溫差電勢率 的英文怎麼說

中文拼音 [wēnchādiànshìlǜ]
溫差電勢率 英文
thermoelectric power
  • 溫 : Ⅰ形容詞（不冷不熱） warm; lukewarm; hot; gentle; mild Ⅱ名詞1 （溫度） temperature 2 （瘟） acute ...
  • 差 : 差Ⅰ名詞1 （不相同; 不相合） difference; dissimilarity 2 （差錯） mistake 3 [數學] （差數） differ...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 勢 : 名詞1 （勢力） power; force; influence 2 （一切事物力量表現出來的趨向） momentum; tendency 3 （自...
  • 率 : 率名詞（比值） rate; ratio; proportion
  • 溫差 : [物理學] difference in temperature; range of temperature
  1. The temperature rises and the dc voltage are proportional to the power dissipated, which is equal to the power of the source being measured if the input impedance is suitably matched to the source impedance

    熱偶冷熱結之間的溫度差和熱電勢均正比于耗散在ta2n電阻上的微波功率，如果熱偶的工作電阻與同軸傳輸系統電阻匹配適當，該功率就等於被測源的功率。
  2. Testing method for fine ceramics thermoelectric materials part 1 : thermoelectric power

    細陶瓷熱電材料的試驗方法.第1部分:溫差電勢率
  3. Results showed : ( 1 ) cbt cell death in low tempratures is accompanied by characteristic changes, such as, reduced cell size, distorted nucleus, chromatin condensation and margination and cell ( cytoplasmic ) vacuolization ; cell mortality and ca2 * concentration increase along with time passed in low temperature. mitochondrial membrane potential and 02 increased at first, and then decreased. activities of sod decreased at first, followed by significant increasing and finally depressed

    結果表明： （ 1 ） cbt在低溫協迫下，細胞圓縮，細胞核變形，染色質濃縮且邊位，細胞質空泡狀；細胞死亡率隨處理時間的增加而增加；細胞內鈣離子濃度隨處理時間延長而遞增；線粒體膜電位差在低溫處理早期急速上升，隨后一直下降；細胞內超氧陰離子（ o _ 2 ~ - ）在低溫處理前期出現高峰，接著呈下降趨勢；細胞內sod活性在低溫處理前期減弱，接著上升，然後持續下降。
  4. For the application of sic devices to radiation fields, it is important to know the irradiation effects and characteristics of sic materials and devices. the main contributions in this thesis are as following : temperature - and electric field - dependent electron transport in 6h - s1c is studied by single - particle monte carlo technique. the physical model used in the simulation is developed considering the main scattering mechanisms in details

    為了能充分發揮sic抗輻照的優勢和潛力，本文首先對sic區別于常規半導體的特性作了系統的研究：用單粒子montecarlo方法研究了6h - sic的電子輸運規律，模擬的結果體現了6h - sic具有良好的高溫和高場特性以及遷移率的各項異性，其橫向遷移率和縱向遷移率相差近5倍。
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