濺射源 的英文怎麼說

中文拼音 [jiànshèyuán]
濺射源 英文
sputtering source
  • 濺 : 動詞（液體受沖擊向四外射出） splash; spatter
  • 射 : Ⅰ動詞1 （用推力或彈力送出） shoot; fire 2 （液體受到壓力迅速擠出） discharge in a jet 3 （放出） ...
  • 源 : 名詞1. （水流起頭的地方） source （of a river）; fountainhead 2. （來源） source; cause 3. （姓氏） a surname
  1. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。
  2. Magnetron sputtering target source and sputtering procedure

    磁控濺射靶源設計及濺射工藝研究
  3. After 40 hour irradiation time, about 7 ci of radioactive isotope 64cu was produced via 63cu ( n, y ) 64cu reaction. after simple disposal, the irradiated copper sample was installed in the high - intesity ion sputter source on the hi - 13 tandem accelerator. then 64cu ions extracted from the high - intesity ion sputter source and injected into the tandem accelerator, 64cu ions can be accelerated to an energy of 80 mev and formed the off - line rnb since natural

    S ）的熱中於通量下，經過34個半衰期輻照，通過『 u … ， y ）生成放射性l司位素『 cll ，然後將放射性銅靶錐注入串列加速器強流濺射離于源中，引出mcll負離于，經刁串列加速器加速而得到能量為80mcv的離線放射性核束「 cll叭。
  4. Middle frequency alternative power source lbz - 12 type

    中頻交流濺射電源lbz - 12型
  5. The testing technique and system of the newly developed, miniaturized sputtering ion pump with low pumping speed has been developed in accordance with the standards formulated by machine industry

    摘要本文介紹了小抽速微型濺射離子泵的性能測試系統和參考機械行業標準確定的測試方法，探討了測量結果誤差來源。
  6. In this thesis, we research the characters on the ion beam sputtering system, and prepare tiny films and cnx / tiny multilayers by ion beam sputtering. the best parameters of preparing cnx films are explored. we use the tiny films as template to promote the growth of cnx films

    本文對離子源的濺射特性進行了研究，採用離子束濺射法制備了tin _ y單層薄膜和cn _ x tin _ y多層薄膜，探索該法制備cn _ x薄膜的最佳工藝參數，並利用tin _ y薄膜為襯底以促進cn _ x薄膜的生長。
  7. The theory of ion - beam etching and ion sources are reviewed. the classification of ion - beam etching are introduced. according to the mechanism that ion sputtering leads to faceting, trenching, reflection and redeposition, some relative solutions are put forward

    綜合敘述了離子束刻蝕技術和離子源的工作原理，簡單介紹了離子束刻蝕的分類，闡述了離子束刻蝕的物理濺射效應導致的刻面，開槽，再沉積等現象的產生機理及解決辦法，分析了kaufman離子源進行ribe的可行性及出現的問題。
  8. Dlc and a - sic : h films were prepared by the rf glow discharge and the reactive sputtering method respectively. there were two reasons that we chose y rays, ultraviolet ( uv ) photons, and neutrons as radiation sources. one is that y rays, uv photons and neutrons irradiation are serious at outer space and / or nucleus irradiation enviromentthe other is that the study on y rays irradiation on the films is a new and an important directioaotherwisejirnited reports have been made of the investigation on the uv photonsjieutrons irradiation influences on these films

    本文分別採用射頻（ 13 . 56mhz ）等離子體cvd及射頻反應濺射方法制得了dlc及a - sic ： h薄膜。文中主要選擇y射線、紫外光及中子作為輻照源有兩方面的原因：一方面，在外層空間， y射線及紫外光輻射十分嚴重，而在核輻射環境下y射線及中子輻射也不可忽視；另一方面， y射線輻照這兩種薄膜完全是一項開創性的工作，同時國內外對紫外光子、中子與這兩種薄膜作用的研究也很少。
  9. It adopts the intermediate frequency power ; it not only can plate single films or multilayer membrane, such as titanium nitrides, titanium carbide, zirconium nitrides, chromium nitride, titanium, nickel, chromium and copper etc. but also can plate the ito, al2o3, sio2, tio2 and zro etc. furthermore, it can plate multilayer membrane after being equipped with multi - targets with top grade quality and fast speed, as well as advantages of other plating methods ; therefore it is one super - hard membrane equipment with excellent performance

    採用先進的中頻電源，濺射速度快，不但可以鍍制氮化鈦碳化鈦氮化鋯氮化鉻及鈦鎳鉻銅金銀等等單一膜層或復合膜層，而且可以鍍制銦錫合金ito氧化鋁al2o3二氧化硅sio2氧化鈦tio2氧化鋯zro等等膜層，另外其配置多靶可以鍍制多層膜，不但鍍制膜層細膩而且鍍制速度非常快，兼有其他鍍法的優點，所以是一種性能非常優良的鍍制超硬膜設備。
  10. Freedom from flicker, no spluttering and low glare. can thoroughly eliminate eye fatigue. free of liquid mercury, it is the best light source for environmental protection

    無閃爍、無濺射、低眩光，徹底消除眼睛疲勞，且不含液態汞。是綠色環保的首選光源。
  11. Reactive sputtering source

    反應濺射源
  12. Keywords : gims, ion source, anode layer, sputtering, tin, ion plating ， medium frequency, pulsed dc

    中文關鍵詞：氣離濺射、離子源、陽極層流、濺射、氮化鈦、離子鍍膜、中頻、脈沖直流。
  13. Simulation study on the starting method of medium - frequency power supply based on matlab

    磁控濺射中頻電源模擬研究
  14. The tbco amorphous films with and without cr underlayer had been successfully prepared onto glass substrate by magnetron sputtering method. the influence of the preparing conditions to the structure, coercivity and the perpendicular magnetic anisotropy ( pma ) of tbco films were investigated. and the origin of the pma in these films was studied

    採用磁控濺射法在玻璃基片上成功地制備了帶有和不帶有金屬cr底層的tbco非晶垂直磁化膜，研究了制備工藝對tbco薄膜結構、矯頑力、垂直磁各向異性的影響，並對tbco非晶垂直磁化膜的磁各向異性來源進行了研究。
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