生長的晶體 的英文怎麼說

中文拼音 [shēngzhǎngdejīngtǐ]
生長的晶體 英文
as grown crystal
  • 生 : Ⅰ動詞1 （生育; 生殖） give birth to; bear 2 （出生） be born 3 （生長） grow 4 （生存; 活） live;...
  • 長 : 長Ⅰ形容詞1 （年紀較大） older; elder; senior 2 （排行最大） eldest; oldest Ⅱ名詞（領導人） chief;...
  • 的 : 4次方是 The fourth power of 2 is direction
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 生長 : grow; grow up; ascent; merisis; build up; auxesis; increment; overgrowth; gain; burgeon; bourgeon...
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. ( 2 ) l - cystine, tyrosine, dl - aspartic acid, l - lysine were used as soft - templates to regulate and control the crystallization of caco3. the effects of different amino acid to the growth of caco3

    （ 2 ）分別以l一膚氨酸、 l一酪氨酸、 dl一天冬氨酸、 l一賴氨酸作為軟模板，分別研究了其對碳酸鈣晶體生長的影響。
  2. 4. the magnesium ions, l - cystine, tyrosine, dl - aspartic acid, l - lysine, and the mixed system of magnesium ions and amino acid were used as effective soft - templates to regulate and control the crystallization of caccb, respectively

    以鎂離子、 l -胱氨酸、 l -酪氨酸、 dl -天冬氨酸、 l -賴氨酸以及它們的混合體系為模板，研究了其對碳酸鈣晶體生長的調控作用。
  3. Based the eag - i etchant, a new etchant was developed, with which the etch pit pattern on ( 110 ), ( 111 ) and ( 100 ) faces of czt crystals can emerge immediately and effectually. this pager investigated relation between the ( 110 ) faces of cutting from crystals conveniently and accurately by laser reflex method. by the surface treatment, the nuclear radiation detector was fabricated with ( 110 ) of czt crystal and strong 241am responsibility was observed

    在改變e _ （ ag ）腐蝕液的配方的基礎上，研製了新的腐蝕液，可方便、快速、有效的顯示czt不同晶面的缺陷蝕坑形貌;研究了利用激光正反射法和自然解理的不同（ 110 ）面之間的關系，方便、快速、準確的進行定向切割晶體的方法;採用生長的czt單晶體自然解理的（ 110 ）面，經過表面處理，試制了探測器元件，對24lam有較強的響應。
  4. These defects appear during crystal growth, but crystals having such defects are not considered usable for ic manufacture and are discarded.

    這些缺陷在晶體生長時出現，有這類缺陷的晶體不能用於集成電路製造，應報廢。
  5. The thickness had some influence on the development of the banded spherulites : when the thickness reduced to some degree, pcl would develop chrysanthemum - like spherulites, which had no extinction rings or the maltese cross pattern under the crossed polarized optical microscopy. the results of the phase - contrast microscopy showed that growth speed of the chrysanthemum - like spherulites along the radius was not constant

    發現薄膜厚度對球晶的生長有一定的影響，當共混物膜薄到一定程度時， pcl不能形成環帶球晶，而是形成一種類似菊花狀的晶體，在偏光顯微鏡下看不到環帶，也沒有典型球晶所特有的maltese十字消光圖案。
  6. Based on the crystal growth elementary principle, a plagioclase crystalline velocity equation is suggested

    從晶體生長的基本原理出發，提出了按非連續機制生長的斜長石晶體結晶速率表達式。
  7. Inhibitory effect of quercetin on cultured human lens epithelial cell in vitro

    槲皮素抑制體外培養的人眼晶狀體上皮細胞生長的研究
  8. The as - grown crystals were characterization by cutting and directional, x - ray diffraction, high resolution ohmmeter, ir transmission spectroscopy, visible light absorption spectroscopy, scan electronic microscopy ( sem ) and positron annihilate time technique ( pat ). the ir transmittance of czt single crystals grown with cd - riched is about 53 %, while 23 % with no cd riched

    採用解理實驗、 x射線衍射、電學性能測試、紅外透過譜測試、可見光吸收譜測試、 sem蝕坑分析、探測器的試制等分析測試方法，並首次採用正電子湮沒壽命譜分析方法來研究czt單晶體的空位缺陷，綜合表徵了所生長的晶體的質量和性能。
  9. The structurally perfect and high - quality ba0. 5sr0. 5tio3 single - crystalline thin films were prepared on laalo3 and mgo substrates by pulsed laser depositioa the ba0. 1sr0. 9tio3 / yba2cu3o7 - heterostructure films were fabricated by pulsed laser deposition on a vicinal laalo3 su bstrates

    詳盡地分析這些薄膜的衍射圖樣可知，薄膜都是以外延特性生長的而且晶體質量良好，但薄膜生長模式及表面平整度受沉積條件影響較大。
  10. The microstructure morphology, the concentration, the infrared transmittance, and the x - ray rocking curves measured showed that a long single crystal part and axial steadily distributed zone of the concentration existed in the as - grown crystals. the radial concentration distribution has relatively high uniformity

    通過觀察生長態晶體中的微觀組織形貌，並測量晶體軸向和徑向上不同位置處的成分、紅外透過率和x射線回擺曲線，發現晶內有較長的單晶段和軸向成分穩定區。
  11. Chondroitin sulfate a ( c4s ), as a kind of endogenetic urinary macromolecule, not only increased the supersaturation of cac2o4 in solution, but also inhibited the two - dimensional growth and aggregation of com crystals. the growth of calcium oxalate crystals was influenced by surface pressure beneath dppc monolayer film. there were some crystals which have the same appearance as com crystals obtained from pure water system when monolayer surface pressure was hold 1, 10 and 30 mn / m while those growth at 20 mn / m were perfect orderly induced by dppc monolayer

    生物大分子c _ 4s作為一種內源性的尿大分子，它不僅從熱力學上提高ca ~ （ 2 + ）在尿液中存在的濃度，使體系中cac _ 2o _ 4保持較高的相對過飽和度，降低草酸鈣結石成核的可能性；而且在晶體生長時，抑制com晶體晶面的二維生長和晶體聚集。
  12. The liquid - phase synthetic method was improved to obtain the sedimentation of yvo4, which makes the procedure more convenient and the sedimentation more compact. based on the syntheses of the raw materials, the czochralski method was used to grow the crystal from different charges. by comparing with the spectrum in the ultra - violet region of the yvo4 crystals grown in the same condition, the result was reached that the presence of the 1552 absorption peak is independent of the direction of the crystal growth and the annealing, but is related to the impurity of the charges

    採用多種方法合成了用於晶體生長的yvo _ 4原料，改進了液相合成法中獲得yvo _ 4沉澱的方法，使得該方法更為簡便，獲得的沉澱更加緻密；在原料合成的基礎上，採用提拉法對來源不同的生長原料進行了生長，並通過對在相同氣氛下生長的晶體的紫外透過譜線的對比，指出了該吸收峰的存在與晶體生長方向及有無退火無關，進而提出該吸收峰的存在與合成原料中有無雜質有關。
  13. A ) si thin film with sub - micro thickness was epitaxial grown on heavy - doped si substrate by ultra high vacuum chemical vapor deposition ( uhv - cvd )

    A ）利用超高真空化學氣相沉積（ uhv - cvd ）技術在重摻si襯底上生長高晶體質量的亞微米級薄硅外延片。
  14. The novel method of liquid phase epitaxial growth process of p - sic from p - sic film on si substrate in c - saturated si solvent is further investigated. some processes of acquiring the fundamental technical parameters and some solution to some critical technical problems are introduced. especially, the optimized technical schemes of effectively restraining such a - sic polytypes as gh - sic coring and growing in p - sic epitaxial growth process is presented

    對利用硅襯底上的- sic薄膜從碳飽和硅熔體中外延生長- sic晶體的創新方法進行了工藝探索，介紹了基本工藝參數的獲取過程和幾個關鍵工藝問題的解決方法，特別是提出了通過工藝條件的調控來有效抑制6h - sic等型同質異構體在- sic生長過程中成核生長的工藝方案。
  15. The other has two metal - insulator - semiconductor ( ms ) contacts with lower leakage current ( less than 4 pa, 300v ) and better energy resolution ( about 10 % fwhm for 241am 59. 5kev line ) and poor working stability. in theoretical studies, the analysis on the phase equilibrium in the vapor growth of cdse single crystals shows that the stoichiometry of cdse crystals can be controlled effectively by controlling the stoichiometry of starting materials and the vapor growth temperature. besides, the investigation of the transporting properties of charge carries in cdse detectors indicates that the noise in energy spectrum detected by using the detectors with msm structure is caused by the hole injection, which is induced by electron injection and the light injection

    本文把cdse單晶體的生長、單晶體的成分、單晶體的性能以及單晶體在室溫核輻射探測器中表現出來的性能結合起來進行了比較系統的研究；採用垂直無籽晶氣相提拉法生長出了電阻率為10 cm量級、尺寸為中10mm 30mm的單晶體；制備出了能量解析度達10 （ fwhm ） （對~ （ 241 ） am59 . 5kev譜線而言）的cdse室溫核輻射探測器，取得了較好的研究結果。
  16. And that is how, on one and the same crystal, although it has grown quite naturally, completely different colours can occur, mostly in elongated columns one above the other, as if nature had piled coloured rings one on top of the other

    因此，在同一個自然生長的晶體，是極有可能會出現許多不同的顏色。通常它的生長模式是順著縱向一層一層的加上不同的顏色，就好比製作多層彩色果凍般，在每一層顏色上加上另一層不同的顏色。
  17. The results show that crystal inhomogeneities and suitable contacts are critical to the fabrication of high quality cdznte spectrometers. the modified growth technique is a new and promising method for growing highly pure and perfect cdznte single crystals. good quality ohmic contact detectors are achieved when gold or indiumare deposited as electrodes on polished and chemically etched surface

    結果表明：材料內部的缺陷和歐姆接觸是影響器件性能的兩個關鍵因素，採用改進的富鎘氣氛下坩鍋旋轉下降法生長的晶體具有較低的缺陷濃度，適合製作探測器，採用au 、 c可得到歐姆接觸。
  18. The uv - vis transmission spectra and concentrations of metal ion impurities in different part of dkdp crystal was measured. the results show concentrations of metal ion impurities on the ( 100 ) face is higher than that on the ( 110 ) face and absorption on the ( 100 ) face is bigger than that on the ( 110 ) face

    通過測試點狀籽晶生長dkdp晶體不同部分雜質金屬離子的含量和紫外可見透過光譜，結果發現dkdp晶體柱面的雜質金屬離子含量比錐面高，柱面的紫外可見吸收比錐面大。
  19. The point seed growth techniques of high quality dkdp crystal in all directions have these features of fast growth rate, high utilization ratio and low growth cost

    點狀籽晶全方位生長dkdp晶體的方法具有生長速度快、晶體利用率高、生長成本低的特點。
  20. Sol vothermal syntheses and crystal structures of chalcogenides ni

    7的溶劑熱生長及晶體結構
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