淀積率 的英文怎麼說

中文拼音 [diànjīlǜ]
淀積率 英文
deposition rate
  • 淀 : Ⅰ動詞（沉澱） form sediment; settle; precipitateⅡ名詞（淺的湖泊, 多用於地名） shallow lake
  • 積 : Ⅰ動詞（積累） amass; store up; accumulate Ⅱ形容詞（長時間積累下來的） long standing; long pending...
  • 率 : 率名詞（比值） rate; ratio; proportion
  1. With higher frequency of radar using and widening of radar using area, caused by increasing construction of doppler weather radar network, it certainly will lead to explosive accumulation of radar data

    我國多普勒天氣雷達網建設速度的不斷加快，雷達使用頻率的不斷提高和使用范圍的不斷擴大，勢必導致雷達基數據爆發性的淀積。
  2. Abstract : based on the concept of space migration length of photo - activation species, the analytical expression of the total number n of photo - activation species that can reach a segment on the substrate in the cubic deposition reaction space is derived. the simulation of the relationship of deposition rate and position of substrate is also completed. the simulation result agrees with the experiment data well

    文摘:基於光激活物質空間遷移長度的概念，推導出方形反應空間中到達基片上單位面積的光激活物質總數的解析表達式，對光化學汽相沉積中淀積速率和基片位置的關系進行了模擬和分析.模擬結果同實驗結果符合良好
  3. Various factors affecting the refractive index and the deposition rate of the deposited films are studied to optimize growth conditions of the films. the microstructures and optical properties of the films are characterized by a prism coupler, a fourier transform infrared spectroscopy ( ftir ) and an atom force microscopy ( afm )

    研究了薄膜折射率和淀積速率與工藝參數之間的關系，通過棱鏡耦合儀、傅立葉變換紅外光譜、原子力顯微鏡、掃描電子顯微鏡等測試手段，分析了薄膜的結構和光學特性。
  4. In this paper, plasma - enhanced chemical vapor deposition ( pecvd ) technique was used to deposit the dielectric p - sio2 films and p - sion films on the silicon wafer under the conditions of low temperature and low pressure with teos organic sourse. this research was focused on the evaluation of film growth, hardness, stress, resistance and refractive index, by changing the experimental parameters including rf power, substrate temperature, chamber pressure, and the flow rates of teos, o2, n2. the results showed that the p - sio2 film was smooth, dense, and structurally amorphous

    實驗結果顯示，用pecvd法淀積的p - sio _ 2膜是一表面平坦且緻密的非晶質結構的薄膜，與矽片襯底之間有良好的附著性；在中心條件時生長速率可控制在2600a / min左右；在基板溫度410時有最大的硬度可達16gpa ；其應力為壓縮應力，可達- 75mpa ；薄膜的臨界荷重為46 . 5un 。
  5. Book publication industry plays an important role in accumulating chinais national heritage and passing on china ' s culture, but in recent ysare, there were some problems in this industry such as high rate of book returns and overstock of books

    摘要我國出版業承擔著一個民族積淀、傳承文化的重要職責，但近幾年來圖書出版業卻呈現出高退貨率、高庫存積壓等問題。
  6. The experiments indicate that the deposition rate will increase with the increase of the flow ratio of sihu / nhs, slightly decrease with the increase of substrate temperate, and increase obviously with the increase of rf power

    氮化硅薄膜的折射率隨硅烷氨氣流量比增大而增大，隨溫度升高而略有增加，隨淀積功率增大而略為降低。
  7. By the pecvd ( plasma enhanced chemical vapor deposition ) system and the reactants of silane and ammonia, silicon nitride thin film with excellent anti - reflective and passivation effects was prepared. the relatively optimum parameters for depositing sinx thin film and the basic physical and chemical properties of sinx were investigated. the effects of substrate temperature, the flow ratio of silane over ammonia and the rf power on the refractivity and deposition rate were researched

    實驗表明，氮化硅薄膜的沉積速率隨硅烷氨氣流量比增大而增大，隨溫度升高而略有降低，隨淀積功率增大而明顯增加；在襯底溫度300 ，射頻功率20w和硅烷氨氣流量比為1 ： 3的條件下氮化硅薄膜的沉積速率大約為8 . 6納米分。
  8. In succession, tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering, and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber. in addition, the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ), and the ti content in the film is approximately 51at %

    按照改進的工藝參數，在單晶硅襯底上濺射-淀積了tini薄膜，並進行了超高真空退火， dsc法測得其馬氏體逆相變峰值溫度為72 ，利用能譜分析（ eds ）技術測得其ti含量約為51at ，通過對非晶tini薄膜與單晶硅襯底之間的界面進行eds及x射線衍射（ xrd ）分析，發現在用大功率（ 2000w ）直流磁控濺射法制備tini薄膜過程中，存在ti 、 ni與si的雙向擴散，發生了界面反應，並有三元化合物ni _ 3ti _ 2si生成。
  9. ( 1 ) two edt monomer synthetic paths have been investigated. ( 2 ) using the method of depositing the pedt film on the glass base, the affect of processing and environmental conditions - - such as the polymerizing temperature, the state of the polymer material, the polymerization correctives, the drying temperature, and the amount of the solution etc. - - to the pedt material ' s electroconductivity has also been examined in this paper

    主要研究內容包括： （ 1 ） edt單體合成路線的兩種方案，以及具體的制備過程； （ 2 ）在玻璃基片上淀積pedt膜層，研究了聚合溫度、聚合物狀態、聚合改良劑、烘乾溫度、溶劑含量等工藝及環境條件對pedt材料電導率和成膜速度的影響。
  10. Because of aggravation of market competition, self development, reckoning invest return rate gotten ahead, effort in cross sales, as well as client subdivide, strengthening relationship to important client, these need utilize accumulated data to proceed analyses for client and breed

    再有就是由於市場競爭的加劇，企業從自身的發展出發，要求在投資回報率上進行測算、交叉營銷上進行努力、以及對客戶進行細分、加強與重要客戶的溝通等等，這些都需要利用企業已積淀下來的數據對客戶和品種進行分析。
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