硅鋁率 的英文怎麼說

中文拼音 [guīlǚlǜ]
硅鋁率 英文
ratio of silica alumina
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  • 鋁 : 名詞[化學] aluminium （13號元素, 符號al）
  • 率 : 率名詞（比值） rate; ratio; proportion
  1. The results show that under the same lapping conditions the si3 n4 ball has the lowest material removal rate and the best roundness and roughness, followed by zro2, al2o3, and sic ball

    結果表明：在相同的研磨條件下，具有長柱狀晶粒的氮化硅陶瓷球加工速率最低，但圓度和表面粗糙度最容易控制；氧化鋯和氧化鋁陶瓷球表面質量次之，碳化硅陶瓷球加工速率最高，圓度和表面粗糙度最難控制。
  2. Aluminum pipe heater uses aluminum pipe as carrier, common aluminum heat tube for insulation with silicon rubber max temperature below 150c. put wire heating component in aluminum pipe to form different shape components with max temperature below 150c. it have two types 4. 5, 6. 35 by outer diameter. suggest to use the power below 35w m and we can design specially for the bigger power

    以鋁管做載體，將硅橡膠加熱線置於鋁管內而製成的各種形狀的電加熱組件，最高使用溫度在150以下。根據鋁管外徑可分為4 . 5 6 . 35兩種類型。建議設計功率小於35w m 。
  3. The results show that : the fillers of sio2 based investment consist of sio2, al2o3 and mgo, and the binder is nh4h2po4 for sio2 based investment, the bulk density and the compression strength decrease, the apparent porosity and the thermal expansion increase, when the specimens are heated to 900 ; the fillers of al2o3 based investment consist of al2o3 and mgo, and the binder is nh4h2po4 ; for al2o3 based investment, the bulk density decreases and the apparent porosity increases when the specimens are heated to 900 ; the fillers of mgo based investment consist of mgo and al2o3, and the binder is ca cement ; for mgo based investment, the compression strength decreases and the thermal expansion increases greatly when the specimens are heated to 900

    結果表明：氧化硅系包埋料的骨料是氧化硅、氧化鋁、氧化鎂，結合劑為磷酸二氫銨，其900鍛燒后顯氣孔率增加，體積密度下降，耐壓強度降低，熱膨脹增大；氧化鋁系包埋料的骨料是氧化鋁和氧化鎂，結合劑為磷酸二氫銨，其900燒后顯氣孔率增加，體積密度下降，熱膨脹變化不大；氧化鎂系包埋料的骨料是氧化鎂和氧化鋁，結合劑是鋁酸鈣水泥，其900燒后耐壓強度明顯降低，熱膨脹明顯增大。
  4. At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency

    在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。
  5. Compared with carbon, silicon nitride bonded silicon carbide has better oxidation resistance and bigger resistance ratio, which make it be a perfect line material of al electrolysis cell

    在鋁電解方面，氮化硅結合碳化硅遠較陰極碳塊耐腐蝕、抗氧化、電阻率高，是理想的電解槽側壁內襯材料。
  6. The results show that with the doping of some metal ( such as al ), the metal elements will exist by the form of atom clusters by adjusting the sputtering parameters. it should sharply increase the intensity of el and not change the luminescence centers

    結果表明在硅基薄膜中摻入適量的金屬（例如：鋁） ，並使其以團簇的形式均勻彌散在薄膜中，有可能既不改變薄膜的發光中心，又可大大提高其發光效率。
  7. It does n ' t react with nonferrous metal and has a high thermal conductivity rate. its properties of thermal shock resistance, scour resistance and corrosion resistance are very excellent. so silicon nitride bonded silicon carbide is a eximious refractory of al, cu, zn, mg melting field

    氮化硅結合碳化硅是近年來發展起來的特種高溫結構陶瓷材料，該材料不與有色金屬熔體潤濕，導熱率高、抗熱震性好、抗沖刷、抗金屬蒸汽侵蝕，是優質的鋁、銅、鎂合金熔煉及鋅冶煉行業用陶瓷材料。
  8. In this paper, finite element software ansys is used to simulate the thermal conductivity and pressureless infiltration technique is used to produce aluminum infiltrated silicon carbide composite with high volume fraction of sic. the influence of interfacial thickness and temperature on thermal conductivity and cte have been investigated and analysed

    本文採用有限元軟體ansys對鋁滲碳化硅復合材料的有效熱導率進行了數值模擬，用無壓浸滲法制備了高體積分數的鋁滲碳化硅復合材料，研究了界面層厚度和溫度等對鋁滲碳化硅復合材料的熱導率和熱膨脹系數的影響，並進行了分析。
  9. Consumers successively plunged a large number of silicon controlled commuted devices ( such as steel rolling 、 electrized locomotive 、 aluminium electrolysed devices etc ) and smelting devices to improve their produced efficiency or to save energy. on the one hand it is good for consumers, on the other hand it will arouse the fluctuation of voltage and frequency and it will result in the collision of the active and reactance capacity. meanwhile these nonlinear loads bring much harmonic into the electric network which deteriorate the quality of power supply and hazard the online device enormously

    用電部門為了提高生產效益、節約能源，在大電網中相繼出現了大量的可控硅整流裝置（如軋鋼、電氣化機車、鋁加工電解設備等）以及冶煉設備，這些設備的投入使用對節能有一定好處，但給電網造成有、無功沖擊，引起電壓和頻率的波動，同時，這些非線性負荷向電網注入大量諧波，大大惡化了供電系統的電能質量，給用電設備帶來了極大的危害。
  10. Gfm series solar modules are made of high efficiency solar cells in series or in parallel, high transmission rate and low iron tempered glass, anti - aging eva and high flame resistant tpt by hotlamination, with andized aluminum alloy frame. products have high efficiency, long life, easy installation, high resistance against wind pressure and hail impact etc advantages

    Gfm系列太陽能電池組件由高效晶體硅電池片串並聯，用高透光率低鐵鋼化玻璃、抗老化eva和優良的耐火性tpt熱壓密封而成，外加陽極化優質鋁合金邊框，具有效率高、壽命長、安裝方便、抗風、抗冰雹能力強的特性。
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