漂移力 的英文怎麼說

中文拼音 [biāoyílì]
漂移力 英文
drift force
  • 漂 : 漂動詞[方言] （事情、帳目等落空） fail; end in failure
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 力 : Ⅰ名1 （力量; 能力） power; strength; ability; capacity 2 [物理學] （改變物體運動狀態的作用） forc...
  • 漂移 : 1 （漂流移動） be driven by the current; drift about2 [電子學] drift; shift; shifting; shunt runn...
  1. Lack of orthogonality between a suspension(or centering)axis and the spin axis will then result in a drift-producing torque exerted on the gimbal.

    懸掛軸和自轉軸間的不垂直度將引起產生漂移作用在框架上的力矩。
  2. Its static error is categorized into three types : irrelative with the specific force, relative with the first - order of specific force and relative with the square of specific force

    把漂移誤差分為與比力無關、與一次方成比例和與二次方成比例三類。
  3. The balance change under the influence of gravity might cause a spurious torque resulting in drift of the gyro attitude reference.

    在重力的影響下平衡的改變會形成不必要力矩，結果使陀螺姿態基準產生漂移。
  4. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  5. Cosmic ray test was carried out to choose and optimize working parameters of full - length prototype and its data acquisition system, verify the electronics system about dynamic range, drift time measurement search window, charge measurement integral width, work stability and electronics grounding and noise. in experiment, acquired abundant experience with the solution of actual problem and verified their reliability of physical design. this lays the foundations for the successful construction of the besiii drift chamber and electrical system

    測試過程中我們調整了電子學的動態范圍、漂移時間和電荷測量參數驗證了電子學系統工作的穩定性、抗干擾能力及噪聲水平等並成功解決了實驗過程中遇到了問題。通過長時間的取數進一步檢驗了全長模型和電子學系統工作穩定性，驗證了全長模型及其數據獲取系統物理設計的可靠性，為漂移室和電子學系統的成功研製奠定了基礎。
  6. The result shows that a vvibdv strain was obtained, the above work lay a important role for further studying on the molecular biological mechanism of antigenic drift and virulence variation of ibdv, molecular epedimiology, it also provided the basis for recombinant and gene deleted vaccine of ibdv

    本實驗可以幫助我們進一步探討ibdv抗原性漂移和毒力變化的分子生物學機制，追溯ibdv的起源，理解病毒的傳播方式。同時也為研製開發基因重組疫苗和缺失疫苗打下一定的基礎。
  7. Vigorously challenged yet widely ignored, the theory had languished for half a century, primarily due to its lack of a plausible mechanism to support the proposed drift

    因受到有力的挑戰進而廣泛地遭遇冷淡，這個理論蕭條了半個世紀，這主要是因為缺乏可信的漂移機制來證明其論點。
  8. And we consider sufficiently all kinds of factors, such as conductance of tube, leak and deflate of system, pump speed, ionization and re - ionization of high - energy ion taking place in the process of transmission. furthermore, we take two ways to discuss pressure distribution of cell

    在系統軸線上壓力分佈分析過程中，綜合考慮了管道的流導、系統的漏氣和放氣、泵的抽速、高能離子在管道內漂移過程中發生的電離和再電離等因素的影響。
  9. Drift rates will depend upon both the strain level and the temperature.

    漂移速率既依賴于應力的大小，又依賴于溫度。
  10. The static drift error and dynamic test error of liquid floated reactive rate gyro are analyzed also

    分析了液浮力反饋速率陀螺的靜態漂移誤差和動態測量誤差。
  11. Performance for a piezoresistive transducer pressure sensor to thermal and pressure environments can be predicted by finite element method. a simplified 1 / 8 model, considering silicon dioxide and nitride process as well as stack anodic bonding and adhesive bonding processes, was developed. the fem results were found to be comparable to experimental data. case studies suggested that pyrex stack induces certain amount of non - linearity, while it isolates hard epoxy nonlinear effect. flexible epoxy bonding or soft adhesive bonding is preferred to the packaging process. the viscoelasticity and viscoplasticity of bonding material will result in hysteresis and drift errors to sensor output. however, soft adhesive s influence on sensor can be ignored under relative stable environments. more over, detailed design and process information will help to improve modeling application

    熱、壓環境下壓阻變換壓力傳感器的性能可以通過有限元方法預測.這里研究了簡化的1 / 8模型，模型考慮了二氧化硅和氮化硅生成過程及堆陽極鍵合和膠粘結合過程.結果發現有限元預測結果和實驗數據具有可比性.範例研究表明，硼硅堆導致產生一定的非線性，但它隔離了硬環氧樹脂的非線性.在包裝過程中最好使用柔性環氧黏合或軟黏膠性結合.黏合材料的黏彈性和黏塑性將會導致傳感器輸出的滯后和漂移誤差.然而，在相對穩定的環境下，軟黏合劑對傳感器的影響可以忽略.此外，詳細的設計和過程信息有助於提高模型的適用性
  12. Based on analysis of the iso - rigidity of the gyro assembly, the requirement for making the joints match each other is offered, which has a guiding significance for joints assembly and selection. based on analysis of rigidity and drift error for the dynamically tuned gyro, a cross model including an inner and an outer flexible hinges is established

    在對動力調諧陀螺剛度和漂移誤差分析的基礎上，建立了由內外撓性接頭裝配所形成的十字型鉸鏈模型，並利用偽剛度理論對該模型進行了分析，得出了內外撓性接頭兩鉸鏈的相對位置關系對十字型鉸鏈模型的影響曲線。
  13. Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices

    被譽為最有潛力的寬禁帶半導體材料一sic ，因其具有禁帶寬度大、擊穿電場高、熱導率大、電子飽和漂移速度高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性，被廣泛地應用於光電器件、高頻大功率、高溫電子器件。
  14. As the only one among nearly 200 polytypes of different crystalline sic, which has a cubic crystalline structure, p - sic is an excellent candidate for fabrication of high power devices because of its high values of saturated electron drift velocity and electron mobility in comparison with the other sic polytypes

    碳化硅是碳化硅近200種不同結晶形態中唯一的純立方結構晶體，載流子遷移率高，電子飽和漂移速度大，更適合於製造電子器件特別是電力電子器件之用。
  15. Then the gyro ’ s working theory and cause of drift are summarized

    並對液浮力反饋速率陀螺儀的工作原理和產生漂移的原因進行了概述。
  16. The effect of flexure support to the dtg precision is studied, and the drift equation of dtg is give

    研究了撓性支承特性對動力調諧速率陀螺儀精度的影響，推導了動力調諧速率陀螺儀的漂移公式。
  17. The visual motion track and position information on the track analysis map of navigation mark will help managers make their decisions effectively. multiple alarms are also used to send alarm messages to managers rapidly and reliably

    通過直觀的航標軌跡分析圖詳細地顯示航標的漂移軌跡和位置信息，為航標管理人員提供有力的決策支持：使用多種報警方式，可靠地向航標管理人員快速傳遞警報信息。
  18. Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density

    基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大
  19. The hydrodynamic and the drift - diffusion models are the most widely used models to describe semiconductor devices today

    在所有描述半導體的數學模型中，流體動力學模型和漂移擴散模型是應用最廣泛的模型。
  20. As one of the several models to improve the drift - diffusion model, the hydrodynamic model plays an increasingly important role in simulating the behavior of the charge carrier in sub - micron semiconductor devices because it can exhibit velocity overshoot and ballistic effects for which are not accounted the classical drift - diffusion model

    漂移擴散模型自上世紀五十年代初一出現，就得到了人們的廣泛關注。但隨著微電子技術的發展，它不能很好的解釋半導體中的有些現象，流體動力學模型就應運而生了。
分享友人
分享到 Line

分享到臉書