熱電子的 的英文怎麼說

中文拼音 [rèdiànzide]
熱電子的 英文
thermionic
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 的 : 4次方是 The fourth power of 2 is direction
  • 電子 : [物理學] [電學] electron
  1. First to heat pvc and sulfur together at a certain temperature, where the melted sulfur being a fine dehydrogenating agent, captured hydrogen from pvc bone chain and led to an electrially conductive polymer with conjugated electrons

    採用聚氯乙烯與單質硫在一定的溫度下加熱處理，在熔融狀態下的單質硫作為良好的脫氫氧化試劑，使聚氯乙烯主鏈脫氫形成具有共軛電子的導電聚合物。
  2. This project which is based on the demand of increasing the electron tube ’ s qualities totally and reducing the manufacture cost has done a large amount of investigative work as follows to improve and perfect the technologies for the important part of electron tube manufacture ? the grid surface processing : on the surface processing of the molybdenum grid, the primary purpose is to reduce thermionic emission and secondary electronic emission of the grid. by the constantly experiment and grabbling the different technology routes, we have successfully developed these new technologies on the tac and zrc electrophoresis and electroplating platinum black of the grid, and made its surface cladding quality very stable and reliable

    本課題是基於整體提高電子管的質量和降低生產成本的要求，對電子管生產中的重要部分? ?柵極的表面處理技術進行改進和完善，主要在以下方面進行了深入研究:在鉬柵極表面處理方面，主要為實現降低柵極的熱電子發射和二次電子發射，通過不同工藝路線的不斷試驗和摸索，成功開發出柵極電泳tac 、 zrc和電鍍鉑黑的新工藝，使柵極的塗覆質量穩定可靠。
  3. As our best known, this is the first experimental measurement of so high hot electron temperature at moderated intensity, pre - pulse free condition

    據我們所知，這是第一次報道在10 ~ （ 16 ） w cm ~ 2 、無預脈沖條件下，實驗測量到這么高的超熱電子溫度。
  4. From the scaling law about hot electron temperature given by vh model, the hot electron measured by experiment was reasonable, the temperature was higher than the temperature given by resonant absorption scaling law

    真空吸收是產生高能超熱電子的主導過程，從真空吸收給出的超熱電子溫度定標率來看，實驗中測量得到的超熱電子溫度是合理的。
  5. Influence of laser incidence angle on hot electrons generated in the interaction of ultrashort intense laser pulses with foil target

    激光入射角對靶面方向超熱電子發射的影響
  6. Data acquisition system based on vxi for icf

    實驗中超熱電子測量的數據採集系統
  7. Influnce of au cone on distribution of forward hot electrons

    金錐對靶背向超熱電子分佈的影響
  8. Fabrication of 10 inch field assistant hot - electron emission display

    10英寸場助熱電子發射顯示屏的製作
  9. The positive charge assisted tunneling current can be greatly reduced by using appropriate substrate hot electron injection technique

    利用襯底熱電子注入技術，正電荷輔助隧穿電流可被大大的減弱。
  10. The first step is the creation of trap centers in ultra - thin gate oxides by hot electron injection, and the second step is oxides breakdown induced by hole trapping

    首先注入的熱電子在超薄柵氧化層中產生陷阱中心，然後空穴陷入陷阱導致超薄柵氧擊穿。
  11. This dissertation is the first report that points out the cooperation of hot electron and hole is essential for the tddb of ultra - thin gate oxides

    首次提出了超薄柵氧化層的經時擊穿是由熱電子和空穴共同作用導致的新觀點。
  12. Thermodynamic entropy, in contrast, depends on the states of all the billions of atoms ( and their roaming electrons ) that make up each transistor

    與此相對照，熱力學熵的大小取決于數十億個構成電晶體的原子（及其漫遊電子）的狀態。
  13. We obtain that i ) with the increase of the phonon - pseudospin interaction and the thickness of the superlattice, the phase transition temperature of the superlattice will increase. ii ) the increase of the phonon - pseudospin interaction leads to the change of the number of the pyroelectric peaks in the temperature curve of pyroelectric coefficient and to the change of the pyroelectric coefficient

    研究發現，聲子與贗自旋的相互作用會影響鐵電超晶格熱電峰的數目以及熱電系數的溫度曲線的形態，而且聲子與贗自旋耦合作用的增強以及超晶格尺寸的增大都會使整個材料的相變溫度增加。
  14. In the experiment of the angular distribution of the hot electrons emission, three - peaks and double - peaks emission of the hot electrons resulted from the multi - acceleration mechanisms are observed in our experiments

    在超熱電子發射的角分佈實驗研究中，發現由幾種加速機制所支配的超熱電子的三峰發射和雙峰發射。
  15. The peak in the direction of the target normal is consistent with mat of predicted by the resonance absorption and another peak of hot electrons emission in the specular reflection direction is due to the multi - acceleration mechanisms. the hot electrons emission along the back - reflection direction is probably caused by the acceleration of the back - reflection laser, which is for the first time put forward by us

    其中，靶法線方向的超熱電子發射峰與共振吸收（ res ~ eabso甲tion ）機制所預言的一致;根據理論估算提出激光反射方向的超熱電子發射峰是幾種加速機制共同作用的結果;我們首次提出背反射激光加速超熱電子的新機制，並用此機制解釋了激光背反射方向產生的超熱電子發射峰。
  16. The experimental results are helpful to understand the acceleration mechanisms of the hot electron emission in the interaction of the us - ui laser pulse with plasma. an anisotropy energy distribution of the hot electrons emiaon has been observed for the first time in the experiments. the energy spectrum of hot electrons resulted from the resonance absorption at the direction of target normal is a maxwellian - like distribution

    E11分佈，擬合的超熱電子有效溫度約200kev左右，超熱電子的最大能量約zmev ，加速電子的主導機制是共振吸收機制;反射方向超熱電子的能譜在低能段出現一個局部的平臺（ pla1leau ） ，呈現出非類maxwen分佈，這是幾種加熱機制共同作用的結果，其中佔主導地位的是反射激光加速機制。
  17. In this paper, such three points are studied as : a ) the angular distributions of the hot electrons emission under laser irradiation at different incidence angles and at different polarization direction, the angular distribution of the hot electrons in the different energy range, and the effects of laser prepulse on the angular distributions of the hot electrons emission ; b ) the energy distribution of the hot electrons at different directions, from the metallic targets and the dielectric targets, in the different energy range of the hot electrons, and the effects of the atomic number z on the energy distribution of hot electron generated by the metallic targets ; and c ) the energetic proton emission resulting from the interaction of the us - ui laser pulse with plasma

    本論文進行了三個方面的研究：第一，超熱電子角分佈的研究，包括不同激光入射角下超熱電子的角分佈；激光不同偏振態下超熱電子的角分佈；激光預脈沖對超熱電子角分佈的影響；不同能段的超熱電子的角分佈。第二，超熱電子能量分佈的研究，包括不同方位超熱電子的能量分佈，金屬與非金屬靶材的超熱電子的能量分佈，金屬原子序數z對超熱電子能量分佈的影響以及不同能段超熱電子的能量分佈。第三，研究了超短超強激光與固體靶相互作用所產四川大學博士學位論文生的高能質子發射和能譜。
  18. The main points include : the bias electric field and the charges in the traps are the main reasons to generating hot electrons, the number and the kinetic energy of hot electrons are determinative for damage degree of ga ? s bands, relaxation degree of ga ? s network reflects the degree of breakdown, and the number of the detrapping of trapped electrons reflects the degree of restoration

    其主要作用機制為:偏置電場和陷阱電荷電場可產生大量熱電子，熱電子的數量和動能決定ga一as鍵的損壞程度， ga一as的斷裂程度反映pcss 』 s的擊穿類型，而退陷電荷的數量則反映了pcss ， s可恢復損傷的程度。
  19. The correlation between the calculated electron energy in the oxide and the electric field in the silicon substrate indicates that the difference between hot electron injection and the fn tunneling can be explained in terms of the average electron energy in the oxide

    通過計算注入到氧化層中的電子能量和硅襯底的電場的關系表明，熱電子注入和fn隧穿的不同可以用氧化層中電子的平均能量來解釋。
  20. A novel flash memory, which uses the source induced band - to - band tunneling hot electron ( sibe ) injection to perform programming, and a pmos selected divided bit - line nor ( pnor ) array architecture are originally introduced in this dissertation

    本論文首次提出了一種採用源極誘導帶帶隧穿熱電子注入（ sourceinducedband - to - bandtunnelinghotelectroninjection ）進行編程操作的新型快閃存儲器技術和一種pmos選擇分裂位線nor （ pmosselecteddividedbit - linenor ）快閃存貯陣列結構。
分享友人
分享到 Line

分享到臉書