熱電子注入 的英文怎麼說

中文拼音 [rèdiànzizhùrù]
熱電子注入 英文
hot electron injection
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 注 : Ⅰ動詞1 （灌入） pour; irrigate 2 （集中） concentrate on; fix on; focus on 3 （用文字來解釋字句）...
  • 入 : Ⅰ動詞1 （進來或進去） enter 2 （參加） join; be admitted into; become a member of 3 （合乎） conf...
  • 電子 : [物理學] [電學] electron
  • 注入 : pour into; empty into; inpouring; injection; infusion [拉丁語]; infunde [法國]; abouchement; influxion
  1. Again, because the ion influx technique have a little damnification on the skin - deep structure for the cdte thin films, among the experiment, we have let the doped cdte thin films be annealed a hour with n2 atmosphere at 500, and then slowly cooled until the room temperature. via the test and analyse, heat treatment has very important effect on the comeback of crystallattice surface disfigurements. finally, the films were characterized by x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), ultraviolet visible ( uv ) and the hall effect measurement

    再次，由於離子注入會對薄膜表面的結構造成損傷，本實驗把被注入離子的cdte薄膜在n2氣氛中500下退火1個小時，然後緩慢冷卻至室溫。經測試分析，熱處理對晶格表面缺陷的恢復有很重要的作用。最後，利用xrd 、 sem 、紫外可見分光光度計及hall測試系統研究其結構，表面形貌和光電性能。
  2. Account for the high electrical field induced from the high applied voltage relative to small dimension device, the mechanism of hot - carrier generation is analysed, the si - h bond broken model for hot - carrier injection and interface states generation is deduced and the substrate current model is developed

    基於mosfet偏壓不能按比例縮小所導致的高電場，對mosfet的熱載流子產生機理進行了分析，導出了熱載流子注入所引起的界面態的si - h健斷裂模型，並建立了表徵器件熱載流子效應的襯底電流模型。
  3. The positive charge assisted tunneling current can be greatly reduced by using appropriate substrate hot electron injection technique

    利用襯底熱電子注入技術，正電荷輔助隧穿電流可被大大的減弱。
  4. The aim of the thesis was that the pure cdte thin films were adulterated by the influx technique with different metals, and then we have investigated its configuration and photoelectricity after the anneal treatment

    目前，用離子注入的方法在cdte薄膜中摻雜的文獻報道的很少。本工作目的就是採用離子束注入的方法對純cdte薄膜進行不同金屬元素的摻雜及熱處理，研究其結構和光電特性。
  5. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用離子束增強沉積設備，在ar ~ +離子束對v _ 2o _ 5靶濺射沉積的同時，用氬、氫混合束對沉積膜作高劑量的離子束轟擊，使得被氬離子轟擊后斷鍵的氧化釩分子，再被注入氫降價，然後經適當的退火，成功地制備了熱電阻溫度系數高達4的vo _ 2薄膜（國外報道值為2 - 3 ） ，並研製了單元懸空結構探測器和8 1 ， 16 1線性陣列。
  6. The first step is the creation of trap centers in ultra - thin gate oxides by hot electron injection, and the second step is oxides breakdown induced by hole trapping

    首先注入的熱電子在超薄柵氧化層中產生陷阱中心，然後空穴陷入陷阱導致超薄柵氧擊穿。
  7. The correlation between the calculated electron energy in the oxide and the electric field in the silicon substrate indicates that the difference between hot electron injection and the fn tunneling can be explained in terms of the average electron energy in the oxide

    通過計算注入到氧化層中的電子能量和硅襯底的電場的關系表明，熱電子注入和fn隧穿的不同可以用氧化層中電子的平均能量來解釋。
  8. A novel flash memory, which uses the source induced band - to - band tunneling hot electron ( sibe ) injection to perform programming, and a pmos selected divided bit - line nor ( pnor ) array architecture are originally introduced in this dissertation

    本論文首次提出了一種採用源極誘導帶帶隧穿熱電子注入（ sourceinducedband - to - bandtunnelinghotelectroninjection ）進行編程操作的新型快閃存儲器技術和一種pmos選擇分裂位線nor （ pmosselecteddividedbit - linenor ）快閃存貯陣列結構。
  9. So, both 1 / f noise power spectrum measurement and similarity coefficient extracted from its time series can offer economical, effective and indestructible tool to detect the latent damage induced by esd and hci for mosfets

    因此，無論是1 / f噪聲功率譜的測試還是由其時間序列提取得到的相似系數均可以作為經濟、有效、完全非破壞性的工具，替代傳統的電特性用於檢測靜電引起的mos器件潛在損傷以及熱載流子注入損傷。
  10. Vacuum coating machine, vacuum coating equipment, diffusion pump, vacuum plating factory, vacuum coating, ion injector, vacuum thermal treatment, vacuum thermal treatment equipment, vacuum equipment, thermal treatment equipment - longkou bite vacuum technology co., ltd

    真空鍍膜機，真空鍍膜設備，擴散泵，真空電鍍廠，真空鍍膜，離子注入機，真空熱處理，真空熱處理設備，真空設備，熱處理設備-口市比特真空技術有限公司
  11. The author ' s main contributions are outlined as following : first, the roles of hot electron and hole in dielectric breakdown of ultra - thin gate oxides have been quantitatively investigated by separately controlling the amounts of hot electron and hot hole injection using substrate hot hole ( shh ) injection method. the changes of threshold voltage have been discussed under different stress conditions

    主要研究結果如下：首先，利用襯底熱空穴（ shh ）注入技術分別控制注入到超薄柵氧化層中的熱電子和空穴的數量，定量研究了熱電子和空穴注入對超薄柵氧化層擊穿的影響，討論了不同應力條件下的閾值電壓變化。
  12. In this paper, we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time. studied the different annealing condition dependence of the samples " structure, electrical and magnetic properties and the relation of the mn + forms and these properties

    本課題採用離子注入的方法將不同劑量的mn ~ +注入到非摻雜半絕緣（ 100 ） gaas單晶襯底中，然後進行不同溫度和時間的快速熱退火處理，研究了不同的退火條件對樣品注入層的晶體結構、電特性和磁特性的影響以及mn ~ +在樣品中的存在狀態與這些性質之間的關系。
  13. With the serious problem of harmonics pollution to the power system, as well as the need of high performance of ac drive application, three - phase pwm rectifiers have been as active research topic in power electronics recently, due to the virtues, such as sinusoidal input currents, unity power factor, steady output voltage, good dynamics and bin - directional energy flow

    隨著電網諧波污染問題日益嚴重和人們對高性能電力傳動技術的需要， pwm整流技術引起人們越來越多的注意。三相pwm整流器可以做到輸入電流正弦、單位功率因數、直流電壓輸出穩定，具有良好的動態性能並可實現能量的雙向流動。因此， pwm整流器成為當前電力電子領域研究的熱點課題之一。
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