溝道電流 的英文怎麼說

中文拼音 [gōudàodiànliú]
溝道電流 英文
channel current
  • 溝 : 名詞1 （挖掘的水道或工事） channel; ditch; gutter; trench 2 （淺槽;似溝的窪處） groove; rut; furr...
  • 道 : Ⅰ名詞（道路） road; way; route; path 2 （水流通過的途徑） channel; course 3 （方向; 方法; 道理） ...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高
  2. Hot electron tunneling mechanism of current collapse in gan hfet

    溝道熱電子隧穿電流崩塌模型
  3. A mixture of three amino acids ( arg, gly, glu ) labeled with fluorescein isothiocyanate ( fitc ) was separated in pdms microfluidic chip, the separation voltage is 200v / cm, the separation time is less than 120 seconds ; according to ccd fluorescence images, two distinct physical processes - stacking and destacking during sample injection were studied qualitatively ; rhodamine b, a kind of temperature - dependent fluorescence dye, was used as probe to develop a temperature - fluorescence intensity equation, then temperature - color map in microchannels was constructed, and temperature trait in microchannels on the pdms microfluidic chip was analysed. according to the results, we conclude that the electric field applied to the pdms microfluidic chip should not exceed 400v / cm

    利用pdms微流控晶元對fitc標記的精氨酸、甘氨酸、谷氨酸混合物進行了電泳分離，分離電壓為200v cm ，分離時間不到120秒；通過拍到的熒光顯微圖像對電泳注樣過程中復雜的樣品分子積聚與解聚現象作定性的分析；以熒光染料rhodamineb為溫度熒光探針，建立了pdms微流控晶元上的溫度-熒光強度的關系公式，並利用matlab圖像處理工具箱構建出微流體溝道內的溫度色圖，對pdms微流控晶元的微流道溫度特性進行了分析，根據實驗結果，我們認為對于pdms微流控晶元來說，在進行需要外加電場作用的試驗時，外加電場不應超過400v cm 。
  4. Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density

    基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大
  5. As a result, the fermi level at the surface will shift towards the valence band maximum ( vbm ). accordingly the band bending increases, and the surface depletion layer thickness enhances, therefore, the channel thickness reduces. this is the main factor resulting in the decrease of saturated drain - source current

    表面費米能級向價帶頂移動，能帶彎曲加劇，肖特基勢壘高度增加，表面耗盡層變厚，導電溝道變窄，是導致源漏飽和電流下降的主要因素。
  6. In order to investigate the effect of high - field hot - carrier on devices and circuits, the electrical stress experiment is carried out with 1. 2 n m, 1. 0 n m and 0. 8 u m channel length home - made mosfet ' s by the monitor system with ate and cat technology. by using the fresh and degraded experiment data, bsim2 model parameters are extracted

    為了分析研究高場熱載流子效應對器件和電路特性可靠性的影響，採用自動測試與cad技術相結合的監測系統，對國內溝道長度1 . 2 m 、 1 . 0 m和0 . 8 m的mosfet進行了電應力退化實驗，並根據實驗結果提取了退化前後器件的bsim2模型參數。
  7. Under high drain voltage condition, the results proved that channel electrons are easily ejected into gan buffer layer and be trapped to induce current collapse

    在大漏極電壓條件下，溝道電子易於注入到gan緩沖層中，並被緩沖層中的陷阱所俘獲，耗盡二維電子氣，從而導致電流崩塌效應。
  8. We discussed the influence of channel - length modulation effect and dibl effect to temperature behavior of source - drain current, gave a expressions for studying the temperature characteristic of source - drain current, and deduced a ztc point expression

    研究了溝長調制效應和漏致勢壘降低效應對漏源電流溫度特性的影響，給出了一個用於研究漏源電流溫度特性的電流公式；並推導了短溝道most的ztc點公式。
  9. This paper also presented the structure of soi bjmosfet and discussed and analyzed the advantages of this device by comparing with the bulk bjmosfet. its advantages are as fellow : no latch - up effect, better capability of resisting invalidation, much smaller parasitic capacitance, weaker hot - carrier effect and short - channel effects, and simpler technics, and so on

    通過與體硅bjmosfet比較，討論和分析了soibjmosfet的優點：無閂鎖效應、抗軟失效能力強、寄生電容大大降低、熱載流子效應減弱、減弱了短溝道效應、工藝簡單等。
  10. The optical effect on the uniformity of mesfet threshold voltage is studied. results show that optical radiation enhances the drain - source current of the gaas mesfet, and makes the threshold voltage to move toward negative direction. optical radiation enhances the uniformity of mesfet threshold voltage

    本文研究了光照對閾值電壓均勻性的影響，觀察到在光照條件下，耗盡型mesfet的溝道電流增加，閾值電壓向負方向增加，光照提高了閾值電壓的均勻性。
  11. It was amazing that a seventy - year - old man could have had the strength to wade back and forth in a sewer filled with raging water, moving rocks in heavy wind and rain on a dark night lit only by a dim flashlight, for more than two hours. on the way up the hill and back, he had to walk on a road that had already become a rapid, muddy river, and risked being hit by large rocks at any time

    來回攀爬在洪水土石湍急的水溝內，搬移石塊，大風大雨的漆黑山區，靠著微弱的手電筒燈光，爬上爬下不停地搬移水溝內的石塊，整整兩個多鐘頭，又要來回走在變成土石流河道的產業道路上，隨時都有被大石塊砸到的危險，爸爸平安的歸來讓謝師兄更肯定相信明師的保護力！
  12. Considering the unsymmetrical distribution of interface states induced by hot - carrier effects along the channel, the quasi - two - dimensional analysis methods are used to deduced the drain current, threshold voltage and electrical field in channel after hot - carrier degradation and the theoretical results are fully verified with the experimental data and m1ntmos6. 0 simulation output. the degradations of device output conductance, subthreshold conduction and rf characteristics are also analyzed

    針對mos器件熱載流子退化所引入的界面態，根據其沿溝道非均勻分佈的模型，採用準二維分析方法對退化后器件的漏源電流、閾值電壓和飽和區溝道電場作了詳細的理論推導，並與實驗結果和器件二維數值模擬軟體minimos6 . 0的計算結果進行了驗證比較。
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