漂移電流 的英文怎麼說

中文拼音 [biāoyídiànliú]
漂移電流 英文
drift current
  • 漂 : 漂動詞[方言] （事情、帳目等落空） fail; end in failure
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 流 : Ⅰ動1 （液體移動; 流動） flow 2 （移動不定） drift; move; wander 3 （流傳; 傳播） spread 4 （向壞...
  • 漂移 : 1 （漂流移動） be driven by the current; drift about2 [電子學] drift; shift; shifting; shunt runn...
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. The anomalous fac pair creates a transient dusk - dawn electric field over the polar cap, tailing behind the original region current and drifting towards the night side until it falls into oblivion

    該異常場向電流對在極蓋區形成瞬間昏晨電場，尾隨原區電流向夜側方向漂移直至湮沒。
  2. In general, a precise resistor is in series with one of the resistors in wheatstone bridge to compensate the zero offset, and the other one is in parallel with another arm of the wheatstone bridge to compensate thermal zero drift. based on this principle, in this paper, a compensation method based on virtual instrument technology has been put forward. actuated by current source, a good calculation method of compensation resistors and their position in the bridge is deduced

    本文基於串並聯電阻補償法的原理，提出了一種基於虛擬儀器的誤差補償方案，推導了在恆流源供電下可以精確的計算出補償電阻大小和補償位置的演算法，並且在虛擬儀器軟體平臺labview上完成了數據採集、處理、顯示等軟體的設計，經過實驗的驗證，對傳感器的零點溫度漂移補償取得較好的效果，而對靈敏度溫度漂移的工藝補償亦有一定的效果。
  3. Output voltage and current is often distorted in half bridge converter because voltage unbalance of input capacitors though its application is very abroad

    摘要半橋逆變器應用廣泛，但存在直流分壓電容不均壓，使分壓電容中點電壓漂移，導致輸出電壓和電流畸變的缺點。
  4. The second one : we studied the effect of temperature on performance of lds. it was found that threshold current increase exponentially outpower and slope efficiency decrease parabola and exponentially respectively. coefficient of temperature shift is 0. 24 / k, wheras characteristic temperature also decrease with rise of temperature

    研究了溫度對激光器各參數的影響，隨著溫度的增加，閾值電流呈指數增加，輸出功率和斜率效率分別呈拋物線和指數關系遞減，同時特徵溫度也減少，波長隨溫度的漂移系數為0 . 24nm ，並且總結了一些溫度和結構設計方面的關系。
  5. In theoretical analysis, the motion of radially - emitted electron beam in diode region and drift region has been analyzed, and the relation between radial momentum or current of electron beam and the guiding magnetic field has also been studied, then the possibility to optimize the guiding magnetic field has been derived. the motion of radially - emitted beam electrons in smooth bore magnetron and smooth bore milo has also been studied theoretically. at last, the motion of radially - emitted beam electrons in compound axial and azimuthal magnetic field has been studied

    在理論分析中，初步分析了軸向發射條件下電子在二極體區域和漂移區的運動規律，電子徑向動量隨著外加磁場變化的規律，以及電子束電流隨著外加磁場的變化規律，還有二極體區域磁場優化的可能性;分別研究了有軸向磁場時以及有角向磁場時徑向發射的電子在光滑陽極結構中的運動規律，最後分析了在軸向和角向復合磁場中電子的運動規律。
  6. This paper introduces a power controlling system for electrosurgical generator based on thyristor, and proposes a power compensating method to maintain the output power invariable when the ac voltage fluctuates

    介紹了基於可控硅整流電路的高頻電刀控制系統，並針對該類型電刀的輸出功率隨電網電壓波動而發生漂移的問題，採用了一種功率補償的方法，實現輸出功率在不同的電網電壓的波動下保持恆定。
  7. This paper introduces a power controlling system for electrosurgical generator baaed on thyristor, and proposes a power compensating method to maintain the output power invariable when the ac voltage fluctuates

    摘要介紹了基於可控硅整流電路的高頻電刀控制系統，並針對該類型電刀的輸出功率隨電網電壓波動而發生漂移的問題，採用了一種功率補償的方法，實現輸出功率在不同的電網電壓的波動下保持恆定。
  8. The over - current relay works to protect oscillation tubes and rectifier, when the current exceeds its limits. frequency deviation caused by faulty operation is also prevented

    當電流超過限制值時，過負荷電流繼電器自動保護振蕩管和整流器，同時可以避免由不當操作所引起的頻率漂移。
  9. And we consider sufficiently all kinds of factors, such as conductance of tube, leak and deflate of system, pump speed, ionization and re - ionization of high - energy ion taking place in the process of transmission. furthermore, we take two ways to discuss pressure distribution of cell

    在系統軸線上壓力分佈分析過程中，綜合考慮了管道的流導、系統的漏氣和放氣、泵的抽速、高能離子在管道內漂移過程中發生的電離和再電離等因素的影響。
  10. Investigation of plasma drift velocity vs time in intense electron beam diode

    強流脈沖電子束二極體等離子體漂移速度的研究
  11. ( 2 ) the process of dc discharge in o2 / n2 mixtures with the different n2 concentration has been simulated. the dependences of number of collisions with the e / n and the energy of electron are given. it is analyzed stressfully that the process of electron - molecule collision with the e / n and the energy of electron in air at atmospheric pressure

    對于o _ 2 n _ 2混合氣體，模擬了不同配比條件下直流放電過程，得出了發生碰撞的粒子數隨e n 、電子能量的變化；著重分析了空氣中激發、電離、分解及分解電離碰撞的粒子數隨e n的變化，給出了電子漂移速度和平均電子能量隨e n的變化。
  12. As the only one among nearly 200 polytypes of different crystalline sic, which has a cubic crystalline structure, p - sic is an excellent candidate for fabrication of high power devices because of its high values of saturated electron drift velocity and electron mobility in comparison with the other sic polytypes

    碳化硅是碳化硅近200種不同結晶形態中唯一的純立方結構晶體，載流子遷移率高，電子飽和漂移速度大，更適合於製造電子器件特別是電力電子器件之用。
  13. The accurate calculation of the input voltage and the compensation for the dc - offset error and the variation of the stator resistance are important factors in practical implementation of the integration since they can cause a drift in the stator flux linkage trajectory and furthermore deteriorate the quality of torque control

    因此，輸入電壓的準確計算、直流漂移量的補償以及定子電阻變化的補償都是影響積分計算準確性的重要因素，這些誤差會導致定子磁鏈軌跡的偏移，進而降低系統轉矩控制的性能。
  14. Frequency drifts due to : dc voltage, temperature, vswr

    頻率漂移跟直流電壓、溫度、駐波比有關。
  15. Less drift will result from making c with a few parallel caps, to reduce the heating effect of the oscillating current when spread out over a larger plate area

    當分為一個更大的平面面積時，通過電容c和一些電容並聯將導致更少的漂移，這樣來減少振蕩電流的熱效應。
  16. Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density

    基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大
  17. As one of the several models to improve the drift - diffusion model, the hydrodynamic model plays an increasingly important role in simulating the behavior of the charge carrier in sub - micron semiconductor devices because it can exhibit velocity overshoot and ballistic effects for which are not accounted the classical drift - diffusion model

    漂移擴散模型自上世紀五十年代初一出現，就得到了人們的廣泛關注。但隨著微電子技術的發展，它不能很好的解釋半導體中的有些現象，流體動力學模型就應運而生了。
  18. Pic simulations are performed to determine gap scaling in a high density pegs. comparisons of simulation results with simply theory results and experiment results, indicate that the pegs gap is always equal to the critical gap for magnetic insulted electron flow. it is important to note that, the vacuum electron flow to the anode causes current loss and the

    另外，根據模擬結果還得到了兩個重要結論：電流損失是由真空漂移電子的出現所造成的，電流損失的大小與負載阻抗成近似正比關系；負載阻抗等於peos的流阻抗時，負載獲得功率最大。
  19. And the simulation on the nonlinear beam - wave interaction of two - cavity gyroklystron is made. the influences of the drift length and beam voltage and current and the velocity ratio of the electron beam and et al. on efficiency and gain are analyzed in detail

    並對34ghz兩腔迴旋速調管的注?波互摘要作用進行了大量的數值模擬研究，分析了漂移區長度、電壓、電流、速度lhq值、磁場k ， ； 、注入波功率等多種因素對互作用電子效率及增益的影響。
  20. Graded doping is adopted in both sides of the junction ( double graded doping ). this results in a strong ( drift ) electric field throughout the whole active layer. this field will accumulate minority carriers effectively and the whole internal quantum efficiency is increased

    漂移場的形成是通過mbe技術，在結的兩側都採用梯度摻雜（即雙梯度摻雜） ，從而在整個有源層都建立起一個強的（漂移）電場，有效地利用載流子在電場作用下的漂移作用收集少數載流子，使得總內量子效率得以提高。
分享友人
分享到 Line

分享到臉書