硅化處理 的英文怎麼說

中文拼音 [guīhuàchǔlǐ]
硅化處理 英文
siliconize
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 處 : 處名詞1 （地方） place 2 （方面; 某一點） part; point 3 （機關或機關里一個部門） department; offi...
  • 理 : Ⅰ名詞1 （物質組織的條紋） texture; grain （in wood skin etc ） 2 （道理;事理） reason; logic; tru...
  1. The structure evolution and reaction mechanism of silicon - iron composite powders treated at the temperature ranging from 700 c to 1200 c respectively were carefully investigated through xrd, sem, epma, dsc. it was found that the chemical formula, fe + si - fe ( si ) + fe3si ( si ), controls the reaction process, and the reaction mechanism of powder homogenization was clarified

    通過利用xrd ， sem ， epma ， dsc等多種測試手段，詳細研究了鐵硅復合粉末帶材在700 1200的熱處理溫度條件下的反應狀況及結構變化，明確了反應過程中的化學方程式： fe + si fe （ si ） + fe _ 3si （ si ） ，並解釋了各個熱處理溫度范圍內，鐵硅粉末均一化的反應機理。
  2. 4 the cleanout and the passivation of si surface was carried out by a two - step process to overcome the surface oxide layer and balance the charge between the substrate and epitaxy. by this way, the crystal quality and emission characteristic of zno thin films can be improved, which provide a way to resolve the native oxide layer of si substrate

    4 、通過用等離子體對硅襯底表面進行清洗和鈍化兩步處理，解決硅襯底表面的氧化層和界面電荷平衡問題，制備出了高質量的氧化鋅薄膜材料，找到了一條獲得了高質量的氧化鋅薄膜的新途徑。
  3. There are the production lines established of intermediate - frequency melting, silicasol shuck, precision casting and metal ceramic, and 250 universal devices suck asvacuum melting electric furnaces, high - temperature and intermediate - temperature heat treatment electric furnaces, digitai - control lathes, milling and drilling machines, coreless millers, spherical surface millers, standing milling machines and so on, lt has established the central measuring roomm physicallab, chemical lab, metallic phase lab, crack detection test lab, seat ring lab, rocker lab and ducgt trestle lab, our esported gas engine valve seat to america was rewarded the second prize in terms of sichuan high - quality product

    建有中頻熔煉真空熔煉硅膠溶模精密鑄造粉末冶金生產線。有中頻電爐真空熔練電爐高中溫熱處理電爐數控車床鉆銑床無芯磨外園磨立磨等通用設備250臺套。有中心計量室物理化學金相探傷檢測及座圈搖臂導管臺架實驗室。
  4. Among various fabrication techniques of thin film, the sol - gel process has gained much interest for the preparation of pzt thin film, due to ihe advantages of good homogeneity, easy control of composition, low in - ill i reaving temperature, easy formation of large area thin films pb ( zrxti : - k ) 0 :, ( pzt ) films were prepared on the ito coated glass plates and low resistor silicon wafer in sol - gel dip - coating process associated wi di heat treatment : at different temperatures and characterized by x - ray diffraction ( xrd ) and transmission electron microscopy ( tem ). lt is shown that the pzt ferroelectric thin films with ( 110 ) preferred orientation and well - crystallized perovskite structure can be obtained after annealing at 680 ? for 30 minutes on ito substrate and at 800 " c for lornin on silicon substrate

    Pzt的制備方法有很多，其中溶膠?凝膠（ sol - gel ）方法可以和集成電路（ ic ）光刻工藝相互兼容，處理溫度低，有大面積塗敷性能，能精確地控制組分，無需復雜的真空設備，成本低廉，所以對于集成鐵電薄膜電容的應用這種方法有很廣闊的前景。本文利用sol - gel技術在摻錫的in _ 2o _ 3透明導電薄膜（ ito ）襯底和低阻硅襯底上成功地制備了pzt鐵電薄膜。運用了x射線衍射， sawyer - tower電路和lcr電橋分別對薄膜的晶化溫度，結構和電學性能進行了測試。
  5. The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed

    本文通過化學腐蝕、光學顯微鏡、掃描電鏡（ sem ） 、透射電境（ tem ）等分析技術，對重摻砷硅單晶在單步退火工藝和內吸雜退火工藝中氧沉澱及誘生缺陷的形態，形核與熱處理溫度、時間的關系等進行了研究。
  6. For enhancing the soakage capability and the combine intension between inorganic films and stainless steel plate, and improving the reactivity of stainless steel, to enhance the combine intension between sca film and stainless steel plate, the stainless steel plates are oxidized. the experiment prepared two oxidized stainless steels in different oxidation degree, aa and ab, respectively used as experiment plates in silver doped tio2 or sio2 antibacterial stainless steel and silver doped sca antibacterial stainless steel

    為提高無機薄膜和不銹鋼基板之間的浸潤性和結合強度，以及為使不銹鋼基板具有更高反應活性，以提高有機硅烷薄膜與不銹鋼基板間的結合能力，對不銹鋼基板進行氧化處理，制備兩種氧化程度不同的不銹鋼： aa和ab ，分別作為摻銀tio _ 2 、 sio _ 2抗菌不銹鋼和摻銀有機硅烷抗菌不銹鋼的基板材料。
  7. The principle of alkalization treatment for silicon cleaning technology and the practice on 2 300 mw units in pingliang power plant have been presented

    摘要介紹堿化處理洗硅工藝的原理及平涼電廠2 300mw機組的洗硅實踐。
  8. Cold punching extrusion die of silicon steel of cold punching extrusion die and study on eompound infiltration strengthening

    硅鋼片冷沖凹模的選材與復合強化處理研究
  9. Hydrogen, fluorin, carbon and oxygen are familiar elements in ps confirmed by different experiments. porous silicon can radiate strong near infrared, visible and near ultraviolet light, but whole s band is most interested in

    經過陽極化處理后得到的多孔硅能發射較強的近紅外、可見和近紫外光，而人們最關注的是ps在整個可見光波段（ sband ）的發光。
  10. Ghg - electrical grade activated silica powder is produced by way of mingling on the basis of electrical grade silica powder. it has activt effect on surface & make silica powder mingled with resin, raise cohesive force between resin & silica powder, raise the water - resestance on the sunface and the compressive strength of pour object, reduce sediment, gradation & split, increase filler of silica powder, and replaced inpoted products on the producing line of imported dry type transfomer & high tension mutual induc tance equiment, it has been the best pouring insulate materual in electrical trade

    電工級活性硅微粉是在電工級硅微粉的基礎上進行偶聯化處理而製成，具有表面活性作用，能使用硅微粉與樹脂發生交聯，提高樹脂與硅微粉的粘結力和界面增水性，提高澆注體抗沖擊強度，減少沉澱、分層、開裂現象，增加硅微粉的填充量，在引進的乾式變壓器、高壓互感器生產線上已成功地代替了進口產品，成為電工行業理想的環氧澆注絕緣材料。
  11. In this experiment, we prepare hydrogenation by pecvd after deposition of silicon nitride thin film for gate insulator of tft

    本實驗在沉積柵氧化層后立即用pecvd進行多晶硅的氫化處理。
  12. On the other hand, the activity and selectivity can also be greatly promoted by silylation due to the enhancement of the surface hydrophobicity of the materials

    硅烷化處理增加材料表面的疏水性，能夠大幅度提高活性和選擇性。
  13. The surface modification with silicon coupling reagent to ultrafine silicon dioxide, which roots in waste production in fiber manufacturing, was investigated in this paper

    摘要以通信光纖生產中產生的超細二氧化硅顆粒廢料為原料，經水純化處理后，用硅烷類偶聯劑對其表面進行化學改性。
  14. Study on material determination of silicon steel sheet cool punching concave die and compound intensifying processing

    硅鋼片冷沖凹模的選材與復合強化處理研究
  15. In this paper, the nanometer - sized silica was organically grafted with tdi and ethylene glycol monobutyl ether, or by treated with silicohydride coupling agent ( k. h - 560 )

    本文分別用tdi與乙二醇單丁醚接枝法和硅烷偶聯劑kh - 560對納米sio _ 2進行有機化處理。
  16. Current researches, applications, preparation and structure of si3n4 are summarized in this paper. a new conclusion is drawn that silicon wafer can react with nitrogen at the temperature higher than 1100 and in super - pure nitrogen by direct - nitridation of silicon at the temperature from 800 to 1200. the prepared silicon nitride samples are tested by xps ( x - ray photoelectron spectroscopy ), sem ( scanning electron microscopy ), optical microscopy, xrd ( x - ray diffraction ) and edx ( energy dispersive x - ray analysis )

    通過矽片在800到1200各個溫度和各種氮氣氣氛下的氮化處理的實驗結果，報道了不同與其他研究者的氮化條件，矽片在氮氣保護的熱處理中的氮化條件為：高於1100的溫度和高純氮的氣氛條件，同時對該氮化硅薄膜進行了金相顯微鏡、掃描電鏡（ sem ） 、 x射線衍射儀（ xrd ） 、 x射線光電子譜（ xps ） 、 x射線能譜儀（ edx ）和抗氧化性等測試和分析。
  17. Single - walled carbon nanotubes ( swnts ) were opened and oxidized in the concentrated h2so4 / hno3 mixture ( volume ratio : 3 : 1 ), hydroxyl groups could be brought into the swnts after oxidation modification treatment, and the long - chain silane coupling agent was grafted onto swnts via hydroxyl - silanol route

    摘要採用混酸體系（濃硫酸濃硝酸體積比為3 / 1 ）對單壁碳納米管進行了氧化處理，並通過氧化處理后在單壁碳納米管表面生成的羥基官能團與長鏈硅烷偶聯劑進行反應，制備了表面有機修飾的單壁碳納米管。
  18. In this thesis, several new fluorescence carriers have been synthesized bearing a carbon chain with a terminal double bond introduced into the molecule and copolymerized with a monomer under uv irradiation on the silanized glass or quartz disk. the sensors prepared were studied. covalent immobilization effectively prevents the leakage of the carrier dye from the sensor membrane, a phenomenon that shortens the lifetime of ordinary optical sensors

    本論文合成了幾種含末端雙鍵、可共價固定的新型熒光化合物，並以此作為熒光指示劑，與膜基質單體在光引發劑作用下發生光聚反應共聚在經過硅烷化處理的石英或普通玻片上製成光極膜，制備了對一些物質有響應的熒光化學傳感器。
  19. Results show that the said technology can greatly shorten the silicon cleaning time duration, and the silicon cleaning to be perfectly thorough, economic benefits to be remarkable

    實施結果表明，採用堿化處理洗硅工藝可大大縮短洗硅時間，且洗硅徹底，經濟效益顯著。
  20. In order to study these two questions, high quality nanocrystalline zno thin films were prepared by thermal oxidation of zns thin films, which were deposited by using low pressure metalorganic chemical vapor deposition technique

    針對這兩方面問題我們做了如下研究：利用低壓金屬有機化學氣相沉積（ lp - mocvd ）工藝，首先在二氧化硅襯底上生長納米zns薄膜，然後，在不同溫度下進行熱氧化處理。
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