硅腐蝕液 的英文怎麼說
中文拼音 [guīfǔshíyè]
硅腐蝕液
英文
silicon etch solution-
In this paper, the flow pattern defects ( fpds ) were revealed by secco etchant and their shape, distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ). the relationship between etching time and the tip structure of fpds was also discussed. furthermore, by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar, the annihilation mechanism of fpds was discussed in this paper
本文將cz硅單晶片在secco腐蝕液中擇優腐蝕后，用光學顯微鏡和原子力顯微鏡對流動圖形缺陷（ flowpatterndefects ， fpds ）在矽片中的形態、分佈及其端部的微觀結構進行了仔細地觀察和研究，並討論了腐蝕時間對fpds缺陷端部結構的影響；本文還通過研究ar氣氛下快速退火（ rapidthermalannealing ， rta ）對fpds缺陷密度的影響，初步探討了fpds的消除機理。In the third chapter, the influence of current density, solution concentration, erosion time and aging in ambient air on the pl spectra of ps suggests that peak would blue shift with current density increasing, and with erosion time and aging time prolonging ; with the increasing of solution concentration, peaks would red shift when solution concentration less than 1 : 1 but blue shift when solution concentration greater than 1 : 1. above phenomena can be explained by quantum confinement and light center model, but do not deny the action of si - h bonding and defect on the surface in the process of photoluminescence. at present, radiation mechanism is still one of the primary problems in the study of ps
在第z三章中；通過對比，分析了電流密度、陽極化時間、溶液濃度以及自i然氧化時間對多孔硅光致發光光譜的影響，認為在一定的范圍內，多i孔硅的發光峰位會隨電流密度的增大而藍移，要獲得較強的發光，需z要選擇合適的電流密度；隨著腐蝕時間的延長，多孔硅的發光峰位會i發生藍移；當f酸的濃度較小q ： 1 ）時，峰位隨濃度的增大表現為向i低能移動；而當f酸的濃度較大河山時，峰位隨濃度的增大則表現z為移向高能；多孔硅在空氣中自然氧化；其發光峰位發生藍移，而強i度隨放置時間的延長而降低。As the isotropic etching being related to the resistivity of the si material and combining the practical need of the solar cell production, the paper emphasis on the etching of the multicrystal si with resistivity of about 1. cm. the results : ( 1 ) reflectance characteristics the appropriate etching solutions has led to a reduction of the total integrated reflectance to 5. 7 %, which is quite comparable with conventionally pretextured si surface covered by a double layer arc
由於以hf + hno _ 3 + h _ 2o為溶液各向同性腐蝕與矽片的摻雜濃度有關，結合生產太陽電池的實際需要，本文重點研究了電阻率1 . cm左右的多晶硅的腐蝕情況，結果如下： （ 1 ）反射特性在適當的hf + hno _ 3 + h _ 2o溶液中制備的多晶硅電池的絨面，其反射率降到了5 . 7 。In order to make integration of theory with practice, a lot of experiments have been done. mask - making technology, photoetching and wet - etching processes have been optimized. the author also presents the application and commercial value of silicon v - groove arrays
在實踐上，對製作工藝積極探索，提出新的制備硅掩蔽膜的工藝方案，對影響光刻質量的因素深入分析，試驗摸索出適用於v型槽的各向異性濕法腐蝕的腐蝕液配方，獨立優化設計了製作硅v型槽的相關工藝，製作出高質量的硅v型槽。The corrosion behavior of porous silicon in hf / h2o2 solution has been studied. it is found that the inner corrosion of porous silicon takes precedence, that is, the solution enters the pores through capillary and the whole porous silicon collapses because of the simultaneous corrosion of the silicon pillars
研究了多孔硅在hf / h _ 2o _ 2溶液中的腐蝕行為，發現多孔硅的腐蝕以孔內腐蝕為主，腐蝕液通過毛細效應進入納米孔內，孔壁被腐蝕掉后使得多孔硅整層同時坍塌。So the mirror and mechanical part can be fabricated in a one - level mask step by bulk micromachning of ( 100 ) with koh etching. we can on off the light path and switch the light exchange by controlling the movement of mirror
本論文使用傳統的koh腐蝕液，利用硅材料的各向異性的特點，加工出了垂直於襯底表面的微鏡結構，利用這種微鏡結構可以完成光線的切換，實現光路的開關功能。For example, the silicon is etched anisotropically in the koh solution, the lucent al film is made with the magnetron sputtering system, the pressure hole is drilled by the supersonic stiletto machine and the silicon and the glass are bonded with electrostatic bonding setup
例如， koh溶液對硅的各向異性腐蝕，磁控濺射臺製作光亮的鋁膜，超聲打孔機製作導壓孔，靜電鍵合裝置對硅島膜與玻璃極板的陽極封接等等。The corrosion rate of porous silicon in hf / h2o2 solution is several orders higher than that of bulk silicon
多孔硅在hf / h _ 2o _ 2溶液中的腐蝕速率比體硅的高幾個數量級。Study on corrosion resisting performance of three metallic materials in sicl4 solutions
三種金屬材料在四氯化硅溶液中的腐蝕性能研究分享友人