硅氧化 的英文怎麼說

中文拼音 [guīyǎnghuà]
硅氧化 英文
siliconoxidation
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 氧 : 名詞[化學] （氣體元素） oxygen （o）
  • 氧化 : [化學] oxidize; oxidate; oxide; burning; rust; oxygenize; oxido-; oxy-
  1. Determination of sio2 in alundum powder by colorimetry

    剛玉粉中二氧化硅的比色測定法
  2. Determination of cao, mgo, sio2, fe2o3, tio2 in alundum powder by icp - aes

    剛玉粉中氧化鈣氧化鎂二氧化硅三氧化二鐵二氧化鈦的電感耦合高頻等離子體發射光譜法測定
  3. Workplace air. x - ray determination of the conventional alveolate fraction of crystalline silica. sampling by membrane filter

    工作場所空氣. x射線測定結晶二氧化硅的常規蜂窩狀部分.用薄膜過濾器取樣
  4. Workplace air. x - ray determination of the concentration of crystalline silica alveolate deposit. sampling by means of rotary cup device

    工作場所空氣. x射線測定結晶二氧化硅蜂窩狀沉積物的濃度.用轉動杯裝置取樣
  5. Other examples are cell damage caused by silica, asbestos and possibly some carcinogens.

    另外的例子是二氧化硅、石棉和可能的某些致癌物質所引起的細胞損害。
  6. The annihilation of the octahedron voids at the tips of fpds was divided two processes : ( 1 ) the oxide on the void was removed by the out - diffusion of oi in the shallow region, especially the oi aroud the void and by the entry of the interstitial si atomics. ( 2 ) the void without oxide shrinked by emitting vacances and the migration of silicon atoms from edge to the bottom of void

    Fpds端部八面體空洞的消失分為兩個階段： （一）覆蓋在空洞各個內壁上的氧化膜由於高溫下矽片表面區域的間隙氧原子，尤其是空洞型缺陷周圍的間隙氧原子的外擴散及自間隙硅原子的進入，而逐漸變薄直至最終消失。 （二）無氧化膜的空洞，在高溫下發出一個個空位，同時八面體空洞周圍的自間隙硅原子不斷的從空洞的邊緣遷移至空洞的底部，使空洞逐漸變淺直至最後消失。
  7. Silica pigment, benzene parazolone, oxalic acid catalyzer, accelerant, catalyst, deposit carbon powder, starch, paraacetaminophenetol - sulfonamide, sodiumpara - aminosalicylate ( pasna ), dalmato, p - thephalic acid, diethylbenzene - amine, titanium dioxide, acticarbon, sodium fluosilicate, fluorite, by - thiamine, silica gel powder, synthetic resin, sulfonic acid, polypropylene resin, aureomycin, pyrosodium silicate, gluchlorine acid coffee grounds, glucose, sodium sulfate, sulfide mineral, guound phosphate rock, bb, p. v. c.,

    M 、觸媒、沉澱炭粉、對乙酰氮基苯磺酰氨、對氨基水楊酸、哆耳瑪托、對苯二酸、二乙苯銨、二氧化鈦、活性碳、氟硅酸鈉、氟石礦、副產硫銨、硅膠粉未、合成樹脂、磷酸鈣、聚丙烯樹脂、金黴素、偏硅酸鈉、糠氯酸咖啡渣、口服葡萄糠、硫酸鈉、硫化礦、磷礦粉、蘭bb 、 p . v
  8. Method of analysis baryte for export. determinationof silicon dioxide

    出口重晶石分析方法.二氧化硅的測定
  9. Besides acting as agent of huzhou zhanwang pharmaceutical co., ltd. for a variety of adjuvant, we are also the agent for many imported adjuvant, such as new zealand wyndales lactose ; germany basfs vitamins and direct compression excipients ; france roquettes polyatomic alcohol ; germany sasols polyglycol ; switzerland givandans powdery flavoring essence ; usa cabots gas silica ; italy randi groups tartaric products ; uk crodas tween and span ; japan asahikaseis microcrystalline cellulose ; usa noveons carbopol resin, etc

    我公司除代理湖州展望化學藥業有限公司各種輔料，同時代理多家進口輔料，諸如：紐西蘭乳糖系列產品、德國巴斯夫公司維生素系列產品及直接壓片輔料；法國羅蓋特多元醇系列產品；德國沙索公司聚乙二醇系列產品；瑞士奇華頓粉末系列香精；美國卡博特公司氣相法二氧化硅；義大利拉第集團天然酒石酸系列產品；英國禾大公司吐溫，司盤系列；日本旭化成公司微晶纖維素系列產品；美國諾譽公司卡伯波樹脂系列等。
  10. The imported transparent glaze fired at lower temperature was analysed semi - quantitatively by adopting emission spectroscope. the stripping of lead and cadmium from this transparent glaze fired at lower temperature in ceramic product was determined by atomic absorption spectroscope. the effect of chemical composition on the stripping of lead and cadmium was analysed. upon the author s opinion, the overproof lead stripping from the imported transparent glaze fired at lower temperature can only be settled by adopting lead - free glaze instead of adopting low - lead prescription. the author succeeded in developing an excellent lead - free transparent glaze fired at the lower temperature of 1000 1050. the success is based on an inquiry into the feasibility of using such new agents of fusion as li2o and sro in replacement of pbo ; and on a study of the effects of the contents of sio2 ， al2o3 ， b2o3and other metallic oxides on such performances of glaze as coefficient of linear expansion, fusion temperature and transparency. it is also based on an analysis of coefficient of linear expansion of blank and glaze on an analysis of coefficient of linear expansion of blank and glaze on their correlation ; and on a study of technology for preparing glaze

    採用發射光譜儀對進口低溫透明釉進行半定量分析，並用原子吸收光譜儀測定其陶瓷製品的鉛、鎘的溶出量，分析化學成分對鉛、鎘溶出量的影響.結果表明，進口低溫透明釉採用低鉛配方不能解決鉛溶出量的超標問題，只有採用無鉛釉才能解決.探討用氧化鋰和氧化鍶等新型熔劑完全代替氧化鉛的工藝，研究釉料中氧化硅、氧化鋁、氧化硼和各種金屬氧化物的含量，對釉的線膨脹系數、熔融溫度和透明度等性能的影響.分析坯料、釉料的線膨脹系數及其相互關系和釉料制備的工藝，研製出優質的1000 1050低溫無鉛透明釉
  11. The paper is mainly focused on two fields. one is the formation of any thick porous silicon ( ps ) layers, which is content with 1c process. the other is the low - loss performance of passive elements fabricated on ps / oxidized porous silicon ( ops ) inter - layers under microwave operation

    本論文主要的研究內容分為兩個方面：其一是厚度可控的與ic工藝兼容的多孔硅膜的形成技術研究；其二是研究在多孔硅氧化多孔硅介質膜上制備無源器件的微波低損耗特性之可行性。
  12. The results show that : the fillers of sio2 based investment consist of sio2, al2o3 and mgo, and the binder is nh4h2po4 for sio2 based investment, the bulk density and the compression strength decrease, the apparent porosity and the thermal expansion increase, when the specimens are heated to 900 ; the fillers of al2o3 based investment consist of al2o3 and mgo, and the binder is nh4h2po4 ; for al2o3 based investment, the bulk density decreases and the apparent porosity increases when the specimens are heated to 900 ; the fillers of mgo based investment consist of mgo and al2o3, and the binder is ca cement ; for mgo based investment, the compression strength decreases and the thermal expansion increases greatly when the specimens are heated to 900

    結果表明：氧化硅系包埋料的骨料是氧化硅、氧化鋁、氧化鎂，結合劑為磷酸二氫銨，其900鍛燒后顯氣孔率增加，體積密度下降，耐壓強度降低，熱膨脹增大；氧化鋁系包埋料的骨料是氧化鋁和氧化鎂，結合劑為磷酸二氫銨，其900燒后顯氣孔率增加，體積密度下降，熱膨脹變化不大；氧化鎂系包埋料的骨料是氧化鎂和氧化鋁，結合劑是鋁酸鈣水泥，其900燒后耐壓強度明顯降低，熱膨脹明顯增大。
  13. Method for the determination of mgo, sio sub2 ;, cao. fe sub2 ; o sub3 ;, alo sub3 ;, mno, tio sub2 ; contents in magnesite for export - x - ray fluorescence spectrometric method

    出口鎂砂中的氧化鎂氧化硅氧化鈣氧化鐵氧化鋁氧化錳氧化鈦的測定x射線熒光光譜法
  14. Using silicon dioxide, magnesia, aluminum hydroxide to react with sulfonic acids, color fixatives under standard proportioning, through curing and drawing into thread - like form, this product is made with mechanical twisting as per specific speed and number of strands after drying treatment, featruing a certain tensile strength

    本品用二氧化硅、氧化鎂、氫氧化鋁同磺酸、固色劑等按標準配比反應，經固化抽制線狀，再經乾燥處理后，並按規定速數和股數，經機械加捻而成，並有一定的抗拉強度。
  15. The loss of coplanar wave - guides ( cpws ) on ps / ops layers with thickness about 10, and 70um respectively on low - resisitivity ( o. olflcm ) si has been studied, which are expected to increase the substrate resistivity and then to reduce its effective dielectric loss under the microwave operation

    01隻cn : ） _ l生長的多孔硅/氧化多孔硅厚膜為襯底制備的共平面波導（ cpw ）的微波插入損耗特性，其介質膜的厚度分別是10腳和70腳。
  16. Silicon / silicon oxide nanofilms and multilayer films were prepared by vacuum evaporation process followed by natural oxidation

    摘要用真空蒸發技術和自然氧化法在玻璃襯底上制備納米級的硅氧化硅薄膜和多層膜。
  17. The sem results showed that the surface of multilayer films is homogeneous and their thickness is in accord with that by weighing method

    Sem檢測表明，硅氧化硅多層膜的厚度和稱重法所估算的厚度相符，薄膜表面均勻。
  18. The u - i properties of the samples at room temperature and cryogenic temperature ( 77k ) were measured by three - point method, and it was found that there is an effect like negative resistance in such multilayer films

    本文採用三點法測定了常溫、低溫下的u - i特性，發現常溫、低溫下納米量級的硅氧化硅多層膜具有類似負阻的特性。
  19. Internal field generated by contact potential of gate electrode and substrate is considered to be responsible for the enhancement of c - v hysteresis. we first incorporate e - beam evaporation of hf with post thermal oxidation to fabricate hfo2 for the application of gate dielectrics

    硅化物主要是由沉積過微溯博士裕文搏要程中hf和出的互擴散引起的，而熱氧化可以將其轉化成具有較高介電常數的硅氧化物hfxsiyo 。
  20. The low - loss distributed mems phase shifter fabricated on ps layers is studied, but how to achieve better performance needs further works. thick ps / ops layers will be very attractive inter - layers for silicon 1c applications

    在硅基高頻ic應用中，多孔硅/氧化多孔硅厚膜將是一種非常有吸引力的介質膜。
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