漏極電導 的英文怎麼說

中文拼音 [lóujídiàndǎo]
漏極電導 英文
drain conductance
  • 漏 : Ⅰ動詞1 （從孔或縫中滴下、透出或掉出） leak; drip 2 （泄漏） divulge; disclose; leak 3 （遺漏） le...
  • 極 : i 名詞1 （頂點; 盡頭） the utmost point; extreme 2 （地球的南北兩端; 磁體的兩端; 電源或電器上電流...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  1. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高
  2. The main work of this thesis analyzes the organic static induction transistor ' s operational mechanism, and researchs the change of gate length, change of gate - drain distance and change of electric channel breadth for operational characteristics influence of organic static induction transistor

    本論文的主要工作是解析有機靜電感應三極體的工作機理，並研究了柵極長度變化、柵漏極間距變化和導電溝道的寬度變化對有機靜電感應三極體工作特性的影響。
  3. A lcc multi - resonant ( mr ) network is added to the traditional three - level converters to realize zvs. the unique arrangement of a multi - resonant network results in absorption of all major parasitic components hi the resonant circuit, such as transistor output capacitance, diode junction capacitance and transformer leakage inductance, which can eliminate parasitic oscillation in the converter

    它的優點在於諧振電容吸收了開關管和續流二極體的結電容，諧振電感吸收了變壓器的漏感，使得開關管和續流二極體都能在軟開關的條件下完成導通和關斷過程，消除了電路中的寄生振蕩。
  4. Under high drain voltage condition, the results proved that channel electrons are easily ejected into gan buffer layer and be trapped to induce current collapse

    在大漏極電壓條件下，溝道電子易於注入到gan緩沖層中，並被緩沖層中的陷阱所俘獲，耗盡二維電子氣，從而導致電流崩塌效應。
  5. For low distortion, the drains ( or collectors ) of a differential amp " s front - end should be bootstrapped to the source ( or emitter ) so that the voltages on the part are not modulated by the input signal

    為了得到低失真，差分放大器前端的漏極（或集電極）應該被引導到源極（或射極） ，這樣埠電壓就不會被輸入信號調制了。
  6. Organic - inorganic nanocomposite, which are the complex of inorganic nanopraticles with organic compound, is a popular study subject in nanoscale composite. the nanocomposite can not only take advantage of several advantage, but also produce new properties. in this thesis, taking account of the problems in electrorheological fluids such as high leakage current, low yield stress and stability, the pan - batio3 nanocomposite with different structure are prepared by in - situ complex technology and modified sol - gel method

    根據目前電流變液中出現的問題（如屈服應力不夠高，漏電流密度不夠低，穩定性不夠好等問題） ，基於聚苯胺有較高的熱穩定性，且密度又小，特別是聚苯胺的介電常數和電導率均可按需調整，此外，鈦酸鋇無機納米粒子作為一種無機鐵電體，在電場作用下具有自發極化的能力，一方面可以為體系提供高的介電常數，另一方面又可保證體系的絕緣性能。
  7. Usually series mode is used in low frequency circuit while bypass mode is used in high frequency circuit, series mode micro - switch with cantilever structure is similar to an fet, when voltage is applied on gate, and the fet will be turned on between source and drain

    有靜電電壓作用在梁和底面電極時，梁發生偏轉，在源極和漏極之間實現導通，常用於自控和通信系統的信號通路空氣橋旁路開關主要用於微波段信號的通路。
  8. Oxygen atoms in the air are known to actively react with the fresh gaas. it was observed that the ga - o bond is stronger than that of as - o and that ga atoms preferentially migrate towards the surface leaving vacancies behind in the subsurface region. this behavior can convert the subsurface layer into an as - enriched one

    本文分析了硫鈍化后源漏飽和電流減小的原因，認為gaas表面極易被空氣中的氧原子氧化，由於ga - o鍵比as - o鍵結合的更緊， ga原子優先向表面移動，這導致亞表面層成為富as層。
  9. As far as i know, the getter shape doesn ' t affect thesound, but if the getter flash got into the wrong places, it couldcause leakage and noise

    據我所知，屏極的形狀並不影響聲音，但如果屏極在封裝內發生了位移，則肯定會導致漏電和噪音。
  10. In view of the very small leakage currents in the blocking state ( reverse bias ) and the small voltage in the conducting state ( forward bias ) as compared to the operating voltage and currents of the circuit in which the diode is used, the i - v characteristics for the diode can be idealized

    與二極體的工作電流和電壓相比，在阻斷（截止）狀態下漏電流很小，在導通狀態下電壓比較小，因此二極體的電流-電壓（伏安）特性可以理想化。
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