濺射工藝 的英文怎麼說

中文拼音 [jiànshègōngyì]
濺射工藝 英文
sputtering technology
  • 濺 : 動詞（液體受沖擊向四外射出） splash; spatter
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 工 : Ⅰ名詞1 （工人和工人階級） worker; workman; the working class 2 （工作; 生產勞動） work; labour 3 ...
  • 藝 : Ⅰ名詞1 （技能; 技術） skill 2 （藝術） art 3 [書面語] （準則） norm; standard; criterion4 [書面語...
  1. For vlsi, a plane surface may be approximated by depositing the interlevel dielectric by bias-sputter deposition (see section 9. 2. 4) or by using planarization.

    對于超大規模集成電路的平面狀表面，可以用偏置濺射淀積法的層間介質淀積（見924節）或用平面化工藝來近似獲得。
  2. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。
  3. Magnetron sputtering target source and sputtering procedure

    磁控濺射靶源設計及濺射工藝研究
  4. It was concluded that, the structure of ito thin films were influenced by many working parameters such as substrate temperature, oxygenous pressure and substrate and so on. it was indicated by sem spectra of zno thin films that the surface of the sample was leveled off, and the crystals were felsitic

    結果表明，對于ito薄膜，薄膜的光電性能薄膜結構的擇優取向性和與襯底溫度、濺射氧氣壓等工藝參數有很大關系， ito薄膜的sem表明，樣品表面較平整，且晶粒也比較緻密。
  5. Firstly, the tio2 thin films are deposited by dc reactive magnetron sputtering apparatus, and characterlized by n & k analyzer1200, x - ray diffraction spectroscopy ( xrd ), scanning electronic microscopy ( sem ), alpha - step500. and it was analyzed that the effect on performance and structure of films with the change of argon flow, total gas pressure, the substrate - to - target distance and temperature

    第一、應用穩定的直流磁控濺射設備制備tio2減反射薄膜並通過n & kanalyzer1200薄膜光學分析儀、 x射線衍射分析（ xrd ） 、掃描電子顯微鏡（ sem ） 、 alpha - step500型臺階儀等儀器對薄膜進行表徵，分析氧分壓、總氣壓、工作溫度、靶基距等制備工藝參數對薄膜性能結構的影響。
  6. In this study we focused on the pinning structure, and prepared [ pt / mn ] n multilayer by dc magnetron sputtering system instead of using co - sputtering, by which we wish to find a way to reduce the critical annealing temperature and shorten the annealing time

    在我們的課題研究中，我們著重對釘扎層進行了研究，工藝上採用了pt / mn多層膜而不是傳統的共濺射的方法。我們希望通過這種方式能夠發現一條降低臨界退火溫度的途徑，並且能夠縮短退火時間。
  7. The processes include the deposition of the waveguide film, the design and fabrication of the mask pattern, the lithography, the metal coating with a magnetic sputtering, the lift - off process for the metal mask, the dry deep etching by icp, the slicing of the wafer, the polishing of the cutting edge, the fiber - to - waveguide alignment and at last, the performance testing. some edg chip samples are fabricated

    對設計好的集成波導器件，本論文設計並試驗了器件的製作的全部工藝，包括波導薄膜的沉積，掩模的設計製作，光刻，濺射金屬薄膜，剝離法製作金屬掩模，干法深刻蝕，矽片切割，端面磨拋，波導對準和性能測試。
  8. Zno thin films were deposited on silicon ( si ) and glass substrate by reactive radio frequency sputtering ( rf ) technique with zinc target in the mixed gas of ar ando2, and used zno buffer improving the quality of zno thin film. the effects of parameters on the thickness, composition, texture, morphology, optical properties and electrical properties of zno thin films had been systematically investigated by means of xrd, xps, sem, afm, pl and hall test system

    採用x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、掃描電子顯微鏡（ sem ） 、原子力顯微鏡（ afm ） ，光致發光譜（ pl ）和霍爾效應測試技術系統研究了濺射工藝和退火工藝對zno薄膜的厚度、成分、織構、表面形貌、光學性能和電學性能的影響規律。
  9. In this paper, several thin films samples of vanadium oxide were got by high - frequency magnetron sputter with pure metal vanadium as sputter source

    本文以高純金屬釩作為靶材，採用磁控濺射工藝制備氧化釩薄膜。
  10. The tcr of the as - deposited films were about 20x10 - 6 /

    由優化的濺射工藝參數原位沉積的錳銅薄膜的tcr 。
  11. The surface morphologies of thin films were observed by using scan electron microscope ( sem ) and atomic force microscope ( afm ). based on grazing incidence x - ray diffraction ( gixrd ) equipment, we find that residual stress exist in magnetron sputtering plct film, in addition, the ferroelectric properties of plct thin films were measured by radiant premier lc type multifunctional ferroelectric properties test system

    利用廣角x射線衍射技術對不同濺射工藝下plct薄膜的相結構進行了研究;採用掃描電子顯微鏡（ sem ）和原子力顯微鏡（ afm ）分別觀察了薄膜的表面形貌;利用掠入射x射線衍射（ gixrd ）測量了薄膜的殘余應力。
  12. In order to optimize parameters of sputter - depositeing used to manufacture silicon - based tm films in the next step, the dissertation analyses and explains the difference between the two surfaces of sputtered tini film from sputtering factors

    為優化濺射工藝參數以用於后續的硅基tini薄膜制備，本文從工藝因素入手，對玻璃基濺射薄膜兩個表面的質量差異進行了分析，並給出合理解釋。
  13. The main research progresses of this thesis are shown as follow : 1. the a - c films with notably different surface micro - morphology were successfully fabricated by adjusting the sputtering process. there features change from smooth to a fractal - like structure with abounding holes and complicated gofers

    本論文的主要的研究工作進展如下: 1 .通過調控濺射工藝成功制備具有顯著差異的表面形貌的非晶碳薄膜，其表面特徵為從光滑平坦過渡到具有豐富的孔隙和極其復雜的皺褶的分形結構。
  14. Among these methods, magnetron sputtering is the most widely used technique for preparing thin films owing to its high deposition rate and good uniformity etc. in my experiment, zao films were prepared by dc magnetron sputtering in pure argon gas atmosphere using zno target mixed with al2o3 ( lwt %, 2wt %, 3wt %, 4wt % respectively ) and the films were figured by xrd, sem, xps, afm and ftir, uv photometer

    本研究課題以氧化鋅鋁靶為靶材，採用直流磁控濺射工藝在純氬氣氣氛中沉積zao薄膜。靶材中al _ 2o _ 3的摻雜比例分別為1 、 2 、 3 、 4 。用xrd 、 sem 、 xps 、 afm和紅外、紫外分光光度計等測試手段對沉積的薄膜進行了表徵。
  15. The results showed that the sputtering technical parameters have obviously influence on zn / o, the thickness and texture of zno thin film

    研究表明，磁控濺射工藝對zno薄膜的鋅氧配比、厚度和織構都有很大影響。
  16. The relationship between sputtering conditions and the depositional speed shows : with working pressure 1. 2 pa, sputtering power 180w, the depositional speed of tio2 thin film is 40nm / h, and increases with the increasing of sputtering power. it can be also founded that the depositional speed is nearly proportional to the working pressure : within the range of 0. 3pa to 1. 6pa, the depositional speed increases linearly with the increase of ar pressure. with the enhancement of the substrate ' s temperature of sputtering or annealing, the resulted thin films show a tendency of decreasing in thickness, and increasing in refractivity

    本實驗是採用磁控濺射方法，在不同的溫度下制備了tio _ 2薄膜，並對薄膜進行了不同溫度和時間的退火處理，通過原子力顯微鏡（ afm ） 、 x射線衍射（ xrd ） 、掃描電鏡（ sem ）等檢測手段對薄膜的表面形貌和組成結構進行了分析，結果如下： （ 1 ）濺射工藝條件與薄膜沉積速度的關系表明：採用1 . 2pa工作氣壓， 180w的射頻功率tio _ 2薄膜的沉積速率為40nm h ，並隨射頻功率的增加而提高，呈近似的線性關系，在0 . 3pa 1 . 6pa氣壓范圍中，氬氣壓強升高沉積速率迅速增加，濺射溫度提高和退火處理能使薄膜的厚度減小和折射率提高。
  17. By differential scanning calorimetry ( dsc ), respectively. without any supplementary method, a ti - rich alloy target ( ti - 48at % ni ) were used to enrich ti content in films during sputtering. as the first step, tini thin film is deposited on a glass substrate by sputtering, and annealed at 600

    採用絲材冷軋法，制備了75 m 、 90 m兩種厚度的tini形狀記憶薄膜，示差掃描量熱（ dsc ）法測得其馬氏體逆相變峰值溫度分別為35 、 109 ，在濺射工藝中，採用富ti的tini合金靶（ ti - 48at ni ）而不是其它成分補償措施，來增加tini薄膜中的ti含量。
  18. To satisfy the requirements of the wide applications of ito thin films, a lot of research efforts have been made on the preparation of ito films, and various manufacturing techniques such as evaporation, reactive electron evaporation d. c. and r. f. magnetron sputtering reactive thermal deposition and sol - gel process have been successfully developed

    為了滿足光電產業界對ito薄膜的強大需求， ito粉體的制備生產技術和薄膜的形成取得了很大的成效。目前，工業界主要是先將ito粉製成靶材，再利用直流磁控濺射工藝，在材料的表面形成ito薄膜。
  19. Among these methods, magnetron sputtering is the most widely used technique for preparing thin films, owing to its high deposition rate and good uniformity etc. ito films were prepared by rf and dc magnetron sputtering in pure argon gas atmosphere, using in2o3 and in target mixed with sno2 ( 10wt % ) and sn ( 7wt % ) respectively

    其中磁控濺射工藝具有沉積速率高均勻性好等優點而成為一種廣泛應用的成膜方法。本研究課題分別以氧化銦錫靶和銦錫合金靶為靶材，採用射頻磁控濺射和直流反應磁控濺射工藝在氬氣氣氛中沉積ito薄膜。靶材中sno _ 2和sn的摻雜重量比例分別為10和7 。
  20. In this paper, the research actuality status of zno thin film ’ s structural character, preparation methods and electrical - optical properties is summarized. the effect of sputtering parameters, annealing parameters and doped sb2o3 on the structure, optical absorption and electrical properties of zno thin film is studied by sem, xrd, xps, eds, uv - vis spectrophotometer, hall effect detector, four - point probe electric resistance measurement and direct - current impedance measurement etc. the results of sem, xrd and edx show that zno thin film possesses good processing stability

    本文在綜述zno薄膜的結構特性、制備方法和光電性能等現狀的基礎上，採用射頻磁控濺射技術制備了純和sb _ 2o _ 3摻雜的zno薄膜，採用sem 、臺階儀、 xrd 、 xps 、 uv - vis分光光度計分析、電阻儀、阻抗譜儀等儀器設備分別研究了濺射工藝參數、退火工藝參數和sb _ 2o _ 3摻雜對zno薄膜結構特性、光吸收性能和電學特性的影響規律。
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