硅光電管 的英文怎麼說

中文拼音 [guīguāngdiànguǎn]
硅光電管 英文
silicon photocell
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 光 : Ⅰ名詞1 （照耀在物體上、使人能看見物體的一種物質） light; ray 2 （景物） scenery 3 （光彩; 榮譽） ...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  1. Semiconductor optoelectronic devices. delail specification for type gt16 si. npn phototransistor

    半導體光電子器件gti6型硅npn光電晶體管詳細規范
  2. Dalian kerui economics trade co., ltd. sell tapes for bonding in industry, reclosable fasteners, adhesives, polish and grind material, anti - electrostatic and insulation tape america 3m company, heat shrinkable tubing, wire and cable, electrical thermal wire and system america raychem company, masterbatch hanna - wilson, silicone products ge toshiba company and electrostatic electronic hydrotreater, water tank self - cleaning sterilizer beijing enfi company

    公司經銷美國3m各種工業用單雙面膠帶尼搭扣粘接劑拋光研磨材料防靜電材料絕緣膠帶美國瑞侃公司單雙層熱縮管鉸鏈薄壁耐高溫導線電伴熱線及系統漢納威爾遜色母料ge東芝有機硅產品和各種靜電水處理器水箱自潔消毒器。
  3. The beam - test of china pin diodes at the cern sps accelerator produced satisfactory results. in addition, we studied the pin punch - through effect, and obtained the pin punch - through data with 18cm long pb wo4 crystal at the electron beam energies higher than 20gev for the first time, and these data gave valuable information to alice / phos

    在cern的sps加速器上的束流測試，得到比較滿意的結果；並對穿透效應做了實驗研究，首次獲得100gev粒子和20gev以上電子束的18厘米長pbwo4晶體探測器pin硅光管穿透效應實驗數據，為alice phos提供了有價值的參考資料。
  4. The produced silicon core pipe is widely used in conduit pipe of wire or cable

    生產的硅芯管廣泛用子通訊用電纜光纜護線套管。
  5. Hdpe cable silicone core pipe is mainly used in engineering services such as pipeline system of outdoor cable, public information network, company transmission system, wired cable network and highway communication

    Hdpe電纜硅芯管主要用於室外電纜和光纜的管道系統，公共信息網路，公司傳輸系統，有線電纜網路及高速公路通訊等工程設施。
  6. I - v testing of a single transistor has been carried out. the p - si film is prepared by ela, and electron mobility is calculated about 30cm2 / v

    對用激光晶化法制備的多晶硅薄膜所制備的p - si - tft單管進行了-測試，計算電子遷移率為約30cm ~ 2 v
  7. In this paper, we investigated the aligned carbon nanotube grown on anodic aluminum oxide film ( aao ) and silicon substrates. the products were characterized by tem, sem, afm and raman spectroscopy, and so on. the effects of substrate preparation and treatment on acn growth and post - growth modifications of can grown on acn were also investigated

    本研究組提出了合成定向納米碳管陣列酞菁銅復合光電薄膜的構想，本文主要研究多孔氧化鋁（ aao ）模板和硅基片上定向納米碳管的制備，用tem 、 sem 、 afm和拉曼光譜對納米碳管進行了表徵和分析，研究了模板制備和處理對納米碳管生長的影響以及定向納米碳管的后續修飾。
  8. The 256 photodiodes arrayed 4 quadrants sensor is designed and fabricated in 0. 6 u m double metal double poly standard cmos process

    本研究中的256光電管陣列四象限光電傳感器採用了上華0 . 6 m兩層金屬兩層多晶硅cmos標準工藝製造。
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