激子 的英文怎麼說

中文拼音 [jīzi]
激子 英文
exciton激子超導體 excitonic superconductor
  • 激 : Ⅰ動詞1 （水因受到阻礙或震蕩而向上涌） swash; surge; dash 2 （冷水突然刺激身體使得病） fall ill fr...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  1. Exciton is electron-hole pair held together by their mutual coulomb interaction.

    激子就是由電子和空穴在相互間的庫侖力作用下，相互維持在一起的電子--空穴對。
  2. Exciton - phonon coupling of nn3 center in heavily nitrogen doped gap

    3束縛激子與聲子的耦合
  3. Exciton decay in zncdse qw cdse qd

    量子點復合結構中的激子衰減
  4. Effect of a magnetic field and an impurity on the low - lying energy spectra of an exciton

    磁場和雜質對激子低能譜的效應
  5. Bound exciton state

    束縛激子態
  6. The exciton lifetime in quantum well is up to 1. 8 ps under the thickness of znse barrier layer lonm

    在znse隔離層厚度10nm時，阱中的激子壽命為1 . 8ps 。
  7. However, with thickness of znse barrier increasing, mechanism of the exciton transference process changed

    隨著隔離層厚度的增加，激子轉移過程的機理發生變化。
  8. Effects of hydrogenic donor impurity position on the binding energy of a bound exciton in - nitrides quantum dots

    族氮化物量子點中類氫施主雜質位置對束縛激子結合能的影響
  9. The exciton - phonon coupling in cdse qds and its wetting layer were investigated by pl dependent of temperature

    利用變溫實驗研究了在量子點與其浸潤層中激子與聲子耦合現象。
  10. The isoelectronic system of gap : n has been investigated extensively in the dilute limit since 1965. thomas et al identified that a series of sharp emission lines in gap : n were due to the recombinations of excitons bound to either isolated nitrogen centers or various nitrogen pair centers

    這些譜線來自於等電子雜質n形成的束縛激子態（孤立n中心和nn _ i對）輻射復合產生的零聲子線及其聲子伴線。
  11. If you are menstruating ( possible stimulation of endometrial activity )

    如果你正處于月經期（可能會刺激子宮內膜運動） 。
  12. The uv - visible spectral evolution with particle radium was explained by exciton - coupling theory, it suggested that the change of crystal polymorphs was induced by nanofication - treatment. photoinduced discharge experiments showed a trend that the higher photosensitivity was corresponding to the smaller particle radium ( eg

    利用激子偶合理論成功地解釋了納米化對酞菁氧鈦的uv - vis吸收光譜的影響，證明納米化改變了酞菁氧鈦的晶型。
  13. So we figured that the influence of the electron - electron interactions must be considered in our work. added an electron - electron interaction ( up to the fourth neighbor ) term to the baranowski - buttner - voit ( bbv ) model for polyaniline, we carried out a self - consistent - variation calculation for an biexciton in the pernigranlilne - base polymer, in order to confirm the model hamiltonian. the results showed that two peaks ( near l. oev and 1. 5ev ) appeared in the calculated optical absorption, besides the reproduced electronic structure, bond order wave ( bow ) and ring - torsion angles

    發現引入電子?電子相互作用后，聚苯胺靜態激子的性質受到影響，該聚合物的鍵序波、芳環扭角和電子中文摘要結構發生了變化，而且在理論吸收譜的低能端出現了明顯的二特徵吸收峰（ 1 . 0ev和1 . 5ev附近） ，這一結果與實驗數據很好的吻合，從而這一點表明我們所考慮的因素是合理的。
  14. The enthalpy change on dsc curve suggests that the transition is one from low - ordered state to a higher - ordered state. a stacking mood that the 4 - trifluoro - methyl - 2, 3, 5, 6 - tetrafluorophenylmserts in between two perylene - macrocycles is confirmed by theoretical quantum calculation, such an insertion effect leads to the inversion of ( 0, 0 ) and ( 0, 1 ) absorption features under low temperature and the dramatic decrease of exciton coupling, which contributes to the spectral similarity in solution and the solid state

    量子化學的計算結果支持氟取代的苯環嵌入兩個相鄰的?環之間的分子堆砌方式，使得在常溫到150左右f - ptcdi固體薄膜的紫外-可見吸收光譜的（ 0 ， 0 ）和（ 0 ， 1 ）性狀的強度對比發生「反轉」 ；氟取代苯環的嵌入大大降低激子耦合，使固體吸收光譜性狀與溶液類似。
  15. Zinc oxide ( zno ) is a wide band - gap semiconductor, 3. 37 ev at room temperature, with the high exciton binding energy of 60 mev

    Zno是一種寬帶隙半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  16. Using a simple variation - fitting method ， the exciton binding energies of a sawtooth - shaped quantum well are calculated as a function of an electric field ， and the explanation of the results is also given

    採用一種變分擬合的簡單方法計算了電場下鋸齒型多量子阱的激子結合能，對計算結果給出了合理的解釋
  17. Dongxu zhao ( condensed matter physics ) directed by prof. dezhen shen and prof. yichun liu zinc oxide ( zno ) is a wide band - gap semiconductor ( 3. 37 ev at room temperature ) with the high exciton binding energy of 60 mev

    = zno是一種寬帶隙的半導體材料，室溫下它的能隙寬度為3 . 37ev ，激子束縛能高達60mev 。
  18. In low - dimension structure, the exciton binding energy will be lager than bulk material because of quantum effects, so excitons play an important role in optical characteristics of low - dimension zno

    在低維結構中，由於量子限制效應，激子束縛能會變得更大，因而在低維zno材料中，激子發光在其光學特性中起著舉足輕重的作用。
  19. Due to the large exciton binding energy of 60mev, which ensures the high efficient excitonic emission at room temperature, it is regarded as one of the most promising materials for fabricating efficient ultraviolet ( uv ) and blue light emitting devices

    由於氧化鋅具有較高的激子束縛能（ 60mev ） ，保證了其在室溫下較強的激子發光，因而被認為是製作紫外半導體激光器的合適材料。
  20. Zinc oxide ( zno ) is an important wide band gap ( eg = 3. 37ev ) semiconductor materials, its exciton binding energy is 60mev. these characters make it is expected to be applied in the ultraviolet optoelectronic devices which can be operated at room temperature

    氧化鋅（ zno ）是一種重要的寬禁帶（ eg = 3 . 37ev ）半導體材料，其激子束縛能高達60mev ，在室溫紫外光電器件方面有巨大的應用潛力。
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