漏極電壓 的英文怎麼說

中文拼音 [lóujídiànyā]
漏極電壓 英文
voltage, drain
  • 漏 : Ⅰ動詞1 （從孔或縫中滴下、透出或掉出） leak; drip 2 （泄漏） divulge; disclose; leak 3 （遺漏） le...
  • 極 : i 名詞1 （頂點; 盡頭） the utmost point; extreme 2 （地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 壓 : 壓構詞成分。
  • 電壓 : voltage; electric tension; electric voltage
  1. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高
  2. In gan hemt drain pulse current collapse experiments, drain current under pulse condition collapsed about 50 % than direct current condition and the pulse signal frequency affected little on current collapse. when gate voltage is small, the relationship between pulse width and drain current is i0 ( + t / 16 )

    在ganhemt漏極脈沖電流崩塌測試中，發現脈沖條件下漏極電流比直流時減小大約50 % ;脈沖信號頻率對電流崩塌效應影響較小;當柵壓較小時，隨著脈沖寬度的改變漏極電流按i0 （ + t / 16 ）的規律變化。
  3. A lcc multi - resonant ( mr ) network is added to the traditional three - level converters to realize zvs. the unique arrangement of a multi - resonant network results in absorption of all major parasitic components hi the resonant circuit, such as transistor output capacitance, diode junction capacitance and transformer leakage inductance, which can eliminate parasitic oscillation in the converter

    它的優點在於諧振電容吸收了開關管和續流二極體的結電容，諧振電感吸收了變壓器的漏感，使得開關管和續流二極體都能在軟開關的條件下完成導通和關斷過程，消除了電路中的寄生振蕩。
  4. The sample with low emitter efficiency has completed as the method of above. this lead to the greatly decrease of the reverse recovery time and the low reverse leakage and forward voltage, especially the excellent temperature character of the leakage. the test date shows that the samples reach the first class of international level

    本論文作者通過模擬測試，驗證了課題研究的理論設想，並設計製作了具有低陽極發射效率結構的高壓功率frd ，利用局域鉑摻雜和電子輻照相結合的壽命控制方式，實現器件反向恢復時間的極大減小，並且反向漏電流、軟度因子、正向壓降等關鍵參數也較理想，且具有極佳的漏電溫度特性，達到器件綜合性能的優良折衷，達到國際先進水平。
  5. The effects of the operation temperatures, gate voltages, drain - source voltages and magnetic field upon the characteristic of device are analyzed in detail. coulomb blockade and single electron tunneling are observed in the devices. 3

    詳細地分析了工作溫度、柵極電壓、漏源電壓和磁場對其特性的影響，觀測到明顯的庫侖阻塞效應和單電子隧穿效應，器件的工作溫度可達到77k以上。
  6. Small signal jfets work very well as low - leakage diodes by connecting drain & source together in log current - to - voltage converters and low leakage input protection

    在對數電流-電壓轉換器和低漏電流輸入保護電路中，通過連接小信號jfets的漏極和源極，可以使之作為低漏電流二極體很好的使用。
  7. Under high drain voltage condition, the results proved that channel electrons are easily ejected into gan buffer layer and be trapped to induce current collapse

    在大漏極電壓條件下，溝道電子易於注入到gan緩沖層中，並被緩沖層中的陷阱所俘獲，耗盡二維電子氣，從而導致電流崩塌效應。
  8. For low distortion, the drains ( or collectors ) of a differential amp " s front - end should be bootstrapped to the source ( or emitter ) so that the voltages on the part are not modulated by the input signal

    為了得到低失真，差分放大器前端的漏極（或集電極）應該被引導到源極（或射極） ，這樣埠電壓就不會被輸入信號調制了。
  9. Under a unified model of carrier transport over trap state established potential barrier at drain side, device degradation behavior such as asymmetric on - current recovery and threshold voltage degradation can be understood

    我們通過載流子在漏極附加陷阱態勢壘的輸運模型，解釋了器件在應力后出現的閾值電壓的退化現象和非對稱性開態電流恢復現象。
  10. The result of the test for dynamic breakdown characteristics reveal that breakdown voltage increases as the lengths of the pulses applied to the gate and drain electrodes increase. this could be mainly due to the influence of surface states

    Gaasmesfet動態擊穿特性測試結果表明， gaasmesfet的擊穿電壓隨柵極與漏極上所加脈沖電壓寬度的增大而增大，這主要是因為表面態的原因。
  11. By using phase shifting control between right bridge leg and left bridge leg, the output cy cloconverter commutating while the bi - polarity three - state high frequency ac volage from the input cycloconveter is zero, . and commutation overlap of the output cycloconverter and polarity selection of the input voltage, the leakage inductance energy and the output filtering inductance current are naturally commutated, and zvs switching of the output cycloconverter are realized, the surge voltage and surge current of the output cycloconverters are overcome

    通過輸入周波變換器右橋臂相對左橋臂的移相，讓輸出周波變換器功率開關在輸入周波變換器輸出的高頻交流電壓為零期間進行換流，並藉助輸出周波變換器換流重疊和輸入電壓極性選擇，從而實現了變壓器漏感能量和輸出濾波電感電流的自然換流、輸出周波變換器的zvs開關，解決了輸出周波變換器固有的電壓過沖和環流問題。
  12. So the optium content of ceo2 is 0. 06mol % in this study. when the la2o3 content is 0. 04mol %, potential gradient is the highest, and improves about 57 %, voltage ratio is lower, leakage current is minmum

    當la _ 2o _ 3含量為0 . 04mol時，氧化鋅壓敏閥片的電位梯度達到極值，與不含la _ 2o _ 3的氧化鋅壓敏閥片相比提高約57 ，且壓比較小，漏電流最低。
  13. So the optium content of nd203 is 0. 04mol % in this study. when the ceo2 content is 0. 06mol %, potential gradient is maximum, improves about 30 %, voltage ratio is lower, and leakage current is the lowest

    當ceo _ 2含量為0 . 06mol時，氧化鋅壓敏閥片的電位梯度達到極值，比添加ceo _ 2前的電位梯度提高約30 ，且壓比較低，漏電流最小，因此本實驗ceo _ 2添加量的最佳值為0 . 06mol 。
  14. The performance of state - of - the art silicon pin diodes is now approaching the theoretical limits, and it is apparent that further advances in silicon technology are very difficult because of material properties

    傳統的sipin功率二極體由於si材料特性的局限性，很難實現開關速度、通態壓降和反向漏電流三者良好的折衷。
  15. Usually series mode is used in low frequency circuit while bypass mode is used in high frequency circuit, series mode micro - switch with cantilever structure is similar to an fet, when voltage is applied on gate, and the fet will be turned on between source and drain

    有靜電電壓作用在梁和底面電極時，梁發生偏轉，在源極和漏極之間實現導通，常用於自控和通信系統的信號通路空氣橋旁路開關主要用於微波段信號的通路。
  16. The results of experiment indicated that adding a appropriate amount of rare - earths oxide in zinc oxide varistor led to increase potential gradient greatly, decrease leakage current with voltage ratio no changed. when the nd2o3 content is 0. 04mol %, potential gradient of zinc oxide varistor is maximum, improves about 65 % compared with zinc oxide varistor no containing nd2o3, voltage ratio and leakage current are the lowest

    當nd _ 2o _ 3含量為0 . 04mol時，氧化鋅壓敏閥片的電位梯度達到極值，與不含nd _ 2o _ 3的氧化鋅壓敏閥片相比提高約65 ，且壓比最低，漏電流最小，因此本實驗nd _ 2o _ 3添加量的最佳值為0 . 04mol 。
  17. In view of the very small leakage currents in the blocking state ( reverse bias ) and the small voltage in the conducting state ( forward bias ) as compared to the operating voltage and currents of the circuit in which the diode is used, the i - v characteristics for the diode can be idealized

    與二極體的工作電流和電壓相比，在阻斷（截止）狀態下漏電流很小，在導通狀態下電壓比較小，因此二極體的電流-電壓（伏安）特性可以理想化。
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