熱散逸 的英文怎麼說
中文拼音 [rèsǎnyì]
熱散逸
英文
heat dissipation-
It may be caused by malfuncton of the temperature regulating center, the response of the center to a pyrogen, exposure to a very high environmental temperature, or impaired dissipation
其原因可能是體溫調節中樞功能紊亂、熱源刺刺激,氣溫過高或體溫逸散功能受損。The amount of heat flowing into the volume element exceeds the amount leaving it.
流進該體積單元的熱量超過它散逸的熱量。The rest escapes as sound waves, mechanical vibrations that heat the chromosphere, the middle layer of the sun's atmosphere.
其餘部分則以聲波即機械振動的形式散逸,它們加熱了太陽大氣的中間一層,即色球層。The higher the processing speed of computer, the more heat generating from cpu chip. if the heat ca n ' t be dissipatied effectively, the processing stability and speed will be decreased dramatically
計算機運行速度越高其晶元cpu發熱量越大,如果這些熱量得不到有效散逸,會制約晶元速度的進一步提高。The change is subtle but troubling because carbon dioxide and methane constitute the primary greenhouse gases in the atmosphere, returning heat to the earth instead of allowing it to escape into space
這項改變雖不易察覺,卻會造成問題,因二氧化碳與甲烷構成大氣中主要的溫室氣體,熱會被保留在地球而難以散逸到太空中。Moreover, a method for iterating thermal and magnetic analysis is put forward. in chapter 5, the distributed characteristics of eddy and temperature fields in induction heating process are simulation by fem respectively, including the distributions of eddy and temperature fields during the whole induction heating process, the influence of frequency and magnetic disperse, and the prediction of hardened depth
第五章:用ansys軟體對感應加熱過程中工件內渦流場、溫度場的一些基本問題進行模擬及分析,主要包括:加熱過程中工件渦流功率密度及溫度分佈規律;頻率與磁力線逸散對加熱效果的影響;同時對感應淬火淬硬層深度進行了模擬預測。Both hydrogen plasma and sinx thin film can effectively enhance the short circuit current density of mono and poly silicon solar cells, which cause the improvement of the absolute transfer efficiency about 0. 5 % ~ 2. 9 %. depositing sinx thin film followed by hydrogen plasma treatment will result in better passivation effect. the thickness of sinx thin film will decrease and the refractive index will increase after annealing
經過薄膜後退火處理發現,氮化硅薄膜經熱處理后厚度降低,折射率升高,但溫度達到1000oc時折射率急劇降低;沉積氨化硅薄膜后400oc退火可以促進氫擴散,提高鈍化效果;超過400oc后氫開始逸失,晶體硅材料中的少子壽命急劇下降; rtp (快速熱處理)處理所導致氫的逸失比常規退火處理顯著。分享友人