漂移電導 的英文怎麼說

中文拼音 [biāoyídiàndǎo]
漂移電導 英文
hopping conduction
  • 漂 : 漂動詞[方言] （事情、帳目等落空） fail; end in failure
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 漂移 : 1 （漂流移動） be driven by the current; drift about2 [電子學] drift; shift; shifting; shunt runn...
  1. In general, a precise resistor is in series with one of the resistors in wheatstone bridge to compensate the zero offset, and the other one is in parallel with another arm of the wheatstone bridge to compensate thermal zero drift. based on this principle, in this paper, a compensation method based on virtual instrument technology has been put forward. actuated by current source, a good calculation method of compensation resistors and their position in the bridge is deduced

    本文基於串並聯電阻補償法的原理，提出了一種基於虛擬儀器的誤差補償方案，推導了在恆流源供電下可以精確的計算出補償電阻大小和補償位置的演算法，並且在虛擬儀器軟體平臺labview上完成了數據採集、處理、顯示等軟體的設計，經過實驗的驗證，對傳感器的零點溫度漂移補償取得較好的效果，而對靈敏度溫度漂移的工藝補償亦有一定的效果。
  2. Output voltage and current is often distorted in half bridge converter because voltage unbalance of input capacitors though its application is very abroad

    摘要半橋逆變器應用廣泛，但存在直流分壓電容不均壓，使分壓電容中點電壓漂移，導致輸出電壓和電流畸變的缺點。
  3. Characterized by wide band gap, high breakage electric field, high thermal conductivity, high saturated electron mobility, cubic silicon carbide ( 3c - sic ), considered as one of the most promising wide band gap semiconductors, is widely utilized in high temperature, high frequency and large power semiconductor devices

    3c - sic被譽為最有潛力的寬禁帶半導體材料，具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優點，是高溫、高頻、高功率半導體器件的首選材料。
  4. In the model of on - resistance, we have considered the lateral doping distribution in ldmos channel and vertical doping distribution in drift region. then we provide the explicit dependence between on - resistance and doping distribution parameter

    導通電阻模型考慮了ldmos的溝道橫向雜質分佈和漂移區雜質縱向分佈的結構特點，給出了導通電阻與雜質分佈參數的明確函數關系。
  5. Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation

    採用數值模擬分析方法，深入研究了漂移區長度、漂移區濃度、埋氧層厚度、頂層硅厚度、氧化層電荷以及襯底偏壓對resurf效應、擊穿電壓和導通電阻的影響。
  6. And we consider sufficiently all kinds of factors, such as conductance of tube, leak and deflate of system, pump speed, ionization and re - ionization of high - energy ion taking place in the process of transmission. furthermore, we take two ways to discuss pressure distribution of cell

    在系統軸線上壓力分佈分析過程中，綜合考慮了管道的流導、系統的漏氣和放氣、泵的抽速、高能離子在管道內漂移過程中發生的電離和再電離等因素的影響。
  7. The result of numerical simulation indicated the tradeoff of breakdown voltage and on - resistance. the selection of structure prefer the thicker buried oxide layer and the thicker soi layer and the shorter drift length when the breakdown was happened at the interface of soi and buried oxide layer

    模擬結果表明，擊穿電壓與導通電阻存在明顯折衷關系，因此在選擇器件結構時要選擇埋氧層厚度大，漂移區濃度高，在保證擊穿發生在縱向的情況下，漂移區長度越小越好。
  8. Silicon carbide is becoming the most promising semiconductor material for high temperature, high frequency and high power devices because of its superior properties such as wide band gap, high breakdown field, high electronics saturation drift velocity, and high thermal conductivity

    Sic材料由於具有寬禁帶、高臨界擊穿電場、高飽和電子漂移速度、較大的熱導率等優良特性，因此成為製作高溫、高頻、大功率器件的理想半導體材料。
  9. Featured by wide band gap, high breakage electric field, high electron mobility, low dielectric constant, strong irradiation proof and excellent chemical stability, silicon carbide ( sic ), viewed as one of the most promising wide band gap semiconductors, is widely utilized in optoelectronic devices, high frequency and large power, high temperature electronic devices

    被譽為最有潛力的寬禁帶半導體材料一sic ，因其具有禁帶寬度大、擊穿電場高、熱導率大、電子飽和漂移速度高、介電常數小、抗輻射能力強、良好的化學穩定性等優異的特性，被廣泛地應用於光電器件、高頻大功率、高溫電子器件。
  10. This work was supported by the state science and technology ministry of p. r. china under the contact no. g20000683 - 06, and by the national natural science foundation of p. r. china under grant no. 60046001. gallium nitride is one of the 3rd generation semiconductor materials. from 1990 ' s, gan has attracted more and more attention and advanced rapidly, mainly due to its direct transition, wide band gap ( ~ 3. 4ev ) and other excellent characters

    Gan是直接躍遷的寬帶隙材料，具有禁帶寬度大（ 3 . 4ev ，遠大於si的1 . 12ev ，也大於sic的3 . 0ev ） ，電子漂移飽和速度高，介電常數小，導熱性能好等特點，在光電子器件和電子器件領域有著廣泛的應用前景。
  11. Abstract : the attitude error performance of electrostatic gyro should be understood and the relevant error equations must be set up in order to ensure the navigation precision of esgm. the relation between the navigation errors and the attitude errors of gyro was derived by use of spherical triangle. the simulation results show that the temporal performances of the longitudinal and distance errors which come from the initial alignment errors are periodically variational. they also show that the longitudinal and distance errors resulted from gyro drifts are not convergent in time. thus, the effects of initial alignment errors and gyro drifts can not be neglected and must be estimated and compensated

    文摘:為了保證靜電監控器的導航定位精度，需要了解靜電陀螺的姿態誤差特性，建立相應的誤差方程.本文採用球面三角形原理推導了導航定位誤差與陀螺姿態誤差的關系式.模擬結果表明，由初始定向誤差引起的經度誤差和距離誤差的時間特性是周期變化的；由陀螺漂移引起的經度誤差和距離誤差是隨時間發散的.因此，初始定向誤差和陀螺漂移的影響不能忽略，必須對其進行估計和補償
  12. The basic principle, main properties, typical parameters, technical characteristics and general situation of klystron are introduced. the electron beam prebunching in the modulated cavity and shift tube of relativistic klystron amplifer ( rka ) is studied analytically, a self - consistent equation of radiation generated by the prebunched electron beam in the radiation cavity is derived using the field method of particle ? wave interaction instead of the electrical circuit method, and in terms of it, the gain in the linear regime calculated, a field analysis method is proposed. the theory analysis shows that the characteristic parameters, such as resonance frequency, real part of gap - impedance, external quality fadtor in all kinds of klystron output circuits including single - beam, multi - beam, single - gap, multi - gap, single - beammulti - gap, multi - beam multi - gap klystron output circuit, can be calculated by the field analysis method

    本文系統的介紹了速調管的工作原理、主要特點、發展概況、主要性能指標和技術特點，解析的研究了電子束在相對論速調管放大器的調制腔和漂移管中的預群聚;用粒子波互作用的場方法導出了在輻射腔中預群聚電子束產生輻射的自洽方程，同時對線性區的增益進行了計算。理論分析表明，場分析法可用於計算單注單間隙、多注多間隙、單注多間隙和多注多間隙速調管輸出迴路的諧振頻率、間隙阻抗實部和外觀品質因數等特性參數。
  13. The accurate calculation of the input voltage and the compensation for the dc - offset error and the variation of the stator resistance are important factors in practical implementation of the integration since they can cause a drift in the stator flux linkage trajectory and furthermore deteriorate the quality of torque control

    因此，輸入電壓的準確計算、直流漂移量的補償以及定子電阻變化的補償都是影響積分計算準確性的重要因素，這些誤差會導致定子磁鏈軌跡的偏移，進而降低系統轉矩控制的性能。
  14. Less drift will result from making c with a few parallel caps, to reduce the heating effect of the oscillating current when spread out over a larger plate area

    當分為一個更大的平面面積時，通過電容c和一些電容並聯將導致更少的漂移，這樣來減少振蕩電流的熱效應。
  15. As one of the several models to improve the drift - diffusion model, the hydrodynamic model plays an increasingly important role in simulating the behavior of the charge carrier in sub - micron semiconductor devices because it can exhibit velocity overshoot and ballistic effects for which are not accounted the classical drift - diffusion model

    漂移擴散模型自上世紀五十年代初一出現，就得到了人們的廣泛關注。但隨著微電子技術的發展，它不能很好的解釋半導體中的有些現象，流體動力學模型就應運而生了。
  16. In simulations, all important phenomena, such as non - neutral sheath widening near cathode, cathode electron emitting, current channel migrating to the load side of the plasma, ion accelerating toward cathode and magnetic insulation of cathode emitting electrons etc, have been observed and depict the internal physics of this device. also presented is the influence of cathode emitted electrons on phenomena in the conduction processes of pegs. the simulation results show, without cathode emitted electrons, rapid magnetic field penetration takes place only in region near the cathode, with cathode emitted electrons, magnetic field penetration takes place in all plasma region

    診斷發現了陰極表面非中性鞘層的形成、陰極電子發射、電流通道的漂移、等離子體離子加速以及陰極電子磁隔離等物理現象，揭示了這一斷路器件的物理機制；分析了陰極電子對peos導通過程中的物理現象的影響，模擬結果顯示：忽略陰極電子作用，磁場滲透現象主要出現在陰極表面區域，考慮陰極電子作用，磁場滲透現象出現在整個等離子體區域。
  17. The traditional level measuring methods can n ' t meet our demand because the subjective investigated is in such a poor systemic condition that the temperature is a little high and there ' s so many mill dust and steam there. in this article we perform systemic discuss and research against the dynamic level measuring method under special working condition on the basis of analyzing kinds of level measuring technique in and abroad. first we establish the pressure distribution mathematic model in storage bin and then deduce the mathematic relation between level height and the uniform stress on the bottom of the bin and designed a resistance compressive stress sensor used for the special condition and put forward a resoivement according to its zero excursion existing in practical use

    由於本研究系統被測對象環境溫度較高且潮濕，同時料倉中有大量粉塵及蒸汽，因此傳統的料位檢測方法不能滿足本測試要求。本文在分析國內外各種物位檢測技術的基礎上，針對特殊工況下動態物料高度的檢測進行了系統的探討與研究。首先建立了料倉中的壓力分佈數學模型，推導出料位高度與倉底均布壓力間的數學關系式，並據此設計了中溫電阻應變式壓力傳感器，同時對它在實際應用中存在的零點漂移等問題提出了改進措施，提高了傳感器性能，解決了上述特殊工況下動態物料檢測的技術難題。
  18. Conduction of electricity in solids consists of the drift of electrons that have been temporarily detached from the parent atoms

    固體中電的傳導是暫時離開母原子的電子的漂移所致。
  19. It was found from the experiment that, with the increasing of substrate temperature, there were more oxygen vacancies in the films, which lead the conductance of the sample become larger, and the absorb edge of zno thin films shifted toward higher wavelength ; with increasing of ar : o2 ratio, there were lesser oxygen vacancies in the films, which lead the absorb edge of zno thin films shifted toward lower wavelength

    實驗還發現，隨著襯底溫度的升高，薄膜中產生的氧空位將會增多，使得zno薄膜的電導逐漸增大，而且其紫外透射吸收截止邊帶向高波長方向漂移；隨著氬氧比例的增加，薄膜中的氧缺陷相對減少，薄膜的透射吸收截止邊向低波長方向漂移。
  20. It was found from the experiment that, with the increasing of substrate temperature, there were more oxygen vacancies in the films, which lead the conductance of the sample become larger, and the absorb edge of ito thin films shifted toward lower wavelength ; with increasing of ar : o2 ratio, there were lesser oxygen vacancies in the films, which lead the absorb edge of ito thin films shifted toward lower wavelength

    實驗還發現，在一定的溫度范圍內隨著襯底溫度的升高，薄膜中產生的氧空位將會增多，使得ito薄膜的電導逐漸增大，而且其紫外透射吸收截止邊帶向短波長方向漂移；隨著氬氧比例的增加，薄膜中的氧缺陷相對減少，薄膜的透射吸收截止邊向低波長方向漂移。
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