漏電電流 的英文怎麼說

中文拼音 [lóudiàndiànliú]
漏電電流 英文
leakage current
  • : Ⅰ動詞1 (從孔或縫中滴下、透出或掉出) leak; drip 2 (泄漏) divulge; disclose; leak 3 (遺漏) le...
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : Ⅰ動1 (液體移動; 流動) flow 2 (移動不定) drift; move; wander 3 (流傳; 傳播) spread 4 (向壞...
  • 漏電 : leakage of electricity; leakage漏電保護 earth leakage protection; 漏電保護開關 earth leakage circ...
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  1. Investigating the relationship between the resistive component of the fundamental frequency current and that of the 3rd harmonic current by experimentation with real movs

    通過試驗研究了moa泄中基波阻性和三次諧波阻性之間的關系。
  2. In applications where high impedances and very low currents are involved a guard ring may be used to minimize the effects of low insulation resistance

    保護環用在那些高阻抗或非常微弱的路中,用於減輕因絕緣阻不夠高而產生的()問題。
  3. Research on detection method of moa resistence leakage current based on harmonic analysis

    阻性泄測量方法研究
  4. Hh silc is found to have a more pronounced transient effect

    熱空穴應力導致的具有更加顯著的瞬態特性。
  5. Verification regulation of leakage current instrument and meter

    測量儀
  6. Measuring of leakage current

    漏電電流測定
  7. To lower the characteristic capacitance and leakage currents of reed relays ( and, less commonly, electromechanical relays ), an electrostatic shield is sometimes added between the switches and the coil

    為降低干簧繼器(以及並不那麼常見的機式繼器)的特徵容和,有時會在開關和線圈之間增加一層靜屏蔽。
  8. Low - leakage - current service cord

    用戶軟線
  9. According to the academic analysis of insulation, this paper expatiates the examination ways of electric power insulates, such as shaking - watch, the direct current withstand voltage and measure leakage current, alternating current withstand voltage, measure dielectric loss angle, on - line inspections etc., to be used to direct the installations and debugging of electrical engineering

    通過絕緣介質的理論分析,闡述了氣設備絕緣檢查通常的搖表檢查,直耐壓及的測量,交工頻耐壓,介質損失角的測量,在線檢測等方法,以用來指導氣工程施工的安裝和調試。
  10. The emphases of our research works are as follows : under ultra - low temperature ( about 0. 236k ) conditions, how the frequency and power of the saw and the source drain voltage influence the acoustic current ; and the relationship between the source drain current and the split - gate voltage ; and how to find the cut off voltage of the quasi - 1d electron channel ; and also the frequency character of the idt in the saw parts

    研究的重點為,在甚低溫( 0 . 236k )下,通過實驗研究表面聲波的頻率和功率,源偏壓等因素對聲的影響;研究準一維子通道中不同源與分裂門負偏壓的關系,以找到分裂門的鉗斷點壓;以及研究聲表面器件叉指換能器的頻率特性等。
  11. Capacitive leakage current

  12. ( 2 ) each state of the total switching period has been studied in detail, in which the voltage of block capacitor and current of leakage inductance of main transformer and keeping time of each state have been discussed, then the condition of zero voltage switching is attained, which gives theory guidance for setting reasonable dead time, finally, the possibility of zero voltage switching is proved by simulation of saber software

    ( 2 )對不對稱半橋在一個完整的開關周期內各個狀態分析,描述了隔直壓和變壓器的變化規律,各個狀態的持,然後得出實現zvs的條件,從而為設置合理的死區時間提供了理論指導,最後用saber軟體進行了模擬,驗證了零壓開關實現的可能性。
  13. Quasi - static capacitance has been measured, when drain voltage is 0v, and gate voltage changes from ? 5v to 0v, the surface peak

    採用應力測試方法,獲得了algan / ganhemt隨時間的變化。
  14. We discussed the influence of channel - length modulation effect and dibl effect to temperature behavior of source - drain current, gave a expressions for studying the temperature characteristic of source - drain current, and deduced a ztc point expression

    研究了溝長調制效應和致勢壘降低效應對溫度特性的影響,給出了一個用於研究溫度特性的公式;並推導了短溝道most的ztc點公式。
  15. Standard test method for measuring transistor and diode leakage currents metric

    測量晶體管和二極的標準試驗方法
  16. Surface leakage current

    表面
  17. Fire hazard testing - part 5 - 3 : corrosion damage effects of fire effluent ; leakage - current and metal - loss test method

    著火危險試驗.第5 - 3部分:燃燒廢氣的腐蝕破壞效應.和金屬損失試驗方法
  18. The guard pathways of the matrix cards extend driven guard of the smus to the duts to eliminate the effects of leakage current

    矩陣卡的保護通路將smu的驅動信號延伸到了dut ,消除了的影響。
  19. Considering the unsymmetrical distribution of interface states induced by hot - carrier effects along the channel, the quasi - two - dimensional analysis methods are used to deduced the drain current, threshold voltage and electrical field in channel after hot - carrier degradation and the theoretical results are fully verified with the experimental data and m1ntmos6. 0 simulation output. the degradations of device output conductance, subthreshold conduction and rf characteristics are also analyzed

    針對mos器件熱載子退化所引入的界面態,根據其沿溝道非均勻分佈的模型,採用準二維分析方法對退化后器件的、閾值壓和飽和區溝道場作了詳細的理論推導,並與實驗結果和器件二維數值模擬軟體minimos6 . 0的計算結果進行了驗證比較。
  20. We probed into the most source - drain resistance and its temperature behavior particularly. the result of calculation indicated that the attenuation of source - drain current caused by the source - drain resistance increased when temperature increased

    對寄生的源串聯阻及其溫度特性進行了詳細探討,計算結果表明,源串聯阻給造成的衰減在溫度升高后變得很大。
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