漂移區 的英文怎麼說

中文拼音 [biāoyíqū]
漂移區 英文
drift region
  • 漂 : 漂動詞[方言] （事情、帳目等落空） fail; end in failure
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 區 : 區名詞（姓氏） a surname
  • 漂移 : 1 （漂流移動） be driven by the current; drift about2 [電子學] drift; shift; shifting; shunt runn...
  1. Zhoushan is sea area which fertility is tiptop in our country. sea surface wind is important factor of influencing contrail of excursion oil and culturist so investigating sea surface wind of zhoushan and setting up numerical forecast model which fits this sea area can offer tool for study sea wind in this area and let us has a mensurable acquaintance ship of effect degree of physics factors which effect sea surface wind in zhoushan sea area and acquaint oneself with physic process

    而海面風是影響溢油油團漂移軌跡和養殖業的重要因素，因此，對舟山海域的海面風進行研究，建立適合此區域的數值預報模式，可為研究該區域海面風作用過程提供數值預報工具，使我們對近海區域海面風場作用中物理因子的影響程度有更定量的認識，並對物理過程和影響機制有更深刻地了解。
  2. The results show that in the case of no wind the oil film moves southwestward along with the tidal current, its area increases and thickness decreases, and the port is not polluted during ebb tide ; a part of the oil film is blocked by the northern jetty, and stays in the port during flood tide

    計算結果表明，在靜風情況下，落潮期間油膜隨落潮流向西南方向漂移，面積擴大，厚度減小，港區未受油污的影響；漲潮期間油膜受北導堤的阻擋，部分油污留在港區。
  3. In this essay i argue that the writing of american jazz age novelist f. scott fitzgerald responds to the developing national culture of his time, here described as an evolving relation between the marginality of the region and the hegemony of the center. like many of the characters in his novels, fitzgerald ' s perceived liminality from nation and canon - his work did not achieve repute until after his death - produced, paradoxically, dependence on those values the writer felt most distant from. to a far greater extent than hemingway, fitzgerald fictionalized the commodity culture of the american center which he, in time, came to reject in favor of a moral posture. fitzgerald ' s migration from the perceived margins of american literary discourse to status as a posthumous, centered canonical figure has three specific dimensions - the geographical, the canonical, and the moral - all of which combine to produce a significant ambivalence, beyond " modernist " credentials, in his life and legacy

    本文認為，美國爵士時代的小說家菲茨傑拉德的作品對于作者所處時代和處于發展之中的民族文化（即區域邊緣與國家霸權之間的演進關系）作出了回應.正如其小說中的許多人物一樣，菲茨傑拉德從國家和典律中感知到閾限性（他自己的作品直到死後才獲得盛譽） ，這使得他依賴于自己認為是最為邊遠的價值觀念.與海明威相比較，菲茨傑拉德在更大程度上將位於美國中心的商品文化小說化，而最終他又出於道德考量將它予以拒絕.菲茨傑拉德從明顯的美國文學話語邊緣向去世之後被經典化的中心地位的漂移表現在地理、典律、道德三個方面.三者交織，使得學界關於他的紛爭超越了現代主義者身份問題，在關於他的人生和文學遺產問題上也是褒貶不一，眾說紛紜
  4. By analyzing the simulated velocities, it was shown that : in the middle of eddies, the drifter was controlled mainly by the sea surface geostrophic current ; in the edge of eddies, the ekman drift played an important role in diving the drifter into ( out of ) eddies ; the mean circulation made the drifters flow correctly in some regions

    背景流的空間分佈決定著浮標漂移的最終去向，特別是背景流方向改變的區域，背景流的存在使得模擬浮標軌跡能夠像真實軌跡一樣運移。
  5. The anomalous fac pair creates a transient dusk - dawn electric field over the polar cap, tailing behind the original region current and drifting towards the night side until it falls into oblivion

    該異常場向電流對在極蓋區形成瞬間昏晨電場，尾隨原區電流向夜側方向漂移直至湮沒。
  6. During the research of the novel high - voltage soi lateral structure, we established its blocking theory based on poisson equation, which classifies its blocking mechanism by describing the potential distribution in the drift region very well when the device is in the blocking state

    在新型橫向高壓器件結構tsoi的研究中，本文通過二維泊松方程建立其解析理論，正確描述了漂移區中電場的分佈，並闡明其耐壓機理。
  7. During the high - voltage device design, the thick epitaxial layer ldmos which is compatible with current technology was researched. this device used piecewise vld and multiple region structure f reduce field layer. the using of the f reduce field layer effectively reduce the surface electric field of the device, shorten the length of its drift region, enlarge the choice of range of the ion implant dose of the p layer, and effectively restrain the disadvantageously affection on the breakdown voltage of the interface charge qss

    在高壓器件研究中對與現有工藝相兼容厚外延ldmos進行研究，該結構採用分段變摻雜多區p ~ -降場層，有效降低器件的表面電場，縮短器件的漂移區長度，增大p ~ -降場層注入劑量的選擇范圍，並有效地抑制界面電荷qss對器件耐壓的不利影響。
  8. The models currently used are either modified from low voltage mos models or based on macro model of simple polynomial established dddmos drift region resistance, both of which are limited and cannot provide a globally accurate physical model

    業界目前使用的模型只是在低壓mos模型基礎上作一些修改，或者通過用簡單多項式的形式建立dddmos漂移區電阻的宏模型以建模。
  9. In the model of on - resistance, we have considered the lateral doping distribution in ldmos channel and vertical doping distribution in drift region. then we provide the explicit dependence between on - resistance and doping distribution parameter

    導通電阻模型考慮了ldmos的溝道橫向雜質分佈和漂移區雜質縱向分佈的結構特點，給出了導通電阻與雜質分佈參數的明確函數關系。
  10. Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation

    採用數值模擬分析方法，深入研究了漂移區長度、漂移區濃度、埋氧層厚度、頂層硅厚度、氧化層電荷以及襯底偏壓對resurf效應、擊穿電壓和導通電阻的影響。
  11. The macro model of drift region resistance was established based on the solution of poisson ’ s equations and continuity equations. by the combination of spice mos ( level = 3 ) and the macro model, the complete dddmos model was then obtained, which accords well with simulated data. by simulating and comparing different devices of different process parameters, the model is applicable for different bias regions and can be useful in the power integrated circuit research in future

    首先介紹了器件建模的基本原理及相關模擬技術，然後利用工藝模擬軟體生成器件基本結構，並對其基本特性進行了分析;分析了業內和學術界比較通用的高壓器件建模的方法，隨后在模擬實驗的基礎上著重分析了dddmos的物理特性，在求解泊松方程、連續性方程等基本方程的基礎上，建立有物理意義的漂移區電阻的宏模型;隨后結合spicemos （ level = 3 ）模型而得到完整的dddmos模型，此模型與模擬數據符合得比較好，通過對不同工藝參數的器件進行模擬比較，該模型能夠覆蓋不同的工作偏壓范圍，具有較明確的物理意義，對今後的功率集成電路的研發有一定的參考意義。
  12. In theoretical analysis, the motion of radially - emitted electron beam in diode region and drift region has been analyzed, and the relation between radial momentum or current of electron beam and the guiding magnetic field has also been studied, then the possibility to optimize the guiding magnetic field has been derived. the motion of radially - emitted beam electrons in smooth bore magnetron and smooth bore milo has also been studied theoretically. at last, the motion of radially - emitted beam electrons in compound axial and azimuthal magnetic field has been studied

    在理論分析中，初步分析了軸向發射條件下電子在二極體區域和漂移區的運動規律，電子徑向動量隨著外加磁場變化的規律，以及電子束電流隨著外加磁場的變化規律，還有二極體區域磁場優化的可能性;分別研究了有軸向磁場時以及有角向磁場時徑向發射的電子在光滑陽極結構中的運動規律，最後分析了在軸向和角向復合磁場中電子的運動規律。
  13. To elucidate the antigenic drift and evolution of h9n2 subtype avian influenza viruses ( aivs ), five isolates from the north of henan province during 1998 - 2002 were compared and analysed by cross - hemagglutinin inhibition test ( hi ), cross - virus neutralization test ( vn ) in the chicken embryo and chicken embryo primary kidney cell ( cek ) and cross protection against challenge infection test

    為了探討h _ 9n _ 2亞型禽流感病毒的抗原性有否發生漂移，本研究從生物學角度和ha基因分子水平上對1998 ? 2002年間在河南省豫北地區分離到的5株h _ 9n _ 2亞型禽流感病毒的抗原性變化進行了比較和分析。
  14. It is represented the optimization and implementation of step drift doping profiles soi ldmos

    Soi階梯摻雜漂移區ldmos的優化設計與制備實驗。
  15. In this thesis, the optimization of soi step drift doping profiles ldmos is addressed. the work of the author included the optimization of soi single - resurf ldmos and ; design and implementation of a step drift doping profiles soi ldmos

    圍繞soi階梯摻雜ldmos器件的優化問題，本文從器件結構和工藝材料方面出發，借鑒已有理論，進行了soisingle - resurfldmos的優化研究以及soi階梯摻雜漂移區ldmos的優化設計及器件制備實驗。
  16. The result of numerical simulation indicated the tradeoff of breakdown voltage and on - resistance. the selection of structure prefer the thicker buried oxide layer and the thicker soi layer and the shorter drift length when the breakdown was happened at the interface of soi and buried oxide layer

    模擬結果表明，擊穿電壓與導通電阻存在明顯折衷關系，因此在選擇器件結構時要選擇埋氧層厚度大，漂移區濃度高，在保證擊穿發生在縱向的情況下，漂移區長度越小越好。
  17. In addition to pic method, the numerical computation method is used as a compensation for the study of the characteristics of electron beam. the two methods are used separately to attain the trajectory of axially - emitted electron beam in diode region and drift region, and the trajectory of radially - emitted electron beam with axial, azimuthal, as well as compounded axial and azimuthal magnetic field. three two - dimensional codes and two three - dimensional codes have been made out to compute the trajectories

    本文特點之一就是採用粒子模擬和數值計算相結合的方法進行模擬計算，分別得到了軸向發射條件下電子在二極體區域和漂移區的軌跡，徑向發射條件下電子在角向磁場、軸向磁場、角向和軸向復合磁場中電子的運動軌跡，分別編制了三個二維電子軌跡計算程序和兩個三維電子軌跡計算程序，最後將粒子模擬和數值計算得到的結果進行了對比，得到了較為滿意的結果。
  18. According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage

    Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。
  19. And the simulation on the nonlinear beam - wave interaction of two - cavity gyroklystron is made. the influences of the drift length and beam voltage and current and the velocity ratio of the electron beam and et al. on efficiency and gain are analyzed in detail

    並對34ghz兩腔迴旋速調管的注?波互摘要作用進行了大量的數值模擬研究，分析了漂移區長度、電壓、電流、速度lhq值、磁場k ， ； 、注入波功率等多種因素對互作用電子效率及增益的影響。
  20. We have done the following work in this paper : 1. proposal of a novel high - voltage soi lateral structure ( tsoi ), and establishment of its blocking theory ; 2. proposal of devices based on epitaxial simox soi ( esoi ) substrate ; 3

    本文主要進行了三個方面的工作： 1 、提出了降場電極u形漂移區的橫向高壓器件結構tsoi （ trenchsoi ） ，並建立了該結構的解析理論[ 1 ] ； 2 、提出基於simox外延襯底esoi （ epitaxialsimoxsoi ）的器件結構； 3 、設計了基於simox處延襯底結構的功率開關集成電路。
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