漏電抗電壓 的英文怎麼說
中文拼音 [lóudiànkàngdiànyā]
漏電抗電壓
英文
leakage reactance voltage- 漏 : Ⅰ動詞1 （從孔或縫中滴下、透出或掉出） leak; drip 2 （泄漏） divulge; disclose; leak 3 （遺漏） le...
- 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
- 抗 : Ⅰ動詞1 （抵抗; 抵擋） resist; combat; fight 2 （拒絕; 抗拒） refuse; defy 3 （對等） contend with...
- 壓 : 壓構詞成分。
- 漏電 : leakage of electricity; leakage漏電保護 earth leakage protection; 漏電保護開關 earth leakage circ...
- 電壓 : voltage; electric tension; electric voltage
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Leakage reactance voltage
漏電抗電壓Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高It has certain fight impact, endure electric arc and good endure leakage of electricity, it is mainly apply to make insulation structural of low voltage of electrical equipment as well as daily use utensil accessory etc. product appearance submits granular
通過阻燃性能認證。具有一定的抗沖擊性耐電弧性和良好的耐漏電性，適用於製造低壓電器絕緣結構件以及日用器皿配件等。產品形狀呈粒狀。Traditionally, the resolving - transformer consists of former windings and vice windings. but the resulting output voltage will have aberrance owing to the existence of winding resistors and reactance leakage
傳統上的旋轉變壓器常採用原副線圈來組成，由於線圈電阻和漏抗的存在，將使最終輸出電勢出現畸變。Transformers can reduce the bulk of the auxiliary power considerably by magnetics integration, for the primary axial fission winding can help integrate two transformers, and series connection with balancing reactor at the primary and with low - pass filter at the secondary can help integrate several magnetics
變壓器的一次繞組軸向分裂，可實現兩臺變壓器集成;變壓器的漏抗必然存在，且在一次側與平衡電抗器串聯，在二次側與濾波電容串聯，可以實現幾種磁性器件的集成。因此，變壓器採取磁集成技術將大大降低輔助電源的體積。Soi hvic ( silicon on insulator high voltage integrated circuit ) is the mainstream and trend of the power integrated circuit ( pic ) due to the improved no latch - up, reduced leakage current, perfect irradiation hardness, and improved insulation
Soi （ silicononinsulator ）高壓集成電路具有無閂鎖、漏電流小、抗輻射、隔離性能好等優點，已成為功率集成電路（ powerintegratedcircuit ）的重要發展方向。The machine contain main functions of four testing apparatus, it can automatic test leaking current, grounding electric resistance, dielectric intensity, resting voltage and print testing data
詳細說明具備四種測試儀的全部主要技術性能，可連續自動測試漏電流、接地阻抗、電介質強度、剩餘電壓。可列印測試數據。分享友人