漂移基極 的英文怎麼說
中文拼音 [biāoyíjījí]
漂移基極
英文
drift base-
This theoretic model employs the basic idea of correlation measurement, achieve the density wave speed by the correlation of the signals of upper and lower sensors, and get the total flow rate and water cut through the theoretic relationship of density wave speed and total flow rate as well as holdup with the help of drift flux model so as to accomplish the oil / water two - phase flow measurement at last, using the limited available experiment data, the theoretic model has been simplified into an applicable linear alternative which is suitable to homogeneous oil / water two - phase flow measurement to accomplish the oil / water two - phase flow measurement using the density wave phenomena is of highly theoretically valuable for density wave theory research as well as oilavater two - phase flow measurement research. to develop new type oil / water two - phase flow instrumentation based on this theoretic measurement method will be very applicable and promising
在此基礎上，針對穩態密度波理論提出了基於密度波理論的油水兩相流測量理論模型，該模型以密度波傳播理論作為基礎，通過上下游傳感器信號相關獲得密度波傳播速度，利用密度波傳播速度與總流量以及持相率的理論關系結合漂移模型來求解總流量和含相率，實現油水兩相流的測量，在理論分析的基礎上，在實驗資料有限的條件下，對基於密度波理論的油水兩相流測量理論模型作了極限的簡化，提出了本文油水兩相流測量理論方法應用在測量均勻油水兩相流中的實用線性模型。Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density
基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大We have done the following work in this paper : 1. proposal of a novel high - voltage soi lateral structure ( tsoi ), and establishment of its blocking theory ; 2. proposal of devices based on epitaxial simox soi ( esoi ) substrate ; 3
本文主要進行了三個方面的工作： 1 、提出了降場電極u形漂移區的橫向高壓器件結構tsoi （ trenchsoi ） ，並建立了該結構的解析理論[ 1 ] ； 2 、提出基於simox外延襯底esoi （ epitaxialsimoxsoi ）的器件結構； 3 、設計了基於simox處延襯底結構的功率開關集成電路。
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