硅化法 的英文怎麼說

中文拼音 [guīhuàfǎ]
硅化法 英文
ihrigising
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 法 : Ⅰ名詞1 （由國家制定或認可的行為規則的總稱） law 2 （方法; 方式） way; method; mode; means 3 （標...
  1. Abrasive grains - chemical analysis of silicon carbide

    普通磨料碳化硅化學分析方法
  2. Determination of sio2 in alundum powder by colorimetry

    剛玉粉中二氧化硅的比色測定法
  3. Determination of cao, mgo, sio2, fe2o3, tio2 in alundum powder by icp - aes

    剛玉粉中氧化鈣氧化鎂二氧化硅三氧化二鐵二氧化鈦的電感耦合高頻等離子體發射光譜法測定
  4. Research on recovery of sodium oxide from sodium - bearing siliceous residus by hydration of cao

    水化法從鈉硅渣中回收氧化鈉的研究
  5. Test method for quantifying tungsten silicide semiconductor process films for composition and thickness

    定量分析硅化鎢半導體加工膜組分和厚度的標準試驗方法
  6. Chemical analysis of limestons for free silica

    石灰巖中游離二氧化硅化學分析方法
  7. Silicon / silicon oxide nanofilms and multilayer films were prepared by vacuum evaporation process followed by natural oxidation

    摘要用真空蒸發技術和自然氧化法在玻璃襯底上制備納米級的硅氧化硅薄膜和多層膜。
  8. ( 3 ) the free - standing porous silicon films with continuous porous structure were prepared on single crystal silicon wafer by the method of anodic oxidation and electrochemical etching - electropolishing, and firstly used as the anode materials for lithium ion secondary batteries. the capacities of lithium ions storage and the process of charge and discharge of this nano - silicon anode materials as well as the influence of the structure of ps on behavior of storing lithium ions were inspected at length. on the other hand, through the process of charge and discharge in cells, the lithium of light metal element could be electrochemically doped into ps at different doping levels

    胡勁松河北師死大學碩士學位論文（ 3 ）利用陽極氧化法在單晶硅基底上制備了多孔硅自支撐膜，並首次將這種具有連續多孔結構的硅材料用作了理離子電池的陽極材料，考察了這種納米級硅陽極的儲鉀性能和充放電過程，分析了材料結構對其儲理行為的影響；另一方面，利用這種電池充放電過程在多孔硅中電化學引入了不同點綴程度的輕金屬鉀元素，考察了鉀點綴對多孔硅自身結構，及至性質所帶來的影響，提供了一種通過電化學方法插入埋離子從而連續調整多孔硅發光性質的有效方法。
  9. Silicon nitride ( normally si3n4 ) has been widely used in such fields as micro - electronics and optoelectronics as a promising film material because of its excellent property. many researches have been made on silicon nitride, especially on preparation for it with all kinds of cvd ( chemical vapor deposition ). but the growth mechanism and kinetics of direct - nitridation in nitrogen are not investigated in detail, especially few work has been done on direct - nitridation of silicon wafer in nitrogen during heat treatment

    氮化硅（ si _ 3n _ 4 ）具有許多特殊的優越性能，是一種前景廣闊的薄膜材料，並已廣泛應用於微電子、光電子領域，人們對此做了大量的研究，但主要集中在用各種化學氣相沉積的薄膜制備上，對直接氮化法的機理和動力學研究較少，特別是矽片在氮氣保護的熱處理條件下的直接氮化行為研究更少，甚至對矽片在熱處理條件下能否與惰性的氮氣發生反應等問題依然存在爭論。
  10. Methods for chemical analysis of metallic silicon

    金屬硅化學分析方法
  11. Methods a randomized, controlled prospective clinical trial was carried out in 60 patients admitted in the department of neurosurgery, who required long - term use of an indwelling urinary catheter

    方法將需要留置導尿病人隨機分為全硅橡膠及硅化乳膠導尿管兩組，每組各為30例，分別檢測尿常規、記錄留置導尿管期間病人的感覺。
  12. Abstract : a device used to test the thermo - shock resistance performance of mosi2 heating element was introduced. and the designing methods of hardwares and softwares were related emphatically

    文摘:介紹了一種單片機控制的二硅化鉬發熱體耐熱沖擊性能測試臺的研製辦法，並著重闡述了測試系統硬體和軟體的設計方法。
  13. It is the first time to study the mechanism of interfacial reaction in sic / ti composites by quantum chemistry computation methods. a suitable method to calculate titanium carbide and silicide was found and the thermodynamic and dynamic data involved in interfacial reaction of sic / ti composites have been obtained

    首次將量子化學計算理論運用於金屬基復合材料界面反應的研究中，運用gaussian98量子化學計算程序，找到了適合於研究過渡族金屬ti的碳化物和硅化物的計算方法，獲得了sic ti基復合材料界面反應的熱力學和動力學數據。
  14. I - v testing of a single transistor has been carried out. the p - si film is prepared by ela, and electron mobility is calculated about 30cm2 / v

    對用激光晶化法制備的多晶硅薄膜所制備的p - si - tft單管進行了-測試，計算電子遷移率為約30cm ~ 2 v
  15. Analysis of water used in boiler and cooling system - determination of total silicon - photometric method by conversion with hydrofluoric acid for low silicon

    鍋爐用水和冷卻水分析方法全硅的測定低含量硅氫氟酸轉化法
  16. 2. from the si and er core ievel spectra and the si valence band spectrum a rather detailed description of the er / si ( 00l ) interface formation is presented. the following results can be extracted

    2鉺硅（ 001 ）界面、表面及鉺硅化物最初形成過程研究首先利用同步輻射光電子能譜方法研究了室溫下鉺在硅（ 001 ）表面的淀積和退火過程。
  17. On the basis of metal induced crystallization ( mic ) and ela, we have proposed a new method of metal induced excimer laser annealing ( mi - ela )

    在金屬誘導法制備多晶硅和激光晶化法制備多晶硅的基礎上，我們提出了一種新的多晶硅晶化法?金屬誘導下激光晶化法。
  18. Factors influencing pore structure of amorphous silica - alumina prepared by carbonization were investigated

    摘要系統考察了影響碳化法制備無定形硅鋁孔結構的因素。
  19. Abstract : the production, consumption and trade of industrial grade silicon at home and abroad are introduced, and the measures of expanding production of chemical silicon, popularizing and doing well in refining with oxygen blowing, utilizing coal instead of charcoal and utilizing carbon electrode etc. are proposed to raise industrial grade silicon enterprises benefits at the present situation

    文摘:介紹了國內外工業硅生產、消費和貿易狀況，並就目前形勢下如何提高工業硅企業的效益，提出了擴大化學用硅生產、普及和搞好氧化法精煉，以煤代替木炭和應用炭素電極等建議。
  20. Little grains nisi2with the characteristics of crystal - lattice - match with c - si, can induce p - si under laser radiation. by xrd, it becomes clear that not only higher crystallization degree has been obtained comparing to ela and mic in the same conditions, but also p - si with selective crystal orientation has been achieved under proper conditions with this method

    經xrd表徵，此方法比同條件下激光晶化法和金屬誘導法制備的多晶硅具有更高的晶化度，而且利用此方法在適當的條件下還能生長出具有優選晶向的多晶硅。
分享友人
分享到 Line

分享到臉書