The product of electric furnace fittings including : micro - computer program temperature control instrument 、 refractory brick ( ultra - light weight energy saving brick ) 、 resistance wire 、 electroheat belts 、 electrical heat tube 、 silicon carbide rod 、 furnace bottom plate 、 muffle tank 、 vacuum sealed fan 、 wind wheel 、 axis 、 substructure 、 bin seat 、 flat shape plate 、 box 、 panel 、 weatherstrip plate 、 return air plate 、 bin 、 connection box 、 educe rod 、 thermocouple 、 thyristor 、 porcelain pipe 、 crucible 、 furnace chamber 、 furnace frame 、 charging bin 、 substructure 、 pit furnace cover lifter framework ( sole design ) and otherwise
電爐配件產品包括：微電腦程序控溫儀、耐火磚（超輕質節能磚） 、電阻絲、電阻帶、電熱管、
硅碳棒、爐底板、馬弗罐、真空密封風機、風葉、軸、底座、料筐座、扁形板、箱體、面板、擋風板、回風板、料筐、爐
柵、接線盒、引出棒、熱電偶、可控
硅、瓷管、坩堝、爐膛、爐門、爐框、裝料筐、底座、井式爐蓋升降機構（獨家設計）等。
In the dissertation, the effects of the air slide - film damping on the capacitive accelerometers having different slot structures which are completely or partly etched, and fabricated by the anodic bonding between silicon and glass and bulk silicon micromachining process are researched by changing the distance between the moving structure and substrate, the thickness of the structure, the width of the completely etched slot structure, the depth of the partly etched slot structure according to the two well known air slide - film damping models
對于橫向運動的體微機械器件，其周圍空氣表現為滑膜阻尼。本文基於滑膜阻尼的兩個模型，通過改變振子與襯底的間距、振子的厚度、刻透的
柵槽的寬度、沒有刻透的
柵槽的深度等參數，研究了這些參數對
硅?玻璃鍵合工藝製作的體
硅微機械電容式傳感器阻尼特性的影響。
By comparing and analyzing the advantages and disadvantages of three kinds of voltage reference circuits, type of current density ratio compensation 、 weak inversion type and type of poly gate work function, a cascode structure of type of current density ratio compensation is chosen to form the core of voltage reference circuit designed in this paper. applying the negative feedback technology, an output buffer and multiply by - 2 - circuits are designed, which improve the current driving capability
然後通過比較和分析電流密度比補償型、弱反型工作型和多晶
硅柵功函數差型三種帶隙電壓基準源電路結構的優缺點，確定了電流密度比補償型共源共
柵結構作為本設計核心電路結構，運用負反饋技術設計了基準輸出緩沖電路、輸出電壓倍乘電路，改善了核心電路的帶負載能力和電流驅動能力。
In the paper, we introduced how to draw layout based on the standard of 0. 6 m, 5v cmos given by csc semiconductor ltd and finish the work in candence
晶元版圖的設計中採用了綠華半導體公司的0 . 6 m ， 5vcmos工藝庫，工藝基本特徵為多晶
硅柵，單層金屬布線。
A breakdown model of thin drift region ldmos with a step doping profile
器件多晶
硅柵量子效應的解析模型
It is believed that p - si tft will be the main type in the future panel display. among the process of manufacture p - si tft, the source and drain will have the superposition with grid for the reason of machine ’ s alignment error. the superposition will bring superposition capacitance and it will badly cut down the electric performance
在制備多晶
硅tft時，由於機器的套準誤差會在
柵極與源、漏極之間產生重疊部分，這樣就造成了
柵源、
柵漏之間的交疊電容，交疊電容的存在嚴重影響了多晶
硅tft的性能，而利用自對準工藝制備的多晶
硅tft則避免了交疊電容的產生。
In this experiment, we prepare hydrogenation by pecvd after deposition of silicon nitride thin film for gate insulator of tft
本實驗在沉積
柵氧化層后立即用pecvd進行多晶
硅的氫化處理。
Applying silicon gate technology, the chip has a lower value in power consumption than the products made by aluminum gate technology
由於採用
硅柵工藝，該晶元比市場上曾經流行過的鋁
柵產品功耗更低。
Secondly, the radiation effects of the system of silicon gate si / sio2 ( silicon gate nmos and pmos ) implanted bf2 are made a deep systematic study. especially, the relationship between threshold voltage shift ( vth and vit vot ) in radiated mos transistor and irradiation dose rate, irradiation dose, irradiation temperature, bias voltage, device structure as well as annealing condition is explored emphatically
在此基礎上，對bf _ 2 ~ +注入
硅柵si sio _ 2系統低劑量率輻照效應進行了深入系統的研究，著重研究了bf _ 2 ~ -注入mos管閾值電壓漂移（ vth和vit 、 vot ）與輻照劑量率、輻照總劑量、輻照溫度、偏置電場、器件結構以及退火條件的依賴關系。
Wirings of the poly layer are always utilized under the silicon grid technics. to control the macro - cell signal delay and improve signal integrality, the crossing among different nets must be averagely distributed to reduce the number of layer permutation. the metal layer wirings should be maximized and the length of poly layer wiring in each net should be minimized
硅柵工藝晶體管級布線利用多晶層走線，為了控制宏單元時延性能及改善信號完整性形態，關鍵是不同線網間交叉的均衡分配以減少走線的換層次數，最大化金屬層走線以及每一線網多晶層走線長度的有效控制。
Research on surface and grain boundary passivation mechanism obtained effects of surface recombination on crystalline silicon solar cell performance and the theoretical expression of grain boundary recombination velocity. the limit ratio of short - circuit current increment for anti - reflection coating utilization on solar cells was obtained. the crystalline silicon solar cell spectral response, contact resistance and minority carrier lifetime measurement systems were established
鈍化機理研究獲得了表面復合對不同表面摻雜濃度晶體
硅太陽電池性能的影響、表面和界面復合速度的理論表達式；研究得到了減反射膜對太陽電池短路電流增量比的極限；建立了太陽電池光譜響應、
柵線電極接觸電阻和少子壽命等測試系統。
By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes
研究利用常規的
硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構（
硅量子線、量子點，雙量子點和三叉指狀的金屬
柵結構） 。
Numerical analysis for phase error of silica - based arrayed waveguide grating
硅基二氧化
硅陣列波導光
柵相位誤差數值分析
After structure design aimed to high transconductance, parameters of device structure are modified in detail. the simulation results of soi nmos with strained si channel show great enhancements in drain current, effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet. the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide
其次，根據器件參量對閾值電壓和輸出特性的影響，以提高器件的跨導和電流驅動能力為目的設計了strained - soimosfet器件結構，詳細分析
柵極類型和
柵氧化層厚度、應變
硅層厚度、 ge組分、埋氧層深度和厚度以及摻雜濃度的取值，對器件進行優化設計。
A black opal worn near the heart on a necklace made of gold is said to ward off evil and protect travelers. it is regarded as an extremely lucky stone. it has reputed healing properties, especially the power to increase mental capacities such as creative imagination and other unused powers of the mind
貴蛋白石是由無數個極度的非晶質二氧化
硅小圓球組成，小圓球的直徑都相同或相近，並能在三維空間作整的排列，這些整排列的小球像光
柵一樣，當白光射在上面后即發生衍射，衍射成彩色的光譜。
When opal is worn as a pendant on a gold necklace and surrounded with 10 or 12 small diamonds it is believed to have excellent money - drawing power. a black opal worn near the heart on a necklace made of gold is said to ward off evil and protect travelers. it is regarded as an extremely lucky stone
貴蛋白石是由無數個極度的非晶質二氧化
硅小圓球組成，小圓球的直徑都相同或相近，並能在三維空間作整齊的排列，這些整齊排列的小球像光
柵一樣，當白光射在上面后即發生衍射，衍射成彩色的光譜。
Finally the method of preparation of p - si tft and some useful dates were given. the dissertation includes seven chapters. the first chapter introduces the development of tft ; the second chapter introduces the principle of tft and its structure ; the third chapter provides the reason of superposition capacitance between s, d and gate ; the fourth chapter introduce the deposition and test method of sinx ; the fifth chapter introduces the fabrication of p - si ; the sixth chapter studies the fabrication techniques of p - si tft and some parameters ; the seventh chapter is a conclusion of the research
本文一共分為七章:第一章介紹了本論文的研究背景、研究意義、主要工作以及國內外的研究進展;第二章介紹了tft的結構和工作原理;第三章介紹了
柵極與源、漏極之間疊加電容產生的原因和自對準工藝;第四章介紹了氮化
硅的制備方法和測試方法;第五章介紹了多晶
硅tft有源層的制備方法並對各種晶化機理做了介紹;第六章主要對利用自對準工藝制備tft的工藝進行研究，並對制備出來的樣品進行了測試;第七章對全文進行總結。
The paper is concerned with the eigen functions of optical fields in dielectrics, the theories of optical waveguide eigen mode, the characteristics of optical waveguides diffracted field, the theories of mode coupling in optical waveguides and the spectral response theories and simulating method for arrayed waveguide grating. in this paper, a set of beam propagation theory based on eigen modes analysis is set up which afforded theoretical basis for designing and analyzing awg devices. experiment of fabricating sio _ ( 2 ) layer by using porus silicon is also carried out in this paper, which is a new method for fabricating waveguide cladding layer
本文以設計陣列波導光
柵器件為目標，對介質波導光場的本徵波函數，光波導本徵模理論，光波導衍射場特性，光波導模式耦合理論和awg器件的光譜響應特性及模擬方法進行了深入研究，建立了一套基於本徵模式場分析的光波導光束傳輸理論，為波導器件的設計提供正確的理論基礎，並嘗試了利用多孔
硅生長厚的二氧化
硅，用於製作波導包層材料。
By computer simulation and calculation, the relation between the reflectivity and the structure parameters of such gratings are presented. these results show that a glass grating can achieve antireflection over almost the whole visible light waveband for unpolarized light, while a silicon grating with a columned grid substrate also can achieve low reflectance over as a broad field of view as a tapered silicon grating structure can, but it can be fabricated more simply
理論分析發現
硅基底的圓柱形網格光
柵能夠在比較大的視場獲得比較低的反射率，具有特定參數結構的低反射率
硅基底圓柱形網格光
柵可以獲得與專為大視場設計的金字塔形網格光
柵相同的視場角，但它的製作更容易，更簡單。
Silicon grating is a period construction fabricated on the silicon wafer by micro fabrication techniques as ultraviolet lithography and anisotropic etching
硅光柵是利用紫外光刻、各向異性腐蝕等硅微加工技術在矽片上製作的周期結構。
