硅晶體 的英文怎麼說

中文拼音 [guījīngtǐ]
硅晶體 英文
silicon crystal硅晶體二極體 silicon diode
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 晶體 : [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal
  1. A - type crystal structure potassium. it is a kind of aluminosilicate of alkali metal

    3a型分子篩是指a型晶體結構鉀型，是一種堿金屬的硅鋁酸鹽。
  2. Semiconductor discrete device. detail specification for pnp silicon low - power transistor for type 3cg110gp gt and gct classes

    半導體分立器件gp gt和gct級3cg110型pnp硅小功率晶體管.詳細規范
  3. Semiconductor discrete device. detail specification for npn silicon high - frequency low - power transistor for type 3dg130gp gt and gct classes

    半導體分立器件gp gt和gct級3dg130型npn硅高頻小功率晶體管.詳細規范
  4. Semiconductor discrete device. detail specification for npn silicon low - power hiht - reverse - voltage transistor for type 3dg182gp gt and gct classes

    半導體分立器件gp gt和gct級3dg182型npn硅小功率高反壓晶體管.詳細規范
  5. Environmental mineral fibre mainly points crude minerals like sepiolite and palygorskite species layer - chained magnesian silicate, which have excellent physical - chemical properties and are rare environmental mineral materials in the world nowadays because of the rigor of their form conditions. the single crystals of palygorskite are mostly acicular and fibrous, 30 - 80nm of crystal diameter, and are typical crude nano - rank materials

    環境礦物纖維主要指以海泡石、坡縷石類層鏈狀鎂質硅酸鹽為主的天然礦物，具有優良的物化性能，由於其形成條件苛刻，為世界性稀缺的環境礦物材料，其單晶多為針狀、纖維狀，晶體直徑為30 - 80nm ，屬典型的天然納米級材料。
  6. Semiconductor optoelectronic devices. delail specification for type gt16 si. npn phototransistor

    半導體光電子器件gti6型硅npn光電晶體管詳細規范
  7. The surface acoustic waves stress sensitive properties of piezoelectric crystal la3ga5sio14 base on stress sensitive coefficients

    基於應力敏感系數的硅酸鎵鑭晶體聲表面波應力敏感特性
  8. It seems the ncz silicon has a higher bdt temperature compared with cz silicon ' s. it is suggested that the elastic effects and the electronic effects of nitrogen doped in silicon made the bdt temperature higher. the observation of fracture surface showed that it was curves at high temperature in brittle fracture, but smooth planes at room temperature

    當溫度升高達到硅材料的脆塑轉變時，材料的斷裂強度有個很大的提高，但是首次發現含氮硅單晶卻不明顯，而且摻氮的硅單晶脆塑轉變溫度比普通單晶高，可能是氮的摻入改變了硅材料的內部晶體結構及電子結構。
  9. Device degradation behaviors of typical - sized n - type metal induced lateral crystallized polycrystalline silicon thin film transistors were investigated under two kinds of dc bias stresses : hot carrier stress and self - heating stress

    本文主要研究了典型尺寸的n型金屬誘導橫向結晶多晶硅薄膜晶體管在兩種常見的直流應力偏置下的退化現象:熱載流子退化和自加熱退化。
  10. Etc. heaters mosi2, sic for annealing furnace and single crystal furnace, high purity oxides high purity rear earth oxides, sio2, al2o3, tio2, ti2o3 and ti3o5 etc. for crystal growth and optical coatings. w, mo crucibles and w, mo products for crystal growth, fire - resistant materials and products for heat isolating during crystal growth

    Etc . ，退火爐及單晶爐用發熱體硅化鉬，炭化硅，晶體生長和光學鍍膜用高純氧化物稀土氧化物，二氧化硅，三氧化鋁，二氧化鈦，三氧化二鈦，五氧化三鈦等，生長晶體用鎢鉬坩堝及鎢鉬製品和保溫用各種耐火材料及製品。
  11. Test method for crystallographic perfection of silicon by preferential etch techniques

    硅晶體完整性化學擇優腐蝕檢驗方法
  12. The method of determining interstitial oxygen content in silicon by infrared absorption

    硅晶體中間隙氧含量的紅外吸收測量方法
  13. Testing method of resistivity for silicon crystals and silicon wafers with four - point probe

    用四點探針法對硅晶體和矽片電阻率的測試方法
  14. Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy

    用光致發光光譜法測定硅晶體中雜質濃度的試驗方法
  15. Testing of materials for semiconductor technology - determination of defect types and defect densities of silicon epitaxial layers

    半導體工藝材料的檢驗.硅晶體外延層缺陷種類和缺陷密
  16. In computers, these diodes are primarily germanium or silicon crystals

    在計算機中，這些二極體基本上是鍺或硅晶體二極體。
  17. Ti introduces the silicon - based transistor which soon eclipsed germaninum devices in production volume

    Ti公司開發硅晶體管，從而在生產量上迅速超過鍺晶體管。
  18. In this thesis, some fundamental topics on p - sic crystal growth such as the design of the crucible assembling system, the thermal field distribution and the liquid phase epitaxial growth of p - sic films deposited on si have been discussed. in brief, following major creative results have been obtained : 1

    本文探索碳化硅晶體生長技術的若干基本問題，特別對熱系統的設計和熱場分佈問題，以及用- sic薄膜在碳飽和硅熔體中進行液相外延生長的基本工藝問題等進行了研究，獲得以下主要創新結果： 1
  19. The finite element method ( fe '. i ) is adopted to analyze the effects of the numbers of coil turns, current intensity and current frequency upon the rate of joule heat generation in details. the thermo - radiation analytical countermeasures of various types are adopted to carry out the numerical analysis of the effects of the crucible with different shapes and sizes and the blind holes with different depths opened in the tops of crucibles as well as coil positions upon the thermal field distribution whereby solving the main problem of field the thermo - field design of the induction - heating sic crystal growth system. a new combination idea of the thermo - field design obtained by means of the united design of the thermo - insulator and blind holes has been presented

    採用有限元分析方法對線圈匝數、電流強度、電流頻率等對焦耳熱產生速率的影響進行了詳細的分析討論；採用不同的熱輻射分析策略，對不同坩堝形狀、坩堝頂部開設不同深度的盲孔以及線圈的位置等對熱場分佈的影響進行了數值分析，解決了感應加熱碳化硅晶體生長系統熱場設計的主要問題，提出了通過絕熱層與盲孔的聯合設計獲得所需熱場設計的思路，給出了根據軸向溫度梯度的波動對線圈位置實行動態調節以控制熱場的理論依據。
  20. By polarized light microscopy can be seen the etiology for most pneumoconioses ( even those in coal miners ) - - silica crystals

    偏振光顯微鏡可見大多數塵肺的病原（甚至對于那些煤礦工人） - -二氧化硅晶體。
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