生長雙晶 的英文怎麼說

中文拼音 [shēngzhǎngshuāngjīng]
生長雙晶 英文
growth twinning
  • : Ⅰ動詞1 (生育; 生殖) give birth to; bear 2 (出生) be born 3 (生長) grow 4 (生存; 活) live;...
  • : 長Ⅰ形容詞1 (年紀較大) older; elder; senior 2 (排行最大) eldest; oldest Ⅱ名詞(領導人) chief;...
  • : Ⅰ形容詞1 (兩個) two; twin; both; dual 2 (偶數的) even 3 (加倍的) double; twofold Ⅱ量詞(用...
  • : Ⅰ形容詞(光亮) brilliant; glittering Ⅱ名詞1. (水晶) quartz; (rock) crystal 2. (晶體) any crystalline substance
  • 生長 : grow; grow up; ascent; merisis; build up; auxesis; increment; overgrowth; gain; burgeon; bourgeon...
  1. Development of such distributed feedback heterostructure lasers requires crystal growth on corrugated layers.

    研製這種分佈反饋異質結構激光器要求在皺折層上出單層。
  2. But the grain growth, grain semiconduction and grain boundary insulation were influenced by many factors, such as the type and contents of dopants, sintering temperature and so on. therefore, in this thesis the effect of the restore sintering temperature, the oxygenize temperature, the donor and acceptor dopant on the dielectric and varistor properties of devices were studied. with sem, the microstructure of srtio3 - based double function ceramic was analyzed

    粒半導化和界絕緣化受到多種因素的影響,諸如雜質的種類和含量、燒成溫度等,因此本論文研究了還原燒成溫度、中溫氧化溫度、施主和受主摻雜等對srtio _ 3基陶瓷的壓敏和介電性能的影響,並藉助于sem分析對srtio _ 3基功能陶瓷的微觀結構進行了分析。
  3. Our company specialized in producing jiji thermos and sales various kinds of high, medium and low grade thermos, coffeepot, heat preservation barrel, porcelain enamel, aluminium articles, and has beco - me general agent of qingshui thermos, tianshi thermos, good daughter - in - law thermos, meidelong t - hermos, lilac thermos, gold bear thermos, double butterfly thermos, changjia thermos, cat brand th - ermos, rabbit brand thermos, red light thermos, wujiang thermos, yuda thermos, shunchang thermosand aojing electric thermos, etc. in yiwu

    本公司專業產吉吉暖壺,經銷各類高中低檔保溫瓶咖啡壺保溫桶搪瓷鋁製品,現已成為清水暖壺天獅暖壺好媳婦暖壺美得隆暖壺紫丁香暖壺金熊暖壺蝶暖壺佳暖壺貓牌暖壺兔牌暖壺紅燈暖壺五江瓶膽裕達保溫桶順昌保溫桶及奧電熱水壺等產品的義烏總代理。
  4. In the paper we mainly researched space gainp2 / gaas / ge high efficiency tandem cells " making process by home - made low pressure mocvd technology and new solar concentrators. firstly, we presented reseached and development of solar cells in china and foreign countries ; secondly, on the basis of fundamental priciples and theories, we discussed some factors of influcing conversion efficiency of solar cells, and analysed the i - v output feature of two - junction tandem cells ; then the design concept of gainp2 / gaas / ge two - junction tandem cells was discussed, the detailed aspects of gainp2 / gaas / ge tandem cells epitaxy growth by low pressure mocvd was studied, and some questions on epitaxy growth ( such as crystal qualities, interface stress, element interdiffusion, n - and p - type doping et all ) were solved ; after that, the cell fabrication process was described ; finally, we reseached the hot pressing and mould process technology of an arched line - focus fresnel lens made by pmma, designed and fixed new solar concentrators

    本文致力於用自製的低壓mocvd裝置進行cainp _ 2 / gaas / ge空間用高效級聯太陽能電池製作的工藝以及聚光太陽能電池組件的研究。首先,介紹了國內外太陽能電池的研究現狀及應用情況;其次,運用太陽能電池基本原理討論影響電池轉換效率的因素,分析了級聯電池的伏安特性;隨后,討論了cainp _ 2 / gaas / ge結級聯電池的結構設計理念,研究了採用低壓mocvd技術cainp _ 2 / gaas / ge級聯太陽電池材料的工藝過程,解決了異質材料的結質量、界面應力、材料互擴散以及材料n 、 p型摻雜等一系列問題;然後總結了級聯電池的后工藝製作;最後,研究了以pmma為材料的菲涅耳線聚焦透鏡的熱壓成型工藝及其模具的加工工藝,設計並安裝完成新型聚光太陽能電池組件。
  5. The difference between the magnetic moments for the samples with respective doping level can be ascribed to the variation of the competition between thermal effect and the magnetic coupling. based on the spin orientation rotation of dy sublattice as well as the antiferomagnetic coupling between dy sublattice and mn sublattice, we successfully elucidate the changes of magnetic structure in perovskite compounds s. electron spin resonance ( esr ) study on perovskite compounds on the basis of chapter 4, we give further study on micromagneticism of dy - doping perovskite compounds la0. 67 - xdyxsr0. 33mno3

    其中第一節簡單回顧了早期對a位稀土元素元素摻雜鈣鈦礦化合物的研究,早期研究較多的是替代元素的離子半徑變化上,由於替代離子半徑的改變,使a位平均半徑變ylll化,致使公差因子改變,使mn o、鍵角變化,格效應的作用使化合物的磁性、電性、 cmr效應發改變。
  6. With optimized buffer layer growth parameters, gan epilayer with improved quality has been grown, whose fwhm of ( 0002 ) plane dc - xrd rocking curve is 6 arcmin

    以優化的緩沖層條件得到質量有明顯改善的gan外延層, gan薄膜的( 0002 )面dc - xrd掃描的半高寬為6arcmin 。
  7. The tunable performance is obtained by rotating the grating. the disadvantages of the mechanical tunable filter are high control voltage, slow response time and big volume. the electro - optic tunable filters are obtained by the alteration of the birefringence of the electro - optic material applied voltage

    電子光學濾光片則是通過施加電壓使各種電子光學材料的折射率發變化來實現透射波的調諧,也可以利用電光體在電場中的旋轉來實現波的調諧。
  8. In addtion, the growth rate of low temperature insb buffer layer was 0. 26 m / h, which was obtained by rheed intensity oscillation curves. growth temperature of insb epilayers were investigated with sem and dcxrd, and it was found that the optimum temperature was 440. a 2. 1 m insb layer grown at 440 had an x - ray rocking curve of 412 arcsec, the strain relaxtion was about 99. 02 %

    通過掃描電鏡形貌觀察與能譜分析發現:溫度較低時sb的表面遷移率低,容易在表面堆積;結合x射線衍射分析,確定高溫insb外延的最佳襯底溫度為440 ,該溫度下2 . 1 m的樣品x射線半高峰寬為412 ,應變弛豫99 . 02 % 。
  9. We article reviewed craftwork characteristic of growth yvo4 crystal by means of czochralski - cz. according to method of fimty - difference, we compiled field quantity estimate program ( fqep ) with vc + + that we can numerical simulate temperate - field and velocity - field while yvo4 dual - refractive optics crystal is growing

    本文對丘克拉斯基( czochralskicz )法yvo _ 4體的工藝特點進行了評述,根據有限差分的方法,用vc + +語言編寫了場量計算程序,對yvo _ 4折射光學過程中的溫度場和速度場進行了數值模擬。
  10. Molecular beam epitaxy ( mbe ) has been used to grow insb heteroepilayer on gaas ( 001 ) substrate with optimized low temperature buffer layer. the surface morphology and crystal quality of insb epilayers have been investigated by means of atomic force microscope ( afm ), scanning electron microscopy ( sem ) and double crystals x - ray diffraction ( dcxrd )

    本文採用分子束外延( mbe )方法在gaas ( 001 )襯底上優化低溫緩沖層條件制備了異質外延insb薄膜,採用原子力顯微鏡( afm ) 、掃描電鏡( sem )與x射線衍射( dcxrd )等方法研究了insb / gaas薄膜的表面形貌與結質量。
  11. Grain size, the semiconducting of grain and the insulating of grain boundary were keys to the single - fired process of preparation of srtio3 - based double function ceramic, and affected directly the dielectric and varistor properties

    在srtio _ 3基功能陶瓷的一次燒成制備過程中,最關鍵的是粒半導化和界絕緣化,它們直接影響陶瓷的壓敏和介電性能。
  12. The results reveal that the microstructure of the nb - si system intermetallics consists of nb and nbasi phases. because of unstable microstructure of nfysi phase at high temperature, the equilibrium nb + nbssia dual - phase microstructure of the nb - si system intermetallics should be acquired by means of heat - treatment

    研究表明,採用電弧熔煉和單技術制備的nb - si系金屬間化合物的顯微組織主要由nb + nb _ 3si組成,而由於nb _ 3si相在高溫下是不穩定的,為了得到穩定的nb + nb _ 5si _ 3相組織,必須對材料進行熱處理。
  13. For srtio3 - based double function ceramic, it is well know that the suitable grain size, the semiconducting of grain and the insulating of grain boundary are important keys

    在srtio _ 3基功能陶瓷的制備中,最關鍵的是粒半導化和界絕緣化。
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