硅單晶 的英文怎麼說

中文拼音 [guīdānjīng]
硅單晶 英文
silicon single crystal
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  1. Practice for conversion between resistivity and dopant density for boron - doped and phosphorus - doped silicon

    摻硼磣磷硅單晶電阻率與摻雜劑濃度換算規程
  2. In this paper, the flow pattern defects ( fpds ) were revealed by secco etchant and their shape, distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ). the relationship between etching time and the tip structure of fpds was also discussed. furthermore, by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar, the annihilation mechanism of fpds was discussed in this paper

    本文將cz硅單晶片在secco腐蝕液中擇優腐蝕后，用光學顯微鏡和原子力顯微鏡對流動圖形缺陷（ flowpatterndefects ， fpds ）在矽片中的形態、分佈及其端部的微觀結構進行了仔細地觀察和研究，並討論了腐蝕時間對fpds缺陷端部結構的影響；本文還通過研究ar氣氛下快速退火（ rapidthermalannealing ， rta ）對fpds缺陷密度的影響，初步探討了fpds的消除機理。
  3. Adopting ni / si and tin / ni / si structure, the nisi film on the < 100 > si substrate by the means of rta has been demonstrated in detail

    文中詳細的闡述了採用ni si和tin ni si結構通過rta在硅單晶< 100 >襯底上制備nisi薄膜的方法。
  4. Testing of materials for semiconductor technology - measurement of carrier lifetime in silicon single crystals - recombination carrier lifetime at low injection by photoconductivity method

    半導體工藝材料的試驗.硅單晶中載流子壽命的測量.用
  5. The dependence of oxygen precipitation and induced - defects in heavily as - doped silicon on heat treatment process was studied by annealing and ig process, chemical etching, scanning electron micrograph ( sem ) and transmission electron microscopy ( tem ). a developed ig technique was suggested and the mechanism of the influence of as on oxygen precipitation formation in heavily as - doped silicon was discussed

    本文通過化學腐蝕、光學顯微鏡、掃描電鏡（ sem ） 、透射電境（ tem ）等分析技術，對重摻砷硅單晶在單步退火工藝和內吸雜退火工藝中氧沉澱及誘生缺陷的形態，形核與熱處理溫度、時間的關系等進行了研究。
  6. It was found that nitrogen increased the fracture strength of silicon single crystal. we consider that the nitrogen may change the shockley band on silicon surface and form complex to influence the fracture procedure

    本文從硅材料的基本概念入手，闡述了硅單晶材料的脆性斷裂、脆塑轉變以及在熱處理過程中的翹曲研究，並通過這三個部分進行實驗。
  7. It seems the ncz silicon has a higher bdt temperature compared with cz silicon ' s. it is suggested that the elastic effects and the electronic effects of nitrogen doped in silicon made the bdt temperature higher. the observation of fracture surface showed that it was curves at high temperature in brittle fracture, but smooth planes at room temperature

    當溫度升高達到硅材料的脆塑轉變時，材料的斷裂強度有個很大的提高，但是首次發現含氮硅單晶卻不明顯，而且摻氮的硅單晶脆塑轉變溫度比普通單晶高，可能是氮的摻入改變了硅材料的內部晶體結構及電子結構。
  8. Standard slice of single crystal silicon resistivity

    硅單晶電阻率標準樣片
  9. Monocrystalline silicon polished wafers

    硅單晶拋光片
  10. Measuring of minority - carrier lifetime in silicon single crystal by photoconductive decay method

    用光電導衰減法測量硅單晶中少數載流子的壽命
  11. Finally, the effect of rapid thermal process ( rtp ) on oxygen precipitation in hb is investigated in this paper

    最後文章還系統研究了快速熱處理（ rtp ）對重摻硼硅單晶中氧沉澱的影響。
  12. Eliminating the nitrogen - oxygen complexes by rtp has not only creativity, but also have a significant practice sense

    對rtp消除微氮硅單晶中氮氧復合體的研究，不僅具有創新性，而且具有重要的實踐意義。
  13. The experimental results showed that high density of oxygen precipitation and induced - defects were formed after annealing of wafers at moderate and high temperatures

    重摻砷硅單晶在中高溫退火時形成密度較高的氧沉澱及誘生缺陷。
  14. The nucleation temperature of oxygen precipitation is about 750 c in lightly doped czsi, while the nucleation in heavily as - doped si occurred at a higher temperature ( 750 - 900 c )

    普通直拉硅氧沉澱在低溫750形核，重摻as硅單晶形核溫度較高，在750 - 900之間。
  15. The demand of the wafer ' s quality become higher too. the result of the final polishing determines the quality of silicon substrate for the final polishing is the last step in the polishing. in this paper, the mechanism and dynamics process of silicon polishing are systematically analyzed

    隨著集成電路向著甚大規模集成電路（ ulsi ）日新月異的發展，作為襯底材料的硅單晶片的尺寸越來越大，特徵尺寸也不斷減小，對硅襯底拋光片的拋光質量的要求也越來越高。
  16. Thus it is considered that the technique of dz formation by means of rtp may not be suitable for heavily boron - doping cz silicon. since the higher concentration vacancy could decrease the stress inducing by oxygen precipitates, the size of the oxygen precipitation with higher density was smaller in the hb si samples in comparison with the samples without rtp pre - annealing. moreover, as for the technique to generate dz by rtp in lightly boron - doping samples, it was found that the behavior of oxygen precipitation and dz was determined by the annealed temperature, followed annealing and ambient of rtf as well

    結果顯示，對于普通輕摻矽片能形成明顯的很寬的潔凈區的rtp預處理工藝，應用於重摻硼樣品時沒有潔凈區形成，所以rtp預處理獲得潔凈區的工藝不適用於重摻硼矽片，硼的大量摻雜對氧沉澱促進效果大於高濃度的空位對氧沉澱的洲排浙江大學碩士學位論文李春龍：直拉重摻硼硅單晶中氧沉澱的研究促進效果；大量空位的引入，有利於釋放氧沉澱生長過程的內應力，適當增加重摻硼樣品氧沉澱密度，減少其尺寸，並伴有層錯生成。
  17. An ion implanter without ion mass analyzer was applied to simulate the phi procedure to fabricate soi materials by implantation of water plasma ions. thin soi structure was successfully fabricated by the implanter using 50 ~ 90kev water plasma ion implantation with the dose ranging from 2 - 6. 5 + 017cm - 2 and, subsequently, the high temperature annealing

    我們使用無質量分析器的離子注入機，模擬等離子體離子注入過程，成功地在該注入機上用水等離子體離子注入制備出了界面陡峭、平整，表層硅單晶質量好，埋層厚度均勻的薄型soi材料。
  18. What ' s more, the amount of oxygen precipitates, dislocations in silicon and the orientation of the pressed surface also influence the fracture strength. stress - strain curves were studied at room temperature. in another experiment, brittle - ductile transition ( bdt ) of ncz and cz were studied for first time

    常溫下氮硅單晶（ ncz ）及普通硅單晶（ cz ）的斷裂強度研究發現，氮的摻入提高了機械性能，並且不同氧沉澱量、位錯的存在及不同晶向對硅材料機械強度也有較大影響。
  19. We consider that the complexes of bmon ( m, n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling. therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation

    在實驗事實的基礎上，我們認為在重摻硼硅單晶生長過程中， bmon （ m ， n 1 ）復合體或摻b引起的點缺陷能在晶體冷卻過程中的較高溫度階段形成，且在隨后的退火過程中能穩定存在，作為氧沉澱形核的核心，從而促進了氧沉澱，減小了大直徑硅單晶中void缺陷的尺寸，增加其密度。
  20. Heavily as - doped silicon substrates are adopted by many device manufactories because of higher as - doping density. therefore, quantitative determination of oxygen precipitation and induced - defects in heavily as - doped silicon is important to the realization of ig

    重摻砷硅襯底片正日益受到器件廠家的青睞，所以研究重摻砷硅單晶中的氧沉澱及誘生缺陷對實現重摻襯底的內吸除有重大意義。
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