真空測量儀表 的英文怎麼說

中文拼音 [zhēnkōngcèliángyíbiǎo]
真空測量儀表 英文
vacuum measuring instrument
  • 真 : Ⅰ形容詞（真實） true; genuine; real Ⅱ副詞1 （的確; 實在） really; truly; indeed 2 （清楚確實） cl...
  • 空 : 空Ⅰ形容詞（不包含什麼; 裏面沒有東西或沒有內容; 不切實際的） empty; hollow; void Ⅱ名詞1 （天空） s...
  • 測 : 動詞1. （測量） survey; fathom; measure 2. （測度; 推測） conjecture; infer
  • 量 : 量動1. （度量） measure 2. （估量） estimate; size up
  • 儀 : 名詞1 （人的外表） appearance; bearing 2 （禮節; 儀式） ceremony; rite 3 （禮物）present; gift 4 ...
  • 表 : Ⅰ名詞1 （外面;外表） outside; surface; external 2 （中表親戚） the relationship between the child...
  • 真空 : [物理學] vacuum; empty space; vacuo
  • 測量 : measure; survey; gauge; meter; measurement; measuring; surveying; mensuration; metering; gauging;...
  • 儀表 : 1. （人的外表） appearance; bearing 2. （各種測定儀） meter; instrument; apparatus
  1. It is used for pressure and vacuum of ammoniac liquid and gas as well as of zhe madia which can ' t corrode carbon steel, stainless steel and solders like tin and lead

    儀表適用於測量氨的液體和氣體的壓力真空，也可測量對碳鋼、奧氏體不銹鋼和錫鉛類焊料無腐蝕作用的介質的壓力和真空。
  2. In this experiment, the quantity change of partial pressure of main elements is given by longtime dynamic measuring of metal dewar exhausting with quadrupole mass spectrometer ( qms ), the results show that exhausting technology influences outgassing of dewar vacuum vessel, this paper gives the theory, equipment, method, data and disturb fators, we also give primary investigation how the main gases affect the vacuum integrity of dewar and point out the possible ways which can be applied to present technology

    摘要實驗研究用四極質譜儀對金屬杜瓦排氣進行長期動態監測，跟蹤內部主要氣體成分的分壓強的大小變化，得出排氣工藝對杜瓦內表面放氣量大小的影響，介紹了實驗的原理、裝置、方法、數據和干擾因素，對影響杜瓦真空度的主要氣體成分進行了初步研究，提出改進杜瓦排氣工藝的可能方向，對工藝處理具有實際意義。
  3. General model c38 dc meters are portable taut - band suspended moving coil instruments with light - spot indication. the meters have the feature of extremely high in sensitity and small in consumpition being particularly suitable to be used for measuring weak electric quantity on dc circututs, also for testing the static paramenters of transistors as well for measuring the output of millivolt values of zhermocouple in the vacuun furnaces ( or hydrogen furnaces )

    C38型直流電表是磁電系張絲支承光點指示可攜式電表儀表具有極高的靈敏度，功耗小，特別適合弱電量直流電路測量及晶體管靜態參數測試用以及用做真空爐（或氧氣爐）中測量熱電偶的輸出毫伏值
  4. In this thesis we have expatiated on the methods of the c60 thin films preparation, and the process with vacuum evaporation. the effect, which was caused by different gas pressures and other element doped, on surface morphology, structure and optical properties of c60 films have been studied by using scanning electron microscopy ( sem ), ultraviolet visible optical absorption spectroscopy ( uv / vis ) ( type : uv - 240 ), ellipsometer and x - ray diffraction

    本論文闡述了用真空蒸鍍法制備c60薄膜的方法和過程，研究了在不同氣氛下生長和摻雜對c60薄膜的表面形貌、結構和光吸收特性的影響；用xl30fge型掃描電鏡對c60薄膜表面形貌進行觀察；用uv - 240型紫外可見光雙光束分光光度計進行紫外、可見光吸收測量；用橢偏儀對薄膜進行厚度和折射率測量；用x射線衍射對薄膜結構進行分析。
  5. The measure of ellipsometer shows : the refractive index value of c60 cluster films in gas atmosphere is smaller than that of vacuum c60 films ( our measurement result is 1. 94 ) and refractive index value of c60 cluster films in ar is larger than that in n2. both refractive index values are nearly the same in lower pressure ( about 1. 46 ), but decrease with increasing gas pressure

    橢偏儀測量表明：氣氛條件下制備的c60薄膜的折射率n比在真空條件下制備的c60薄膜的折射率（ 1 . 94 ）小；在低壓強條件下，不同氣氛中制備的樣品的折射率也幾乎相等；在一定的壓強范圍內，折射率隨著壓強的增大而減小。
  6. The best process for high quality tio _ ( 2 ) thin film deposited on k9 glass by reb is studied by using orthogonal test method, the se results indicate that the best process for tio _ ( 2 ) thin film deposition is the substrate temperature of 300, the total gas press in the chamber of 2 x 10 ~ 2pa and the deposition rate of 0. 2 nm - s - 1, of which the substrate temperature has influence on the optical properties of the deposited films notably

    文中首先以tio _ 2薄膜的折射率和消光系數為研究對象，採用l9正交試驗法研究了在k9玻璃上制備高光學質量tio _ 2薄膜的最佳工藝條件。橢圓偏振儀的測試結果表明，制備tio _ 2薄膜的最佳工藝條件為：基片溫度300 ，工作真空2 10 ~ （ - 2 ） pa ，沉積速率0 . 2nm ? s ~ （ - 1 ） ，其中基片溫度對薄膜光學常數的影響最大，該結果具有較好的可重現性。
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