畸變晶格 的英文怎麼說

中文拼音 [jībiànjīnggé]
畸變晶格 英文
distorted lattice
  • 畸 : Ⅰ形容詞1 （偏） lopsided; unbalanced2 （不正常的; 不規則的）irregular; abnormalⅡ名詞[書面語] （零...
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 格 : 格象聲詞rattle; gurgle
  1. The dielectric constants of pt / tb films were influenced by the lattice aberrance and crystal content

    Pt tb薄膜的介電常數受薄膜中鈣鈦礦相晶格的畸變和晶體含量的共同作用。
  2. The dielectric constants were relatively high either lattice aberrance was tiny or crystal content was large

    摻tb薄膜的介電常數在晶格畸變程度小時和在摻tb后使晶體含量出現最大值時都較高。
  3. Based on the principle of mechano - chemistry, the strong shock and crashing mechanical force produced by ls - 250 pulverizer can act to the surface of superfine carbon and white carbon particles during the process. the result of the experiment indicated that distortion and amorphism change occur to the surface crystal lattice of carbon particles, and the phenomena are prick up as the action time of mechano - chemical force

    依據機械化學原理利用ls一250型流能粉碎機高速旋轉的動齒工作過程中產生的強烈沖擊、碰撞機械力，使其作用於超細石墨及白碳黑顆粒表面，檢測表明，石墨粒子表面晶格發生畸變及無定形化，且隨著機械力作用時間的延長而加劇。
  4. It is shown that with increasing doped value x, structures of the crystals change its low symmetry into high symmetry and doping with praseodymium can induce larger crystal structure distortion than other elements

    發現塊材樣品隨摻雜量x增加，晶體結構由低對稱向高對稱性轉變。通過摻雜pr元素可以引起晶格較大畸變。
  5. The temperature dependences on the resistance in all the thin films show that in the low temperature range the width of eg band level changes the transports, but in the high temperature range the thin films forms the small polarons hopping conductivity. the phase transition induced by the current is explained by the demagnetization and lattice distortion

    在高溫部分，材料呈現小極化子跳躍形式輸運特徵；實驗研究了不同偏置電流對薄膜的相變影響，表明電場可以引起材料中磁性的變化和晶格畸變，導致相變溫度點向低溫方向移動；材料的光致相變研究表明光子能量、光強和極化方向對輸運性質有影響。
  6. The experiments showed that wc and vc can dissolve mutually in the carbonizing reaction. when wc ' s content exceeds vc ' s, vc will dissolve into wc and make wc ' s crystal lattice bring aberrance and become wc1 - x, contrarily when vc ' s content exceeds wc ' s, wc will dissolve into vc and also make vc ' s crystal lattice bring aberrance. the surface cermet composite has high rigidity and well wear - resistance

    （ 7 ）採用鑄造燒結技術，通過加入毗顆粒和v班一vc的原位放熱反應成功制取了碳化物陶瓷質量百分數超過60 %的表面金屬陶瓷材料，實驗證實wc與高溫碳化反應生成的vc相互可以很好的固溶，當wc的含量超過vc時， vc可以固溶到wc中，使wc的晶格發生畸變，成為昵卜: ，反之當vc的含量超過wc的含量時， wc可以固溶到vc中，也會造成vc的晶格畸變。
  7. The main origin of the perpendicular magnetic anisotropy in tbco amorphous films is the static interaction between the aspheric distribution charges of non - s tb ions and the aberrant crystal field produced in sputtering and deposition process. the magnetic dipole interaction is in a secondary cause

    對于tbco非晶垂直磁化膜而言，具有非球對稱電荷分佈的非s態離子tb與濺射沉積薄膜過程中產生的畸變晶格場之間的靜電相互作用構成了tbco非晶薄膜垂直磁各向異性的主要部分， tbco薄膜內的磁偶極相互作用構成了其次要部分。
  8. The error of the calculation methods used in this paper is estimated by comparing the calculation results of ge, gap, gaas arid inp with their experimental results. the error due to ignoring the lattice aberration causing by substitutional atoms is also discussed. the way to increase the accuracy is discussed

    通過比較ge 、 gap 、 gaas和inp的計算結果和實驗結果之間的差別，對該方法的計算誤差進行了估算，分析了由於忽略雜原子取代所導致的晶格畸變產生的誤差，並提出了解決辦法。
  9. When the - 3 - particle size was small, the aberration of crystal lattice appeared and the bandgap energy increased, which resulted in the blue shift of absorption in the spectrum

    本研究中小的二氧化鈦晶粒導致了tio _ 2的晶格畸變，進而增大了tio _ 2的禁帶寬度，表現在光吸收譜的藍移。
  10. The reasons were about to the distortion of crystalline grain of metal, caused by cold - working, and size - effect of the fibers

    這與冷加工引起金屬晶格畸變以及纖維的尺寸效應有關。
  11. The photo - induced phase transition of the different light intensities, photo - energies and directions of the polarized light is investigated. it suggested that the photo excites the down spin eg electrons and destroys the spin order system of the thin films. the relation between the he - ne laser reflectivity of the thin film, applied current and resistance was analyzed by the optics theory of solid state physics

    光子通過激發e _ g向下電子的躍遷，從而改變材料自旋極化方向，影響體系的輸運行為；首次研究了cmr薄膜的激光反射率和偏置電流的關系，並用固體光學理論對其定性分析，表明反射率的變化是由於電場引起材料的晶格畸變，改變了極化率，從而導致材料的折射率和反射率發生改變。
  12. Experimental results show that the grains were gradually triturated to namometer size with milling time and the grain size might be 30nm or so, but the grain size was not decreasing after the powder has been milled for 25 hours. the nano - sized sic was synthesized by ball milling of si and c mixed powders which rare earths as a additive was added to

    結果表明：隨著時間的延長，粉末逐漸細化至納米級，可以細化到30nm左右，但球磨時間超過25h后粉末顆粒繼續細化的速度明顯放慢，並且在球磨的過程因為晶粒細化和晶粒內部發生了嚴重的晶格畸變，納米粉體x射線衍射峰產生嚴重寬化。
  13. To characterize the particle size of the srce03 products, some methods used to determine the crystalline grain size and crystal lattice distortion rate of nanostructured powder based on xrd data were studied. it was found that some methods had their shortage. to rationalize the calculation, a proper treating method was recommended

    為了表徵所制備的納米srceo3粉體的粒度，本論文對利用粉晶x射線衍射技術表徵納米粒于的粒度和晶格畸變的方法進行了研究，發現已有的某些方法中存在的不合理性，針對表徵方法的合理化提出了自己的見解。
  14. According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon

    Soi技術和多孔硅納米發光技術研究是當今微電子與光電子研究領域的前沿課題，本文根據科學院創新工程研究工作的需要，開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅發光性能的研究，獲得的主要結果如下：系統研究了矽片摻雜濃度、摻雜類型和陽極氧化條件等因素對多孔硅結構、單晶性能和表面狀態的影響，發現多孔硅與襯底並不是嚴格的四方畸變，在多孔硅/硅襯底的界面上，多孔硅的晶格與襯底完全一致，但在孔的邊緣，多孔硅的晶格發生弛豫。
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