熱退火 的英文怎麼說

中文拼音 [tuìhuǒ]
熱退火 英文
thermal annealing
  • 退 : 動詞1 (向後移動) retreat; draw back; move back 2 (使向後移動) cause to move back; remove; wit...
  • : fire
  • 退火 : [冶金學] anneal; annealing; back-out
  1. There are many large - size air hammers, blast furnaces and costing equipment including all sorts of heat treatment equipment, costing equipment including all sorts of heat treatment equipments

    我們有大型空氣錘多臺,有足夠的冶煉高爐鑄造設施有淬退各種處理設備。
  2. In our company we have forging, costing and heat treatment workshops with advanced producing equipments. all the tasks which refused by the other companies will be done well here. there are many large - size air hammers, blast furnaces and costing equipment including all sorts of heats treatment equipment, costing equipment including all sorts of heat treatment equipments

    我公司下屬鍛造鑄造處理加工廠各一座,有先進的生產設備,可以接收其它部門不願承攬,甚至不敢承攬的艱巨任務,我們有大型的空氣錘和高爐冶煉鑄造設施和場地,有淬退各種處理設備。
  3. There are three main operations in the heat treatment of steel: hardening, tempering and annealing.

    鋼的處理操作主要有三種,即:淬,回退
  4. Implantation damage can be removed by annealing, i. e. heating in flowing gas.

    注入損傷可以通過退,即在流動空氣中處理來消除。
  5. On the basis of our previous forging equipment, our company has purchased another fast forging hydraulic equipment of 250 tons, with which we can forge various roughcast of special sections below 20 tons, as well as heat

    我公司在原有的鍛打設備外,又購進一臺250噸的快速鍛打液壓設備,可?根據客戶要求鍛造20噸以下的各種異型鋼材毛坯,還可?客戶提供退處理服務。
  6. The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed

    本文通過化學腐蝕、光學顯微鏡、掃描電鏡( sem ) 、透射電境( tem )等分析技術,對重摻砷硅單晶在單步退工藝和內吸雜退工藝中氧沉澱及誘生缺陷的形態,形核與處理溫度、時間的關系等進行了研究。
  7. Ht sub - factory : complete process of annealing, quenching, tempering, quenching and tempering, solution treatment etc

    處理廠:可完成退,正,回,調質,固溶處理等工藝
  8. Sanfeng electrical equipment co., ltd. is a professional manufacturer which products hf, solid hf, intermediate frequency, supersound frequency induction heating equipment, intermediate frequency overall anneal equipment and the installation of all - digital dc governor

    經營高頻焊管全套設備及其配件保定市三豐電器有限公司是專業生產高頻固態高頻中頻超音頻感應加設備中頻整體退設備和全數字直流調速裝置的專業廠家。
  9. Standard specification for maximum permissible thermal residual stress in annealed glass laboratory apparatus

    退的玻璃實驗室器皿中最大容許殘留應力
  10. When the two reactants were simply mixed by crush, they reacted violently and produced carbon spheres with a diameter of 50 - l00nm and sodium chloride ( nacl ) was encapsulated within the outer amorphous carbon shells, which could be confirmed by sem and tem. by annealing at 1400 ? to drive the encapsulated nacl away, hollow carbon spheres were left with a novel mesoporous structure, as presented in hrtem

    實驗中將兩種反應物通過直接擠壓混合后加反應,得到的無定型球狀碳材料經tem照片證實直徑為50 - 100納米,而且中間包裹氯化鈉( nacl )顆粒; xrd等結果顯示,高溫退併徹底清除nacl后形成的中空碳球已經部分石墨化。
  11. Tianjin fengdong heat treatment equipment co., ltd, sino - japanese joint venture, is a specialist firm to produce unicase series multi - purpose complete set, speria series pre - vacuum multi - purpose furnace complete set, uninite gas soft - nitriding furnace complete set, mesh - belt type continuous furnace, pit type bright annealing furnace and pit gas carbonitriding furnace complete set

    全套技術,生產滴注式unicase系列密封箱式多用爐成套設備, speria bbh型預抽真空多用爐成套設備,氣體軟氮化爐成套設備,網帶式連續爐,井式光亮退爐及井式氣體滲碳爐成套設備,並承接各種非標處理設備的設計和製造。
  12. Abstract : in this paper, pesent the development and trends in chemi cal component controlling, hot rolling and coiling processing, ferritic hot rollin g, trip steel processing, cool rolling, annealing and surface quality controlling f or deep drawing sgeet steels are analyzed and discussed

    文摘:分析討論了目前國內外在深沖用薄板生產中的成分控制、軋、捲曲工藝、鐵素體區軋制、 trip鋼生產、冷軋與退工藝以及鋼板表面質量控制方面的新進展和趨勢
  13. Study on the fabricating method the fe / al2o3 / fe mtj and co / al2o3 / feni mtj are prepared by ion - beam sputtering systems. the fexcu ( 1 - x ) granule films were evaporated directly using a high vacuum electron beam evaporation. some samples of granule films are annealed at 340c

    用高真空鍍膜機制備了fe _ xcu _ ( ( 1 - x ) )系列顆粒膜,並對部分膜做了加熱退火處理,樣品被加到340並且保溫2小時。
  14. It was reported that the secondary phase of mnas has been found in gaas substrate by mn - implanted and subsequent rapid thermal annealing

    有報道稱採用離子注入的方法將mn ~ +注入到gaas單晶襯底中,經過快速熱退火處理后,發現在晶體中生成了mnas第二相。
  15. With the development of vlsi ( very large scale integration ) and ulsi ( ultra large scale integration ), rtp ( rapid thermal process ), which consumes less time and less energy than classical thermal treatments, have been widely employed in semiconductor manufacturing. however, the most importance is that rtp is applied for defects engineering of silicon material. it is generally believed the rtf leads to the injection of additional vacancies into silicon wafer, and then a so - called magic denuded zone ( mdz ) in the near - surface region of cz silicon wafer was formed by controlling the vacancy distribution

    隨著大規模集成電路( vlsi )和超大規模集成電路的發展,節省時間、節省能量、容易控制的快速熱退火工藝在半導體器件製造工藝中得到了廣泛的應用,並且在硅材料的缺陷工程中發揮了特殊的作用,人們通過高溫快速處理在矽片中引入空位,並控制空位的分佈,進而形成了具有較強內吸雜能力的潔凈區。
  16. The n - type ps ( 80 ? cm - 100 ? cm ) had been immersed in the mixture of amine ( ( c2h5 ) 3n : c2h4 ( nh2 ) 2 = 3 : 2 ) for twenty minutes, then carried on rapid thermal oxidation ( rto ) through a quartz tube and oxidized in a floating oxygen ambience ( 0. 5 l / min ) at the temperature 400 for 30 s

    N型( 80 - 100 ? cm )矽片刻蝕后的多孔硅在胺液中浸泡20min ,然後在氧化爐中進行熱退火退溫度在400時, o _ 2流量為0 . 5l / min的條件下退30秒,在紫外燈照射下,所得ps發藍白光。
  17. In this paper, we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time. studied the different annealing condition dependence of the samples " structure, electrical and magnetic properties and the relation of the mn + forms and these properties

    本課題採用離子注入的方法將不同劑量的mn ~ +注入到非摻雜半絕緣( 100 ) gaas單晶襯底中,然後進行不同溫度和時間的快速熱退火處理,研究了不同的退條件對樣品注入層的晶體結構、電特性和磁特性的影響以及mn ~ +在樣品中的存在狀態與這些性質之間的關系。
  18. The development of solar cells is showing a tendency to improve efficiency and reduce cost. crystal silicon solar cells are considered the most promising cells in the future for their advantages, such as high efficiency, great stability, simple processing, and none - pollution

    主要工作包括三個部分:首先研究了不同溫度的熱退火對于矽片氧碳含量和少子壽命的影響,然後將處理過程應用於常規太陽電池的制備工藝,制出太陽電池。
  19. Thin - film area : the area to deposit " dielectric layer " and " metal layer " as the conducted or insulated films, also has cmp ( chemical - mechanical _ polish ) to planarize the chips on the wafer ' s surface and add high ( low ) temprature rtp ( rapid - thermal - process ) to the wafer

    薄膜區:專門沉積「介電層」 , 「金屬層」等導電或不導電薄膜的區域,併兼做晶圓表面器件之平坦化及高(低)溫快速熱退火製程。
  20. To achieve this aim, the effect of oxygen and carbon content on the solar cell conversion efficiency are studied in this thesis. three parts are studied in our work, firstly, the effect of annealing on the oxygen and carbon content and minor carrier lifetime of cz - si are studied, then put it into the process of solar cell and compare the capability of solar cell in two process

    作為該項研究的先期工作,首先以p型( 100 )太陽電池用直拉矽片為實驗樣品,摸索出熱退火的最佳處理溫度;然後用常規工藝制備了單晶硅太陽電池,測試效率;結果發現用經過處理的矽片襯底制備的太陽電池比用沒有經過處理的矽片襯底制備的太陽電池其效率有明顯改善。
分享友人