濺射射束 的英文怎麼說

中文拼音 [jiànshèshèshù]
濺射射束 英文
sputtered beam
  • 濺 : 動詞（液體受沖擊向四外射出） splash; spatter
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 束 : Ⅰ動詞1 （捆; 系） bind; tie 2 （控制; 約束）control; restrain Ⅱ量詞（用於捆在一起的東西） bundle;...
  1. We prepare the si - sio2 and ge - sio2 thin film by using the dual ion beam co - sputtering method and the rf co - sputtering technique respectively, adjusting the substrate temperature ( ts ) and the annealing temperature ( ta ). then we analysis the structure of the thin film by using the xrd and tem

    論文採用雙離子束濺射和射頻磁控濺射沉積技術，通過改變薄膜沉積過程中基片溫度（ t _ s ）以及薄膜制備完成後退火溫度（ t _ a ）分別制備了si - sio _ 2和ge - sio _ 2薄膜。
  2. In this paper, we reported the structural and luminescent properties of si - based oxide films containing semiconductor si, ge or metal al powders prepared by a dual - ion - beam co - sputtering method ( si - sio2 films and al - si - sio2 films ) or rf magnetron sputtering technique ( ge - sio2 films ), and analyze the pl and el mechanism. 1. the composite films of si - sio2 films were prepared by dual ion beam co - sputtering method from a composite target in argon atmosphere

    我們利用雙離子束共濺射和射頻磁控共濺射技術制備了一系列含有半導體si 、 ge顆粒及金屬顆粒al的薄膜，即si - sio _ 2薄膜、 ge - sio _ 2薄膜和al - si - sio _ 2薄膜，分別對它們的結構、光吸收以及發光性質進行了研究。
  3. After 40 hour irradiation time, about 7 ci of radioactive isotope 64cu was produced via 63cu ( n, y ) 64cu reaction. after simple disposal, the irradiated copper sample was installed in the high - intesity ion sputter source on the hi - 13 tandem accelerator. then 64cu ions extracted from the high - intesity ion sputter source and injected into the tandem accelerator, 64cu ions can be accelerated to an energy of 80 mev and formed the off - line rnb since natural

    S ）的熱中於通量下，經過34個半衰期輻照，通過『 u … ， y ）生成放射性l司位素『 cll ，然後將放射性銅靶錐注入串列加速器強流濺射離于源中，引出mcll負離于，經刁串列加速器加速而得到能量為80mcv的離線放射性核束「 cll叭。
  4. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用離子束增強沉積設備，在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時，用氬、氫混合束對沉積膜作高劑量的離子束轟擊，使得被氬離子轟擊后斷鍵的氧化釩分子，再被注入氫降價，然後經適當的退火，成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜（國外報道值為2 - 3 ） ，並研製了單元懸空結構探測器和8 1 ， 16 1線性陣列。
  5. Property comparison of optical thin films prepared by e - beam, ion assisted deposition and ion beam sputtering

    離子輔助和離子束濺射三種工藝對光學薄膜性能的影響
  6. A control system for the thickness of ion beam sputter ( ibs ) coating is introduced in this paper. the basic principle of ibs coating machine is discussed. this paper also gives the scheme of hardware and sofeware

    本文介紹了離子束濺射鍍膜機膜厚控制的一種實用的系統，文中論述了離子束濺射鍍膜機的工作原理及鍍膜厚度控制系統的硬、軟體的實現方案。
  7. Abstract : based on the splashing mechanics microeffect ， this paper introduced the principle of ion beam removal machining it analysed the influenced factors of production efficiency ， studied the structure and working principle of the device of ion beam removal machining

    文摘:從離子束濺射的微觀力效應出發，介紹了離子束去除加工的原理，分析了影響加工效率的因素，並對加工裝置的結構及工作原理進行了探討。
  8. The influence of depositing condition on the depositing rate and the structure of the films were studied by the aid of tem and xrd. when the temperature ( ts < 450, ta < 800 ) is low, the structure of the samples is still amorphous. the majority content of the sample is sio 90 by the aid of xps

    利用雙離子束濺射沉積技術，通過共濺射方法制備了si - sio _ 2薄膜，研究了沉積時間、工作氣壓p _ （ ar ） 、基片溫度等對沉積速率的影響，用tem和xrd分析了樣品的結構。
  9. In this thesis, we research the characters on the ion beam sputtering system, and prepare tiny films and cnx / tiny multilayers by ion beam sputtering. the best parameters of preparing cnx films are explored. we use the tiny films as template to promote the growth of cnx films

    本文對離子源的濺射特性進行了研究，採用離子束濺射法制備了tin _ y單層薄膜和cn _ x tin _ y多層薄膜，探索該法制備cn _ x薄膜的最佳工藝參數，並利用tin _ y薄膜為襯底以促進cn _ x薄膜的生長。
  10. The theory of ion - beam etching and ion sources are reviewed. the classification of ion - beam etching are introduced. according to the mechanism that ion sputtering leads to faceting, trenching, reflection and redeposition, some relative solutions are put forward

    綜合敘述了離子束刻蝕技術和離子源的工作原理，簡單介紹了離子束刻蝕的分類，闡述了離子束刻蝕的物理濺射效應導致的刻面，開槽，再沉積等現象的產生機理及解決辦法，分析了kaufman離子源進行ribe的可行性及出現的問題。
  11. Manufactures pressure sensors, transducers, load cells, accelerometers, force sensors and strain gages from stock. specialist in micro - miniaturization and applications of semiconductor, thin film, metallic foil and hybrid circuit technologies for the measurement of acceleration, force, and pressure in a multitude of environments

    -提供薄膜制備微粉制備真空冶金分子束外延磁控濺射化學氣相沉積電子束鍍膜激光鍍膜甩帶機磁控電弧爐空間環境模擬等設備
  12. Standard practice for approximate determination of current density of large - diameter ion beams for sputter depth profiling of solid surfaces

    固體表面濺射深度仿形加工用大直徑離子束的電流密度近似測定的標準規程
  13. With the development of thin film science and technology, various thin film preparation techniques developed rapidly, as a result, conventional so - called filming has developed from single vacuum evaporation to many new film preparation techniques, such as ion plating, sputtering, laser deposition, cvd, pecvd, mocvd, mbe, liquid growth, microwave and mtwecr, etc., of which vacuum evaporation is the common technology for thin film preparation, because it has the distinct advantage of high quality of film deposition, good control - ability of deposition rate and high versatility

    隨著薄膜科學與技術的發展，各種薄膜制備方法得到了迅速發展，傳統的所謂鍍膜，已從單一的真空蒸發發展到包括蒸鍍、離子鍍、濺射鍍膜、化學氣相沉積（ cvd ） 、 pecvd 、 mocvd 、分子束外延（ mbe ） 、液相生長、微波法及微波電子共旋（ mwecr ）等在內的成膜技術。其中電子束蒸發技術是一種常用的薄膜制備技術，它具有成膜質量高，速率可控性好，通用性強等優點。
  14. To study its properties and obtain high quality thin films, a variety of techniques have been used such as molecular beam epitaxy ( mbe ), metal organic chemical vapor deposition ( mocvd ), magnetron sputtering, pulsed laser deposition, to prepare zno thin films

    為了獲得高質量的氧化鋅薄膜材料，人們已採用分子束外延，有機化學汽相沉積，脈沖激光沉積，磁控濺射等各種技術來制備氧化鋅薄膜材料。
  15. This article briefly explains the basic principle of coherent jet technology, and contrasts the characteristics of coherent jet with supersonic jet, accordingly the coherent jet technology has lower decay, longer jet distance and less absence of dimple etc, to form into a greater depth of penetration for any stand - off distance and ameliorate the effect of mixing round for liquid

    摘要簡述了集束射流技術的基本情況，與傳統超音速射流的特性進行了對比，從而看出集束射流具有發散小、噴射距離遠和噴濺少等特點，可以形成較大的穿透深度，改善了對鋼液的攪拌效果。
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