滿電子態 的英文怎麼說

中文拼音 [mǎndiànzitài]
滿電子態 英文
occupied electron states
  • 滿 : Ⅰ形容詞1 （全部充實; 達到容量的極點） full; filled; packed 2 （滿足） satisfied; contented; conte...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 態 : 名詞1. （形狀; 狀態） form; condition; appearance 2. [物理學] （物質結構的狀態或階段） state 3. [語言學] （一種語法范疇） voice
  • 電子 : [物理學] [電學] electron
  1. The paper applies the method of the l - s coupling in the pauli exclusion principle and gives a simple method to determine the atom states of equivalent double electrons through l - s interaction fold line along angle

    摘要採用自旋與軌道相耦的方法，在滿足泡利不相容原理和條件下，給出了快速確定同科雙電子原子自旋與軌道相耦合原子態的一種簡單方法對角折線法，這種方法是對確定同科雙電子自旋軌道耦原子態的又是創新方法。
  2. In each case, we present the surface band structure together with the projected bulk band of both ideal and reconstruction surface respectively, the number of the surface states is determined, and the localized surface features and orbital properties of this surface states along the high symmetry lines in the 2d sbz are discussed

    根據電子數目規則，我們斷定處在一o . lev ~ 0 . lev的表面態為全部填滿的陰離子懸掛鍵態或者為原子再構后引起的as一asdimer鍵態，而處在1 . 4ev一1 . 6ev的表面態為陽離子空的懸掛鍵態。
  3. The exportation resistance of a device work device with what link after loading the resistance s the certain connections for should satisfying, in order to prevent mount to load the appearance produce the obvious influence. with each other connect to say to electronics equipments, for example after signal connect the enlarger, ex - class to connect class, only behind first - degree importation resistance before larger than first - degree exportation resistance 5 - 10 times are above, can think the resistance to match good ; connect the box come saying, electronics tube the machine should choose to use with for the enlarger its output to carry the mark to call the resistance the box for, but transistor enlarger then have noing this restrict, can take officing why resistance of equal or approximate box

    一件器材的輸出阻抗和所連接的負載阻抗之間所應滿足的某種關系，以免接上負載后對器材本身的工作狀態產生明顯的影響。對電子設備互連來說，例如信號源連放大器，前級連后級，只要后一級的輸入阻抗大於前一級的輸出阻抗5 - 10倍以上，就可認為阻抗匹配良好對于放大器連接音箱來說，電子管機應選用與其輸出端標稱阻抗相等或接近的音箱，而晶體管放大器則無此限制，可以接任何阻抗的音箱。
  4. Now the ion conductivity of gel polymer electrolyte ( gpe ) can reach the magnitude of 10 - 3s / cm, which can satisfy the practical request. however, it is still lower than that of liquid electrolyte ( 10 - 2 s / cm ), which causes the fall of high rate discharge and low temperature performance of lithium battery

    目前凝膠聚合物電解質（ gpe ）的室溫離子電導率可達10 ~ （ - 3 ） s cm數量級，已經能基本滿足應用的要求，但相比液態電解液的電導率（ 10 ~ （ - 2 ） s cm ） ， gpe的電導率仍然偏低，使得凝膠聚合物鋰離子電池的高充放電速率和低溫性能都大大的降低。
  5. With the development of computer, power electronic, sensor technology, intelligent electric apparatus is the evolution direction of electric apparatus in 21 century. existing contactor testing technology ca n ' t meet the requirement of theory research and production development. based on analyzing the present situation and trend of contactor testing technology, both of contactor testing technology and performance evaluation method, are researched in this paper

    隨著計算機技術、電力電子技術、傳感器技術的不斷完善和發展，智能電器已經成為21世紀新型電器發展的主要方向，現有的接觸器測試技術己難以完全滿足理論研究和產品丌發的需要，為此，本文在分析接觸器測試技術發展的現狀及趨勢的基礎上，對接觸器動態測試技術及性能評判進行研究。
  6. Attitude angular sensor ( electronic compass ) is widely used in fields of aviation. space flight and navigation etc for navigational orientation and especially in the field of military, so the foreign countries are limited to export the high performance of digital module of attitude angular sensor to our country. the aim of research object is to manufacture the all solid state digital module of attitude angular to meet the requirements of multifields

    姿態角傳感器（電子羅盤）可廣泛應用於航空、航天、航海等需要導航定位的眾多領域，尤其在軍事領域得到廣泛應用，因此國外一直限制高性能姿態角數字模塊對我的出口，本課題研製的主要目的就是研製出全固態的姿態角數字化模塊以滿足我國多領域的需要。
  7. 2. in this paper, the continuity of the wavefunction and of its derivative divided by the band - mass can be satisfied and the number of the terms is small when calculating the energies of the single electron in a square quantum wire with finite barriers, then this wavefunction can also be selected as the envelope function in studying the impurity states and the excitons in the square quantum wires with finite barriers

    2 .由於本文所取波函數滿足波函數的連續性條件和粒子流的守恆條件，並且計算有限深方形量子線中單電子的能量時需要展開的項數較少，故此波函數也可選為有限深方形量子線中雜質態、激子等問題的包絡函數。
  8. This paper has studied the wavefunction expanded in terms of the two - dimensional harmonic oscillator eigenfunction through calculating the energy of the ground state, the energy of the first excited state and the oscillator strength in a square wire with finite barriers and studied its application in these fields. the most remarkable advantage of this wavefunction is that it can satisfy the continuity of the function and of its derivative divided by the band - mass and it is convenient to calculate some physical magnitudes because the number of the terms is small

    本文通過計算有限深方形量子線中單電子的基態能、第一激發態能和振子強度研究了以二維諧振子本徵函數為基展開的波函數以及它在這些問題中的應用，此波函數的顯著優點是：在邊界處滿足波函數的連續性條件和粒子流的守恆條件，並且展開項數少，計算方便。
  9. The properties of cn thin films such as their morphology, component, crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed, showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique, the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed. the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process, based on this the growth mode of cn thin films on the si substrate is proposed. the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted, which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate

    採用pld技術進行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應氣體壓強對薄膜結構特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結構成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強pld的氣相反應，給出了提高薄膜晶態sp ~ 3鍵合結構成分和薄膜的含n量可行性途徑；應用pe - cvd技術以ch _ 4 + n _ 2為反應氣體並引入輔助氣體h _ 2 ，得到了含n量為56at的晶態cn薄膜；探討了cn薄膜形貌、成分、晶體結構、價鍵狀態等特性及其與氣體壓強和放電電流的關系，證明了- c _ 3n _ 4薄膜沉積為滿足動力學平衡條件的各種反應過程的競爭結果；採用光學發射譜技術對cn薄膜生長過程進行了實時診斷，得到了實驗參量對等離子體中活性粒子相對濃度和氣相反應過程的影響規律，給出了cn薄膜沉積的主要反應前驅物，揭示了cn薄膜特性和等離子體內反應過程之間的聯系；採用高氣壓pe - pld技術研究了不同襯底溫度條件下cn化合物薄膜的結構特性，揭示了si原子對薄膜生長過程的影響，給出了si基表面碳氮薄膜的生長模式；在金剛石研磨和催化劑fe處理的si襯底上進行cn薄膜沉積，證明了通過控制材料表面動力學條件可以改變碳氮薄膜結構特性，並可顯著提高晶態碳氮材料的生長速率。
  10. The researchers developed a manufacturing method that begins by making a bas - relief mold in a quartz plate that contains an indented image of transistors, wires or other components of electronic circuits

    研究人員所發展的製造方法，是先在一塊石英板上做出淺浮雕鑄模，上面縮印了電晶體、導線或其他電子?路，然後再把這個鑄模放到晶片表面的一層液態單體上，液體便會填滿鑄模的凹陷處。
  11. Yet, most existing high speed on / off valves use electromagnet as their electicity - mechanism conversion element, and good performant electromagnets have to be imported from other countries, in such situation, it is difficity to make excelent high speed electromagnet valve made in our country, even if we can make good performant high speed electromagnet valve in our country, it still has the shortcoming of not high enough respond speed, too small placket and big volumeo in this thesis, a new high speed on / off valve is developed based on two types of existing valves, this new valve has higher respond speed, a little big placket and little volume o for the new valve, several main task was made out as below : a ) several types of high speed on / off were first analyzed, then the basic performance of the actuator of the new valve was analyzed

    高速開關閥是20世紀80年代發展起來的一種具有響應速度快、抗污染能力強、與電子電路配合好等特點的一個良好的動力放大元件。但是現有的高速開關閥基本上採用電磁鐵為電?機轉換元件，高性能的電磁鐵又基本為進口，難以滿足高性能高速開關閥國產化的要求，即使是高性能的電磁鐵式高速開關閥，仍存在著響應速度不夠大、開口過小、體積較大的缺點。本文在現有兩種高速開關閥的基礎上，設計了一種新穎的高速開關閥，在提高其動態性能的同時，增大了閥的開口，減小了閥的體積。
  12. The disease in jaw surface will be drop the bite force ; the bite force in the patient who disease in temporal jaw joint descent obviously than normal person ; serious mistake in join deformity, the acute damage in the area arthritis can also drop the bite force evidently ; compare to normal children, wenneberg fund that the bite force lower and the duration of the biggest bite force shorter in the children who fall ill of the chronic arthritis ; the bite force also be used in appraise of the recovery condition in surgical operation 、 disorder in jaw arthritis and the serious bone offset in bite lopsided etc. some materials, it will be produce polarization phenomenon inside when suffered some force in certain direction, at the same time, it produce opposite electric charge in two of the surface ; and resume to the station of on - electrification when removed the outside force ; change the direction of the outside force, the polarity of the electric charge also be changed, this kind of phenomenon is called as “ piezoelectric effect ”

    本文設計了石英晶體壓電傳感器，以它作為傳感元件把咬合力信號轉變成電信號;利用ts5860型準靜態電荷放大器把傳感器的電荷信號轉變成電壓信號;選用usb7822數據採集卡，編寫該數據採集卡的驅動程序，採集該電壓信號並送到計算機里;編寫labview程序對該信號進行處理，得出咬合力值和咬合力曲線，並把測量結果以電子表格的形式保存，以便做進一步的分析和研究。通過對該測量儀的靜態標定、動態標定、溫度漂移標定以及實際測量試驗，證實了本測量儀具有較高的靈敏度、受動態力和溫度變化的影響比較小、能實時地顯示咬合力曲線和較準確地顯示咬合力值，滿足了咬合力測量的要求。
  13. They can dynamically change the distribution of electric field, carriers and current densities in pcss, caused output current to delay and also strengthen the local electric field enough to satisfy qualification of domain, and then cause avalanche. the time of delay is determined by the time of attaining the qualification of domain

    非線性光電導開關的時間延遲效應則是由於半絕緣gaas材料中的el2深能級中心動態地改變開關中的電場、載流子濃度引起的；延遲時間的長短主要由滿足成疇所需條件的時間決定。
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