矽片化 的英文怎麼說

中文拼音 [xīpiānhuà]
矽片化 英文
siliconization
  • 矽 : 名詞[化學] （硅的舊稱） silicon （si）
  • 片 : 片構詞成分。
  1. The annihilation of the octahedron voids at the tips of fpds was divided two processes : ( 1 ) the oxide on the void was removed by the out - diffusion of oi in the shallow region, especially the oi aroud the void and by the entry of the interstitial si atomics. ( 2 ) the void without oxide shrinked by emitting vacances and the migration of silicon atoms from edge to the bottom of void

    Fpds端部八面體空洞的消失分為兩個階段： （一）覆蓋在空洞各個內壁上的氧化膜由於高溫下矽片表面區域的間隙氧原子，尤其是空洞型缺陷周圍的間隙氧原子的外擴散及自間隙硅原子的進入，而逐漸變薄直至最終消失。 （二）無氧化膜的空洞，在高溫下發出一個個空位，同時八面體空洞周圍的自間隙硅原子不斷的從空洞的邊緣遷移至空洞的底部，使空洞逐漸變淺直至最後消失。
  2. The method is to coat a wafer of silicon with a protective layer of silicon dioxide.

    其方法是往矽片上塗上一層二氧化硅防護膜。
  3. P - type silicon crystal plates have been adopted in the text, which are formed mask sio2 by heat - oxygenation. and figures are diverted by normal light etching technology

    本文採用p型單晶矽片，由熱氧化形成sio _ 2掩膜層，標準光刻工藝進行圖形轉移，用koh溶液濕法刻蝕製作倒四棱錐腐蝕坑列陣。
  4. Current researches, applications, preparation and structure of si3n4 are summarized in this paper. a new conclusion is drawn that silicon wafer can react with nitrogen at the temperature higher than 1100 and in super - pure nitrogen by direct - nitridation of silicon at the temperature from 800 to 1200. the prepared silicon nitride samples are tested by xps ( x - ray photoelectron spectroscopy ), sem ( scanning electron microscopy ), optical microscopy, xrd ( x - ray diffraction ) and edx ( energy dispersive x - ray analysis )

    通過矽片在800到1200各個溫度和各種氮氣氣氛下的氮化處理的實驗結果，報道了不同與其他研究者的氮化條件，矽片在氮氣保護的熱處理中的氮化條件為：高於1100的溫度和高純氮的氣氛條件，同時對該氮化硅薄膜進行了金相顯微鏡、掃描電鏡（ sem ） 、 x射線衍射儀（ xrd ） 、 x射線光電子譜（ xps ） 、 x射線能譜儀（ edx ）和抗氧化性等測試和分析。
  5. The effect of oxygen on nitridation of silicon by nitrogen is discussed in the theory of physical chemistry

    從理論上詳細地分析了二氧化硅氮化與矽片氮化的關系和氧分在氮化過程中對氮化的影響。
  6. The direct - nitridation of silicon wafer in nitrogen is very important because it involves in silicon wafer ' s heat treatment, ic technics and pulling monocrystal in nitrogen

    在矽片的熱處理、集成電路工藝和氮氣保護的拉晶過程中，都涉及到硅的氮化問題，因此矽片氮氣直接氮化的研究意義重大。
  7. At same time macroscopical and microcosmic mathematical model of nitridation are investigated. in this paper the thermodynamics of direct - nitridation, effect of temperature and nitrogen ambience on nitridaton and self - diffusion are discussed in the theory of physical chemistry in detail

    同時本文用物理化學的原理討論了矽片氮氣直接氮化的熱力學方程、氮化條件的理論根據和原子的自擴散，從理論上證明隨溫度升高氮化加劇，氣氛純度越高氮化越容易的結論。
  8. Surface chemical analysis - chemical methods for the collection of elements from the surface of silicon - wafer working reference materials and their determination by total - reflection x - ray fluorescence spectroscopy

    表面化學分析.從矽片工作標準物質表面採集元素的化學方法及其全反射x射線熒光光譜法的測定
  9. Films of the cnx nanotube were produced by thermal decomposition on fe - coated si substrates, and their low field emission properties have been investigated. a high - emission current density of 1. 28ma / cm2 for an applied field of 2. 54v / u m was achieved, implying cnx nanotubes have better electron field emitter properties than the films of carbon tubes and bcn tubes do under same experiment conditions

    860熱解乙二胺，在沉積有鐵催化劑的矽片上生長出cn _ x納米管薄膜，並進行了低場致電子發射特性測試，外加電場2 . 54v / m時，發射電流達到1 . 28ma / cm ~ 2 ，比相同實驗條件下制備出的碳管、硼碳氮管薄膜的場致電子發射性能優越。
  10. Silicon nitride ( normally si3n4 ) has been widely used in such fields as micro - electronics and optoelectronics as a promising film material because of its excellent property. many researches have been made on silicon nitride, especially on preparation for it with all kinds of cvd ( chemical vapor deposition ). but the growth mechanism and kinetics of direct - nitridation in nitrogen are not investigated in detail, especially few work has been done on direct - nitridation of silicon wafer in nitrogen during heat treatment

    氮化硅（ si _ 3n _ 4 ）具有許多特殊的優越性能，是一種前景廣闊的薄膜材料，並已廣泛應用於微電子、光電子領域，人們對此做了大量的研究，但主要集中在用各種化學氣相沉積的薄膜制備上，對直接氮化法的機理和動力學研究較少，特別是矽片在氮氣保護的熱處理條件下的直接氮化行為研究更少，甚至對矽片在熱處理條件下能否與惰性的氮氣發生反應等問題依然存在爭論。
  11. London - listed renesola does producewafers, but focuses onmonocrystalline wafers which are less effectivethan the multicrystallineingots and wafers that ldk produces

    在倫敦上市的浙江昱輝也生產矽片，但只是單晶硅矽片，這比江西賽維生產的多晶硅矽片和硅錠，光電轉化率要低。
  12. This paper mainly accomplished the following research : summarize the classify and application fields of four - probe testing technology ; take the square four - probe testing technology study by using the advantage of rymaszewski method in auto - eliminating the portrait wandering influence to induct ry method to square - probe testing method ; deeply study the influence of probe wandering to progressed ry method testing result ; complete the design of testing panel and testing circuit, realize the auto - testing of mono crystal wafer ; discuss the image enhancement and threshold selection problem in image identify, and finally accomplish the identify of probe pinpoint. the main new view points of the research : 1. it is the first time for applying image manipulation and analysis technique to the sheet resistance measurement, and achieving the auto - location function of the probe

    為此，本文開展了以下研究工作：綜述了四探針技術的分類以及應用范圍；對方形四探針測試技術進行了研究，利用rymaszewski法自動消除探針縱向游移影響的優點，將它應用於方形探針測試法中，並對探針游移對改進rymaszewski法測試結果的影響進行了深入探討，提出了用圖像識別技術監測測試進行的方法；完成了測試系統的測試平臺以及測試電路的設計，研製出具有圖像識別功能的斜置式方形探針分析儀一臺，實現了矽片電阻率測試的自動化；對圖像識別過程中涉及到的圖像增強和閾值選擇問題進行了論述，最終實現了對探針針尖的圖像識別以及探針測試結構的自動調整，保證了方形探針測試儀的測試精度。
  13. The exact design methods of switched - current filters are summarized, such as the director synthesis of z - plane, euler mapping, state variable analysis, matrix decomposition, and signal - flow - graph simulation of the lc and switched capacitor prototypes. at the same time, a modified left decomposition matrix method is proposed to overcome the usual problems of large silicon area, high sensitivity and component spreads by minimizing the input circuits. examples of switched - current low - pass, high - pass and band - pass filters are given to verify the feasibility of these methods

    總結分析了實現高精度開關電流濾波器設計的各種實用方法，包括z域綜合法、歐拉映射法、模擬無源lc網路和開關電容網路的狀態變量法、矩陣分解法和信號流圖轉置法，並對左分解法加以整理改進，提出一種更為簡潔的設計結構，通過減化輸入電路克服一般電路中存在的佔用矽片面積大、靈敏度高等問題。
  14. Samples are prepared at 1100 and 1200 for different time from 5 minutes to 4 hours to study direct - nitridation kinetics. the thickness of the silicon nitride films is measured by single - spot thickness system produced by filmetrics co. ltd. the direct - nitridation kinetics curve is attained and the maximum thickness of the silicon nitride film is about 50nm

    為研究矽片氮化動力學，在1100和1200的溫度下制備了從5分鐘到4小時的各個氮化時間的樣品，並採用了不同晶面取向的矽片和不同的矽片放置位置，用filmetrics公司生產的f20型膜厚測量儀測得各個樣品的厚度，得到了實際的氮化動力學曲線和氮化薄膜的最終膜厚約為50納米，氮氣曲線較好地符合了氣固反應類型的動力學曲線。
  15. In this paper, the condition of direction - nitridation, the kinetics and nitridation mechanism are discussed in experiment and theoretically

    本文研究了矽片在熱處理條件下的氮化條件和動力學，並從理論上探討氮化機理，得到了很好的結果。
  16. The n - type ps ( 80 ? cm - 100 ? cm ) had been immersed in the mixture of amine ( ( c2h5 ) 3n : c2h4 ( nh2 ) 2 = 3 : 2 ) for twenty minutes, then carried on rapid thermal oxidation ( rto ) through a quartz tube and oxidized in a floating oxygen ambience ( 0. 5 l / min ) at the temperature 400 for 30 s

    N型（ 80 - 100 ? cm ）矽片刻蝕后的多孔硅在胺液中浸泡20min ，然後在氧化爐中進行熱退火，退火溫度在400時， o _ 2流量為0 . 5l / min的條件下退火30秒，在紫外燈照射下，所得ps發藍白光。
  17. The result of experiment proves that the design and manufacture project for silicon magnetic - transistor is feasible completely, specially, in the course of manufacturing magnetic - transistor technique, anisotropic etching is applied and reliable technique project is provided in order to manufacturing silicon magnetic - transistor with rectangle - plank cubic construction, these technologies can be compatible to ic technology, integrated easily and there is a wide application field

    本文根據實驗結果，確認了該硅磁敏三極體設計、製作方案完全可行。尤其在硅磁敏三極體的製作工藝中採用了硅各向異性腐蝕技術，為實現在矽片上製造具有矩形板狀立體結構的硅磁敏三極體提供了可靠的技術方案。製作工藝不但能與ic工藝相兼容，而且便於集成化，將有廣泛的應用領域。
  18. The agreement includes complementary metal oxide semiconductor ( cmos ) and silicon - on - insulator ( soi ) technologies as well as advanced semiconductor research and design enablement transitioning at the 45 - nanometer generation

    該協議包括互補金屬氧化物半導體（ cmos ）以及絕緣矽片（ soi ）技術以及轉向45納米級別高端半導體的研究和設計。
  19. Test method for thickness and total thickness variation of silicon slices

    矽片厚度和總厚度變化測試方法
  20. Methods of measurement of thickness, thickness variation and bow for silicon wafer

    矽片厚度厚度變化及彎曲的測量方法
分享友人
分享到 Line

分享到臉書