矽圖 的英文怎麼說

中文拼音 [xītú]
矽圖 英文
sgi
  • 矽 : 名詞[化學] （硅的舊稱） silicon （si）
  • 圖 : Ⅰ名詞1 （繪畫表現出的形象; 圖畫） picture; chart; drawing; map 2 （計劃） plan; scheme; attempt 3...
  1. Real geek types have been known to cruise around silicon valley with a laptop and directional antenna, trying to pick up networks

    真正的電腦怪傑帶著便攜式電腦和定向天線在矽谷附近游蕩，試圖接入網路。
  2. In this paper, the flow pattern defects ( fpds ) were revealed by secco etchant and their shape, distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ). the relationship between etching time and the tip structure of fpds was also discussed. furthermore, by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar, the annihilation mechanism of fpds was discussed in this paper

    本文將cz硅單晶片在secco腐蝕液中擇優腐蝕后，用光學顯微鏡和原子力顯微鏡對流動圖形缺陷（ flowpatterndefects ， fpds ）在矽片中的形態、分佈及其端部的微觀結構進行了仔細地觀察和研究，並討論了腐蝕時間對fpds缺陷端部結構的影響；本文還通過研究ar氣氛下快速退火（ rapidthermalannealing ， rta ）對fpds缺陷密度的影響，初步探討了fpds的消除機理。
  3. The final ic is made by sequentially transferring the features from each mask, level by level, to the surface of the silicon wafer.

    按照順序從每一塊掩膜版上將圖形一層一層地轉移到矽片的表面，就制得了成品集成電路。
  4. Even the most optimistic proponents of ics believe that major innovations will be required to reach the ultimate operating limit of the silicon transistor : a length for functional features around 10 nanometers ( nm ), or about 30 atoms long

    即使是最樂觀的ic擁護者也認為，得有重要的創新，才能達到矽電晶體操作的最小尺寸極限：接近10奈米的圖案，或是差不多30個原子的長度。
  5. P - type silicon crystal plates have been adopted in the text, which are formed mask sio2 by heat - oxygenation. and figures are diverted by normal light etching technology

    本文採用p型單晶矽片，由熱氧化形成sio _ 2掩膜層，標準光刻工藝進行圖形轉移，用koh溶液濕法刻蝕製作倒四棱錐腐蝕坑列陣。
  6. Conventionally, this involves coating a silicon wafer with a thin layer of light - sensitive polymer, shining uv light onto it through a template, and then dissolving the affected areas to create a pattern

    和傳統方法一樣，先給矽片薄薄地塗上一層對光線十分敏感的聚合物，再隔著一個模板用紫外線照射矽片，然後溶解那些受到影響的區域，這樣就製成了一個圖案。
  7. Silicon valley turned white - hot on the world money map

    矽谷在世界圈錢地圖上變得白熱化。
  8. Lithography, as used in the manufacture of ics, is the process of transferring geometic shapes on a mask to the surface of a silicon wafer.

    光刻技術應用到集成電路製造中，就是將掩模版的幾何圖形轉移到矽片表面的工藝過程。
  9. So - called silicon, or solid - state, readers rely on tiny capacitors that sense a fingertip ' s topography

    所謂的矽晶（固態）辨識器，則是利用微小的電容器來感測指尖的指紋圖形。
  10. This method has some characters : during recording of the transmissive holograms the holographic grating placed in front of the holographic plate closefittingly is used as a spectroscope. the transmissive wave is served as the object wave and the diffraction wave through the holographic grating or the deflective reflect wave produced by the silicon slice is served as the reference wave, therefore the hologram is named as self - reference image hologram. the recording results are the off - axis holograms and the twin images can be separated successfully

    在記錄透射型全息圖時，將全息光柵緊貼置於記錄干板之前，而光柵起到了分光的作用，直透波作為全息圖的物光波，參考光是物光通過光柵后產生的衍射波；記錄反射型全息圖時將矽片置於記錄干板之後，利用反射矽片產生離軸參考光，因此系統僅需一束照明光束，參考光來自物光本身，因此稱之為自參考像全息圖。
  11. This paper mainly accomplished the following research : summarize the classify and application fields of four - probe testing technology ; take the square four - probe testing technology study by using the advantage of rymaszewski method in auto - eliminating the portrait wandering influence to induct ry method to square - probe testing method ; deeply study the influence of probe wandering to progressed ry method testing result ; complete the design of testing panel and testing circuit, realize the auto - testing of mono crystal wafer ; discuss the image enhancement and threshold selection problem in image identify, and finally accomplish the identify of probe pinpoint. the main new view points of the research : 1. it is the first time for applying image manipulation and analysis technique to the sheet resistance measurement, and achieving the auto - location function of the probe

    為此，本文開展了以下研究工作：綜述了四探針技術的分類以及應用范圍；對方形四探針測試技術進行了研究，利用rymaszewski法自動消除探針縱向游移影響的優點，將它應用於方形探針測試法中，並對探針游移對改進rymaszewski法測試結果的影響進行了深入探討，提出了用圖像識別技術監測測試進行的方法；完成了測試系統的測試平臺以及測試電路的設計，研製出具有圖像識別功能的斜置式方形探針分析儀一臺，實現了矽片電阻率測試的自動化；對圖像識別過程中涉及到的圖像增強和閾值選擇問題進行了論述，最終實現了對探針針尖的圖像識別以及探針測試結構的自動調整，保證了方形探針測試儀的測試精度。
  12. The exact design methods of switched - current filters are summarized, such as the director synthesis of z - plane, euler mapping, state variable analysis, matrix decomposition, and signal - flow - graph simulation of the lc and switched capacitor prototypes. at the same time, a modified left decomposition matrix method is proposed to overcome the usual problems of large silicon area, high sensitivity and component spreads by minimizing the input circuits. examples of switched - current low - pass, high - pass and band - pass filters are given to verify the feasibility of these methods

    總結分析了實現高精度開關電流濾波器設計的各種實用方法，包括z域綜合法、歐拉映射法、模擬無源lc網路和開關電容網路的狀態變量法、矩陣分解法和信號流圖轉置法，並對左分解法加以整理改進，提出一種更為簡潔的設計結構，通過減化輸入電路克服一般電路中存在的佔用矽片面積大、靈敏度高等問題。
  13. The most prevalent procedure is to use photolithography or electron - beam lithography to produce a pattern in a layer of photoresist on the surface of a silicon wafer

    最常用的步驟是用光蝕刻或電子束蝕刻法，在矽晶圓表面的光阻層上製作出圖案。
  14. 14 - segment honeycomb pattern spc ( silicon photocell ), 4 - segment flash - metering spc

    十四區域蜂巢式圖案矽光敏體（ spc ） 、四區域閃燈測光矽光敏體（ spc ）
  15. As more and more transistors are packed onto silicon integrated circuits ( ics ) during the next decade and a half, the lengths of the smallest chip features will shrink to nearly the molecular scale

    在未來的15年內，當越來越多的電晶體擠到矽積體電路（ ic ）后，晶片上圖案的最小長度將會縮小到接近分子的尺寸。
  16. At present, the problem in testing sheet resistance for micro - areas is that probes must be set up at the suitable locations by handwork. in order to know the wafer ' s impurity distributing, we need test many times, so will waste a lot of time. if the wafer ' s diameter would be 300mm, this problem will be more serious. in this paper, image analysis is introduced, through pre - processing and edge picking - up, the probe tips are recognized. then probe tips will be aligned respectively in two perpendicular directions through driving stepper motors. thus the distribution of sheet resistance for whole wafer is got by automatic testing and it offers information for detecting the impurity distribution and the diffusion uniformity

    這樣，完成200mm （ 8時）圓片雜質的擴散分佈需要對許多圖形進行測試，需要花費很長的時間，當測試300mm矽片時問題就更為突出。本文將圖象與視覺測量系統引入四探針測試系統中，對採集到的原始探針圖像進行預處理、邊緣提取等操作，以便實現探針針尖的識別，然後由電機控制實現探針的自動定位。這樣測試系統可以自動獲得全片的薄層電阻分佈，為超大規模集成電路檢測雜質分佈和擴散的均勻性提供信息。
  17. The basic purpose of these correction methods is to manufacture smaller cds using existing equipments and to preserve functional correspondence between the designed circuit and the manufactured circuit

    這些校正方法的基本目的都是為了在已有的生產工藝設備基礎上製造出更小的特徵尺寸，以使矽片上得到的圖形和設計的版圖相一致。
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