硅層 的英文怎麼說

中文拼音 [guīcéng]
硅層 英文
silica
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 層 : i 量詞1 （用於重疊、積累的東西 如樓層、階層、地層） storey; tier; stratum 2 （用於可以分項分步的...
  1. The obtained polysilane - polyacrylate gradient films showed no macro - interface with the silicone content reducing gradually from the top surface to the bottom one. dma thermograms indicated that polysilane - polyacrylate gradient films contained two glass temperatures with their bands drifting from and their range extending much from each component. the good properties of waterproof, calorifics, and ultraviolet - absorption were also determined by dsc, uv and water contact angle measurements

    結果表明：有機硅聚合物-聚丙烯酸酯梯度膜有一個較寬的玻璃化轉變溫區，玻璃化轉變范圍相對組分材料的玻璃化轉變范圍發生了擴展：有機硅聚合物-聚甲基丙烯酸酯梯度膜具有較好的熱學性能；硅含量的提高有利於改善膜層的憎水性能和紫外吸收性能。
  2. 4 the cleanout and the passivation of si surface was carried out by a two - step process to overcome the surface oxide layer and balance the charge between the substrate and epitaxy. by this way, the crystal quality and emission characteristic of zno thin films can be improved, which provide a way to resolve the native oxide layer of si substrate

    4 、通過用等離子體對硅襯底表面進行清洗和鈍化兩步處理，解決硅襯底表面的氧化層和界面電荷平衡問題，制備出了高質量的氧化鋅薄膜材料，找到了一條獲得了高質量的氧化鋅薄膜的新途徑。
  3. Ore area locate on, silver factory ditch - ancient tomb ditch in west branch river set lower bench, stratigraphic succession, rock assemblage are different with circumference. most is a set of intraclast congeries silica rock. in search of it, its distribution range in the silver factory ditch - ancient tomb ditch

    礦區所在部位銀廠溝?古墓溝一帶，西岔河組下段地層中，地層層序、巖石組合特徵與周邊地區存在明顯的差異。主要為一套內碎屑堆積的硅質巖。
  4. The intense eluviation and weathering of soil with groundwater and run - off result in the enhancing of capacity of transference of some elements, such as si, al, fe, mn. the chemical reactions of the colloid particles in the soil water make those crannies or holes filled by some epigenetic clay minerals and quartz. then a great deal of white reticulate clay comes into being in the quaternary laterite of the dongting basin

    地下水和地表水強烈的淋溶作用使土壤中硅鋁鐵錳等元素的遷移能力增強，土壤膠體粒子之間的化學反應，使得這些孔隙空間在後期逐漸被次生黏土礦物和石英所充填，最終，在洞庭盆地第四系紅土地層中形成大量的蠕蟲狀和根狀白色網紋。
  5. The microstructure of as - deposit hypereutectic ai - si - cu - mg alloy is composed of particulate - shaped si particle and equiaxed grain a - al and few interstices

    多層噴射沉積高硅鋁合金的顯微組織由- al基體，初晶硅及孔隙組成。
  6. These ping pong - sized balls of fused quartz and silicon are 3. 8 cm across and never vary from a perfect sphere by more than 40 atomic layers

    這些如乒乓球般大小，以石英和硅融合而成的球體直徑約3 . 8厘米，偏離完美球體的程度不會多於40層原子。
  7. They do not have an illuvial horizon enriched with either silicate clay or with an amorphous mixture of aluminum and organic carbon

    沒有富含硅酸鹽粘土或鋁有機碳非晶質混合物的淀積層。
  8. Xiongcun copper - gold ore deposit is located in gangdese metallogenetic belt with a large scale. the ore body mainly exists in the second lithoid unit ' s tuffs and the third lithoid unit ' s dacite tufa of the cretaceous volcanic stratum, which are not only mother rock but also mineralized body

    雄村銅金礦床處于岡底斯成礦帶，礦床規模巨大，礦體主要賦存於白堊系火山巖地層第二巖性單元的黃鐵絹英巖化硅化凝灰巖和第三巖性單元英安質疑灰巖中，上述巖石既是賦礦圍巖又是礦化體。
  9. Environmental mineral fibre mainly points crude minerals like sepiolite and palygorskite species layer - chained magnesian silicate, which have excellent physical - chemical properties and are rare environmental mineral materials in the world nowadays because of the rigor of their form conditions. the single crystals of palygorskite are mostly acicular and fibrous, 30 - 80nm of crystal diameter, and are typical crude nano - rank materials

    環境礦物纖維主要指以海泡石、坡縷石類層鏈狀鎂質硅酸鹽為主的天然礦物，具有優良的物化性能，由於其形成條件苛刻，為世界性稀缺的環境礦物材料，其單晶多為針狀、纖維狀，晶體直徑為30 - 80nm ，屬典型的天然納米級材料。
  10. With regard to the protection system of inorganic zinc - rich primer + epoxy micaceous iron oxide intermediate + polysiloxane finish having been used for major bridges for the first time and the anti - rust and anti - slip inorganic zinc - rich coating used for the bolted and welded surfaces of the bridges, the paper describes the protection system and coating workmanship in considerable details from aspects of the material properties, construction methods and coating inspection

    針對在大型橋樑上首次應用的「無機富鋅底漆環氧雲鐵中間漆聚硅氧烷面漆」的防腐體系和栓接面採用的無機富鋅防銹防滑塗料，從材料特性、施工方法及塗層檢驗等幾方面做了較詳細的論述。
  11. The adsorption isotherm of neptunium on silica gel correspond to the form of langmuir isotherm. according to clausius - claperon equation, from the slope in inkd vs 1 / t plot, adsorption heat could be estimated. from the data of adsorption heat it is concluded that the adsorption of neptunium on silica gel in nitric acid solutions belongs to chemical adsorption and the adsorption process is an endothermic reaction

    三種價態的鎿在硅膠上吸附的等溫線符合蘭格繆爾吸附等溫線的形式，是單分子層吸附；根據克勞修斯-克拉柏龍方程，以1nkd對1 t作圖，通過直線斜率計算出吸附熱，從吸附熱的數據可判斷三種價態的鎿在硅膠上的吸附屬于化學吸附，是吸熱的過程；對npov ） 、 np （ v ）和np （ vd在硅膠上的吸附進行了比較，提出了三種價態的鋒在硅膠上吸附的機理。
  12. Ps radiation mechanism has been discussed and investigated for many years and many theoretical models have been proposed to describe photoluminescence in porous silicon, for instance quantum confinement effect model, polysilanes model, siloxen and its derivant, surfacial states model and quantum confinement - light center model etc. in addition, study status of ps at present is addressed and applied problems in some fields are analyzed in this section

    多年來，人們對多孔硅發光機理一直進行著堅持不懈的探討和研究，提出了許多種解釋多孔硅層（ psl ）發光的模型，典型的有下列幾種：量子限制模型、硅-氫鍵或多硅烷（ polysilanes ）的發光、硅氧烯及其衍生物的發光、表面態模型和量子限制-發光中心模型。
  13. It also has short protection and voltage overshot protection block. devices and ics based on esoi have the advantages of not only cheaper substrate, good performance of soi technology, but also obtaining a certain breakdown voltage and optimization of self - heating effect

    基於esoi的器件及集成電路不僅襯底材料制備工藝簡單，硅層厚度均勻性好，器件及電路特性具有soi結構的優點，而且還兼顧一定的耐壓，對自加熱效應也得到優化。
  14. Bonded wafers - two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer

    綁定晶圓片-兩個二過通片圓晶氧化硅層結合到一起，作為絕緣層。
  15. In light of them, matching pmosfet and nmosfet with strained si channel were designed. 2. the epitaxy layers including lt ( low temperature ) si grow technicsare discussed

    2 .研究了包括400下分子束外延法生長100nm的低溫硅層的各外延層生長技術。
  16. Up to present we have prepared the epitaxial simox substrate ( i layer 0. 37um, silicon layer 2. 8um ), and done the circuit design, process integration, device simulation and some layout design )

    本項目目前已完成了simox外延襯底的制備（ i層0 . 37um ，外延硅層2 . 8um ） ，以及功率開關集成電路的電路設計，工藝設計和部分版圖設計。
  17. After structure design aimed to high transconductance, parameters of device structure are modified in detail. the simulation results of soi nmos with strained si channel show great enhancements in drain current, effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet. the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide

    其次，根據器件參量對閾值電壓和輸出特性的影響，以提高器件的跨導和電流驅動能力為目的設計了strained - soimosfet器件結構，詳細分析柵極類型和柵氧化層厚度、應變硅層厚度、 ge組分、埋氧層深度和厚度以及摻雜濃度的取值，對器件進行優化設計。
  18. Silicone resin glass laminated sheets

    有機硅層壓玻璃布板
  19. The simulation results showed that the delamination might be observed when the moisture concentration was in the range of 50 % and 95 % of saturate concentration for non - coating, topside coating and both sides coating samples

    兩相共存的微孔洞還山於水分子爭奪高分子的氫鍵使高分子與晶元表面的二氧化硅層的結合減弱，而逐步擴展形成可觀察到的分層。
  20. The distributions of interface charge in the bottom of trenches and electric field in insulation layer were studied for the novel structure. the influences of insulation layer thickness and trench width on breakdown voltage were analyzed and compared with analytical results

    利用器件二維數值模擬軟體medici ，詳細研究局域電荷槽內的電荷分佈和埋二氧化硅層的電場分佈，以及埋二氧化硅厚度和槽寬對耐壓的影響。
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