硅氧層 的英文怎麼說

中文拼音 [guīyǎngcéng]
硅氧層 英文
silica layer
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 氧 : 名詞[化學] （氣體元素） oxygen （o）
  • 層 : i 量詞1 （用於重疊、積累的東西 如樓層、階層、地層） storey; tier; stratum 2 （用於可以分項分步的...
  1. 4 the cleanout and the passivation of si surface was carried out by a two - step process to overcome the surface oxide layer and balance the charge between the substrate and epitaxy. by this way, the crystal quality and emission characteristic of zno thin films can be improved, which provide a way to resolve the native oxide layer of si substrate

    4 、通過用等離子體對硅襯底表面進行清洗和鈍化兩步處理，解決硅襯底表面的氧化層和界面電荷平衡問題，制備出了高質量的氧化鋅薄膜材料，找到了一條獲得了高質量的氧化鋅薄膜的新途徑。
  2. With regard to the protection system of inorganic zinc - rich primer + epoxy micaceous iron oxide intermediate + polysiloxane finish having been used for major bridges for the first time and the anti - rust and anti - slip inorganic zinc - rich coating used for the bolted and welded surfaces of the bridges, the paper describes the protection system and coating workmanship in considerable details from aspects of the material properties, construction methods and coating inspection

    針對在大型橋樑上首次應用的「無機富鋅底漆環氧雲鐵中間漆聚硅氧烷面漆」的防腐體系和栓接面採用的無機富鋅防銹防滑塗料，從材料特性、施工方法及塗層檢驗等幾方面做了較詳細的論述。
  3. The method is to coat a wafer of silicon with a protective layer of silicon dioxide.

    其方法是往矽片上塗上一層二氧化硅防護膜。
  4. As one kind of si nanostructures, si - rich si02 films are the important si - based light - emitting materials. moreover, silicon is the leading semiconductor in the microelectronic industry. furthermore si02 films as passitive and insular layers are widely used in si device and integrated circuit. so si - rich films are considered suitable for optoelectronic applications

    另一種觀點認為納米硅薄膜中的可見光發射來自界面或介質層中的發光中心。還有人認為對于鑲嵌在sio _ 2中的納米晶粒來說，與氧有關的缺陷可能是導致可見光或藍綠光發射的主要原因。
  5. The silica coated nanometer particles after containning in n2 for 2h within 600 c is the crystallization form. thus it can sufficiently work the nano effect. the surface of the composite particles has no crystal water and no absorbing water. the anti - oxidation ability increase after coating

    鐵納米復合粒子為結晶態，納米粒子在6000c ，氮氣保護下，納米粒子不重新結晶，殼層二氧化硅包裹在納米鐵表面阻斷了納米粒子之間的重新原子排列。
  6. Ps radiation mechanism has been discussed and investigated for many years and many theoretical models have been proposed to describe photoluminescence in porous silicon, for instance quantum confinement effect model, polysilanes model, siloxen and its derivant, surfacial states model and quantum confinement - light center model etc. in addition, study status of ps at present is addressed and applied problems in some fields are analyzed in this section

    多年來，人們對多孔硅發光機理一直進行著堅持不懈的探討和研究，提出了許多種解釋多孔硅層（ psl ）發光的模型，典型的有下列幾種：量子限制模型、硅-氫鍵或多硅烷（ polysilanes ）的發光、硅氧烯及其衍生物的發光、表面態模型和量子限制-發光中心模型。
  7. Author analyzed the relationship between the length and the impurity concentration of drift region and thickness of buried oxide layer and thickness of soi and the charges of oxide layer and bias voltage of bulk and breakdown voltage and on - resistance by numerical simulation

    採用數值模擬分析方法，深入研究了漂移區長度、漂移區濃度、埋氧層厚度、頂層硅厚度、氧化層電荷以及襯底偏壓對resurf效應、擊穿電壓和導通電阻的影響。
  8. Influence of chemical surface treatment on charge storage stability for miniature si3n4 sio2 electret film

    化學表面處理對微型化的氮氧化硅駐極體層電荷儲存性能的影響
  9. Addition agent for mgo used on the silicon steel the agent can improve qualities of oriented silicon - steel coatings, enhance magnetic properties of silicon steel and decrease the finishing annealing emperature and time in manufacturing of oriented steel

    作用：專用於取向硅鋼片高溫退火隔離塗層，是國內新的取向硅鋼塗層用氧化鎂，該塗層具有國內第二代硅鋼氧化鎂的透氣性，又具有納米氧化鎂的活性。
  10. Ghg - electrical grade activated silica powder is produced by way of mingling on the basis of electrical grade silica powder. it has activt effect on surface & make silica powder mingled with resin, raise cohesive force between resin & silica powder, raise the water - resestance on the sunface and the compressive strength of pour object, reduce sediment, gradation & split, increase filler of silica powder, and replaced inpoted products on the producing line of imported dry type transfomer & high tension mutual induc tance equiment, it has been the best pouring insulate materual in electrical trade

    電工級活性硅微粉是在電工級硅微粉的基礎上進行偶聯化處理而製成，具有表面活性作用，能使用硅微粉與樹脂發生交聯，提高樹脂與硅微粉的粘結力和界面增水性，提高澆注體抗沖擊強度，減少沉澱、分層、開裂現象，增加硅微粉的填充量，在引進的乾式變壓器、高壓互感器生產線上已成功地代替了進口產品，成為電工行業理想的環氧澆注絕緣材料。
  11. The soi is of crystal quality and the box is uniform in thickness, with the interfaces of si / sioa / si smooth and sharp. we have systematically studied the dependence of the formed soi structure on the process parameters, such as ion energy, implantation dosage, substrate temperature, as well as the annealing temperature. with xtem, sims, srp, rbs, ir, raman, aes, xps and other characterization tools, it was found that a dose window at fixed energy for water plasma ion implantation to form high quality soi structure similar to the conventional simox process exists

    本論文還系統地研究了不同注入劑量、注入能量、注入時基底溫度以及退火溫度對所形成soi結構性能的影響，藉助xtem 、 sims 、 srp 、 rbs 、 ie 、 raman 、 aes 、 xps等測試分析手段，我們發現，與傳統注氧隔離（ simox ）技術類似，存在著「劑量窗口」形成優質的soi材料，但在水等離子體離子注入方式中soi材料結構質量對劑量變化更為敏感，隨著注入劑量的增大， soi材料的埋層厚度增大而表層硅厚度減小。
  12. Test methods of crystalline layered sodium disilicate - potassium fluosilicate volumetric methods for determination of silica dioxide content

    層狀結晶二硅酸鈉試驗方法氟硅酸鉀容量法測定二氧化硅含量
  13. The results showed that the restoration layer consisted of diamond - like carbon film ( dlc film ) and si - o glass film

    結果表明：摩擦表面的修復再生層為類金剛石膜和硅氧玻璃膜。
  14. Influences of the parameters on device performance such as thickness of strained si, ge content, channel doping and thickness of buried oxide are discussed based on given models. the models could be very helpful for device design

    根據所建立的模型，針對硅膜厚度、 ge組分、摻雜濃度和埋氧層厚度等參量對薄膜全耗盡型strained - soimosfet器件性能的影響進行詳細討論，為器件結構設計提供了理論基礎。
  15. Silicon / silicon oxide nanofilms and multilayer films were prepared by vacuum evaporation process followed by natural oxidation

    摘要用真空蒸發技術和自然氧化法在玻璃襯底上制備納米級的硅氧化硅薄膜和多層膜。
  16. The sem results showed that the surface of multilayer films is homogeneous and their thickness is in accord with that by weighing method

    Sem檢測表明，硅氧化硅多層膜的厚度和稱重法所估算的厚度相符，薄膜表面均勻。
  17. The u - i properties of the samples at room temperature and cryogenic temperature ( 77k ) were measured by three - point method, and it was found that there is an effect like negative resistance in such multilayer films

    本文採用三點法測定了常溫、低溫下的u - i特性，發現常溫、低溫下納米量級的硅氧化硅多層膜具有類似負阻的特性。
  18. In the thermal shock under air medium, a main damage form of 3d - c / sic was that oxidation of carbon fibers had been caused by peel - back of carborundum coating

    3d - c sic復合材料在空氣介質中的熱震損傷相應大致分作三階段，主要損傷為碳化硅塗層剝落而導致的碳纖維的氧化。
  19. After structure design aimed to high transconductance, parameters of device structure are modified in detail. the simulation results of soi nmos with strained si channel show great enhancements in drain current, effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet. the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide

    其次，根據器件參量對閾值電壓和輸出特性的影響，以提高器件的跨導和電流驅動能力為目的設計了strained - soimosfet器件結構，詳細分析柵極類型和柵氧化層厚度、應變硅層厚度、 ge組分、埋氧層深度和厚度以及摻雜濃度的取值，對器件進行優化設計。
  20. Latterly, it coupled with ultraviolet absorption spectroscopy ( uvas ), capillary electrophoresis ( ce ) and other apparatuses. up to date, many experimental coatings were prepared and investigated for a wide range of applications

    纖維塗層是spme的核心部位，常用的塗層材料多為液相聚合物，如聚二甲基硅氧烷（ pdms ） 、聚丙烯酸酯（ pa ）等。
分享友人
分享到 Line

分享到臉書