la2o3 - sc2c > 3 cathode in - situ. while it was heated to different temperature. at last, the relationship of the microstructure of cathode, diffusion of active matter and electron emission performances has been discussed

    本研究採用高分辨掃描電鏡、透射電鏡對稀土鉬鎢陰極材料的顯微結構進行了系統研究；利用本課題研究組設計研製的電子發射測量儀對la2o3 - mo ， la2o3 - sc2o3 - mo ， la2o3 ? y2o3 - mo三種陰極（以下稱鑭?鉬陰極、鑭鈧?鉬陰極、鑭釔?鉬陰極）的發射性能進行了測量；利用經改造后的俄歇電子能譜儀「原位」分析了發射性能較好的鑭鈧鉬陰極在不同溫度下表面活性元素的變化情況。
  3. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  4. At present, the material of emitting cathode is mostly present with big escaping powers low reliability 1ow uniformity and emission capability

    摘要目前，陰極發射體材料多存在逸出功大，可靠性及均勻性低，發射性能低、不能自動調節活性物質更替的速度等方面的問題。
  5. According to experiments, lab6, with high conductivity, good heat stability and chemical stability, low work function, and active cathode appearance, has become an ideal material for field emission array cathodes

    經試驗證明，六硼化鑭（ lab6 ）具有高導電率和良好的熱穩定性、化學穩定性、低功函數以及活性陰極表面，因此從理論上成為了場發射陰極的理想材料。
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