真空結晶 的英文怎麼說

中文拼音 [zhēnkōngjiējīng]
真空結晶 英文
vacuum crystallization
  • 真 : Ⅰ形容詞（真實） true; genuine; real Ⅱ副詞1 （的確; 實在） really; truly; indeed 2 （清楚確實） cl...
  • 空 : 空Ⅰ形容詞（不包含什麼; 裏面沒有東西或沒有內容; 不切實際的） empty; hollow; void Ⅱ名詞1 （天空） s...
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 真空 : [物理學] vacuum; empty space; vacuo
  • 結晶 : 1 （析出晶體） crystallize2 （晶體） crystal 3 （成果） crystallization; fruit; product; quintess...
  1. But alq3 was used in oelds by vacuum evaporation mostly because of its poor dissolubility, and easily recrystallized from the oelds so that the oelds " stability decreased

    但是alq3溶解性差，一般都通過真空蒸鍍製作器件，此外它會在器件內因器件發熱發生重結晶從而導致器件穩定性下降。
  2. The course concentrates on circuits using the bipolar junction transistor, but the techniques that are studied can be equally applied to circuits using jfets, mosfets, mesfets, future exotic devices, or even vacuum tubes

    本課程集中講解使用雙極結晶體管的電路，但所學技術同樣適用於使用jfet ， mosfet ， mesfet ，未來的稀有裝置，甚至真空管的電路。
  3. Using jgp560c magnetron sputtering equipment, cu / ag film are deposited on cd1 - xznxte substrate by dc magnetron sputtering in order to get the influences of the main experiments parameters such as sputtering power, gas flow, vacuum air pressure, magnetoelectricity power and substrate temperature on deposition rate of film, discovered that dc sputtering power is the most key factor influencing the deposition rate

    在jgp560c型超高真空多功能磁控濺射鍍膜機上，採用直流磁控濺射法在cdznte晶體上制備出cu ag合金薄膜，揭示了氣體流量、直流濺射功率、勵磁電源功率、工作氣壓和襯底溫度等工藝參數對沉積速率的影響規律。結果表明濺射功率對沉積速率的影響最大，隨濺射功率的增大沉積速率快速增大。
  4. The novel vertical carrier - free linear cluster system phoebus for the economical deposition of amorphous and microcrystalline silicon light absorbers by pecvd ideally combines the strengths of proven vacuum production platforms to precisely focus on the needs of solar cell producers : process stability, productivity, yield, footprint, costs of ownership

    新的立式無載體線團系統」菲波斯」 （ phoebus ） ，以pecvd方法經濟地鍍膜無定形的和微晶硅吸光體，理想地結合各種證明可靠的真空生產平臺的優點來精確的聚焦于滿足太陽能電池生產者的需求:工藝的穩定性，生產效率，合格產量率，佔地面積和擁有運營的總成本
  5. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  6. When the thickness increases up to a critical value, about 30 nm, the spotty rheed pattern gradually changes to streaky pattern, and the rheed oscillation curve appears. the rheed pattern of the ultra thin lno film deposited in the relatively high oxygen pressure is streaky pattern. with pumping the oxygen pressure to the relatively low value, the streaky rheed pattern gradually changes to spotty one

    我們發現在較低的真空度下，即氧分壓處於2 10 - 4pa和3 10 - 3pa之間， lno晶格中的一個o2 -將會轉移兩個電子給兩個ni3 + ，並且移動到薄膜表面形成o2被泵抽走，從而導致鈣鈦礦結構的垮塌，其相應的rheed圖樣呈現出清晰而明亮的點，表明表面為較為粗糙的三維島狀結構。
  7. Hydraulic ejectors, made of cast iron or stainless steel, are widely used in vacuum and evaporation system to carry out vacuum evaporation, vacuum pumping, vacuum filtering, vacuum crystallizing, drying and deodorization etc. in the areas of sugar refinery, pharmaceutical, chemical, foodstuff, salt, monosodium glutamate, dairy, ferment, brewing, light industry and national defense

    水力噴射器分鑄鐵和不銹鋼兩種材質，應用極為廣泛，主要適用於真空與蒸發系統，進行真空蒸發、真空抽水、真空過濾、真空結晶、乾燥、脫臭等工藝，是製糖、制藥、化工、食品、制鹽、味精、牛奶、發酵、釀造、輕工、國防部門廣泛需要的設備。
  8. The tensile and compression experiment on bulk nanocrystalline ag prepared by igc method was carried on mt810 with different grain sizes and zwick 10tn2s machine at different strain rates under normal temperature respectively. the stain rate sensitivity m was found to be 0. 025, which was extremely lower than the ordinary values. also the work hardening exponent is very low

    本文從用惰性氣體蒸發冷凝和真空原位壓結法（ igc ）制備得到的直徑80mm ，厚度7 . 6mm的大尺寸納米晶金屬ag樣品上切割得到符合力學實驗要求的拉伸和壓縮試樣，在mts810和zwick精密力學測試機上分別精確測定了拉伸和壓縮應力?應變曲線與晶粒尺寸和應變速率的關系。
  9. The x - ray diffraction, scanning electronic microscope and the squid were used to characterize the properties of the mgb2 core in mgb2 / fe tapes and wires. the effect of the proportion of mg, b and sic as well as the sintering parameters on the phase formation, microstructure and the critical current densities of mgb2 / fe tapes and wires was discussed in details. the results showed that the high purity of mgb2 core could be synthesized by both the traditional vacuum sintering and the sparking plasma sintering and the vacuum sintering environment restrained the oxidation of mg effectively

    相對于傳統真空燒結， sps燒結方式成相速度快、樣品晶粒細小均勻、 mgb2超導芯緻密性好、晶間連接優良，因而sps燒結樣品的臨界電流密度明顯高於傳統真空燒結樣品，其中未摻雜的帶材樣品經過sps800 ， 15分鐘燒結后，自場下的臨界電流密度jc值在10k時達到8 . 64 105a / cm2 ，而且隨著測量溫度和外加磁場的增加， sps燒結樣品的臨界電流密度下降率比傳統真空燒結樣品緩慢，在20k ，自場時為5 . 97 105a / cm2 ， 20k ， 3t時，臨界電流密度值仍大於104a / cm2 。
  10. The results showed that the microstructure of as - deposited tbdyfe ii 1ms were amorphous and the crystal of tbfe2 were found in films after annealing at 500. annealing films in vaccum could improve the saturation magnetization ms and the susceptibility, decrease the coercivity and the saturaion field, and make the direction of the magnetic moments parallel to the film plane

    結果表明，制備態薄膜為非晶態結構，經過500真空退火熱處理后，薄膜出現了tbfe _ 2的結晶物，薄膜的矯頑力和外場的飽和磁場大大降低，飽和磁化強度增強，初始磁化率提高，易磁化軸轉向膜面。
  11. X - ray diffraction results revealed that the structure of as - deposited smco film was amorphous and crystallization happened after the films annealed at 500 in vacuum. the magnetic tests of smco thin films showed that its coercivity reduced with the increase of film ' s thickness while the ratio of mr / ms was opposite. the films " coercivity and mr / ms declined after it annealed at 500 because the machanism of magnetization were changed from domain wall nailing into magnetic nuclear forming

    研究結果表明，由於雜質fe的摻入降低了smco薄膜的磁性能；制備態smco薄膜為非晶態結構，矯頑力hc隨著薄膜厚度的增加而減小，剩磁比mr ms隨膜厚增加而增加；經過500真空退火熱處理后，薄膜出現smcos的結晶物，矯頑力hc降低， mr ms減小，磁化機制由疇壁釘扎類模型轉為形核類模型。
  12. The phase structure of different cu - fe thin films were studied by using grazing incidence x - ray analysis ( gixa ). the texture and residual stress of different cu - fe thin films were measured by scan of x - ray diffraction ( xrd ) and 2 scan with different. the thicknesses of different thin films were characterized by means of small angle x - ray scattering ( saxs ) technique. by using atomic force microscope ( afm ) measured surface roughness of thin films. the component of different thin film was characterized by energy disperse spectrum ( eds ) and x - ray fluorescence ( xrf ). the magnetic properties of cu - fe thin films were measured by means of vibrating sample magnetometer ( vsm ). in addition, the giant magnetoresistance ( gmr ) effects of different films were also measured. the original resistance of the film fabricated by a direction - current magnetron sputtering system is directly affected by bias voltage

    利用掠入射x射線分析（ gixa ）技術對不同cu - fe薄膜的相結構進行了研究;利用xrd掃描及不同角度的2掃描對薄膜進行了結晶織構及殘余應力分析;運用小角x射線散射（ saxs ）技術測量了薄膜的厚度;採用原子力顯微鏡（ afm ）觀察了薄膜的表面形貌;運用能量損失譜（ eds ）及x射線熒光光譜（ xrf ）對薄膜進行了成分標定;使用振動樣品磁強計測量了不同cu - fe過飽和固溶體薄膜的磁性能;最後利用自製的磁阻性能測試設備測量了真空磁場熱處理前後不同薄膜的巨磁阻值。
  13. The pressure switch is suitable for almost all liquid and gaseous mediums and is used in vacuum technology pump control, gas technology stock monitoring, leak detection, filter monitoring dirt detection, as well as a whole variety of measurement tasks in hydraulics and pneumatics, in machine, equipment and plant construction, in process technology and in building technology

    壓力開關幾乎適用於所有液體和氣體介質，可以用於真空技術氣泵控制氣體技術貯存量監測泄露探測過濾監測灰塵探測，也用於過程技術和建造技術的機器機械和設備製造中的所有液壓和氣壓測量任務。前置式設計使開關能用於高粘稠和結晶介質。
  14. After geometry optimization, their energy band structure, densities of states were calculated and analysised. we also calculated the model of doping cr, which can change the energy band structure of cdgeas2, the result is valuable for decreasing optical absorption. through the energy analysised, it was suggested that a germanium - on - arsenic anti - site defect was the most possible defect which may be associated with the 5. 5 micron absorption, the result of analysis are agreement with the research of epr, so the calculates are accurate

    運用密度泛函理論計算，建立純砷化鍺鎘晶體的結構模型並對之進行結構優化，使理論模型更加接近真實結構，從而研究純砷化鍺鎘晶體的能帶結構和態密度、光學性質;分別建立砷空位模型（ vas - cdgeas2 ） ，鍺占砷位模型（ ge / as - cdgeas2 ） ，分別計算它們的能帶結構、態密度、光學性質。
  15. The second harmonic produced by a q - switched nd : yag laser with wavelength e = 532 nanometers ( nm ), pulse width 0 nanoseconds ( ns ) and repetition frequency i = 1 hz was used to bombard a highly pure solid hexagonal bn ( h - bn ) target ( 96 % ), with diameter of 2cm. in a vacuum chamber, boron nitride ( bn ) film was deposited on the single - crystal silicon substrate

    利用高能脈沖激光（波長= 532nm ，頻率= 1赫茲，脈寬= 10納秒）在常溫下轟擊燒結的高純六方氮化硼（ h - bn ）靶，在真空反應室中將bn薄膜沉積在單晶硅基底上。
  16. The sem shows : the c60 thin films, which were prepared in vacuum condition, consist of spherical cluster and have an average diameter about of 20 ~ 50nm. while in gas condition, the average diameter from 50nm to 200nm, and the average diameter of particles increases with the increase of gas pressure

    Sem測量表明：真空條件下制備的c60薄膜表面粒子粒徑約20 50nm ；氣氛（氮氣和氬氣）條件制備的薄膜表面粒子粒徑為50 200nm ，並隨氣壓的增大而增大，表面結晶現象也隨氣壓增大而明顯。
  17. The effect of annealing condition such as temperature, time and vacuum on microstructure of vo2 films was studies. the crystalline vo2 films can be obtained after annealing at 450 3 hour in 10pa vacuum. the conductivity of films increases linearly with increasing the temperature

    對退火溫度和時間以及真空度的影響進行了研究，在低真空（ 10pa ） 450退火3小時后得到的vo _ 2薄膜，晶體顆粒呈長方柱狀，具有良好的結晶性能。
  18. Have been several key techniques of making dif - pressure sensors such as plane technics, minuteness engine machining, static sealing etc. in the paper in the intellectualized researching field there are two ways which are examine - form, curve simulanting, to carry out dif - pressure sensors non - linear self - emendating ; adopt the several curves approaching and curve simulating to achieve the aims of dif - pressure sensor error self compensation

    論文首先討論了差壓傳感器的設計原理，並對差壓傳感器中復合敏感晶元（差壓、靜壓、溫度）和整體結構進行了設計，還解決了差壓傳感器製作中的平面工藝、微機械加工、靜電封接及真空充油等關鍵技術。
  19. Surface morphology, phase constitution and biocompatibility of the material were analyzed and evaluated in this paper. titanium alloys were prepared by non - consumable vacuum arc smelting furnace. and the microstructures and the properties of titanium alloys were investigated

    採用非自耗真空電弧凝殼爐熔煉鈦及鈦合金，並對鈦合金的組織及性能進行觀察和測定，分析了電弧爐熔煉鈦合金的結晶特點。
  20. Zno nanowhiskers synthesized by oxidizing zn vapor at low pressure show different morphology in this study. according to fractal dimension theory, fractal dimension calculation program ( fdcp ) has been developed to calculate the fractal dimensions of zno nanowhiskers

    本文用高頻感應加熱的方法在低真空氣氛中制備出不同形態的納米zno晶須，使用tem和xrd來分析其結構和形貌，並利用fdcp程序來計算它們的分形維數。
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