硅雜質 的英文怎麼說
中文拼音 [guīzázhí]
硅雜質
英文
siliceous impurity-
Silica, in fact, is a desirable impurity because it is one of the reactants.
硅石實際上是一種有用的雜質，因為它是一種反應劑。Abstract : to increase industrial grade silicon product quality, bottom blowing melt of industrial grade silicon outside the furnace can effectively decrease al and ca contents in industrial grade silicon
文摘:為提高工業硅產品質量，採用爐外底吹氧化精煉工業硅熔體，有效地降低了工業硅中鋁、鈣雜質的含量。In this paper, the effect of interface properties of sio2 / sic on performances of n - channel sic mofet are studied systematically : incomplete ionization of impurity in sic is analyzed based on the crystal structure of sic materials. the effect of incomplete ionization of impurity on c - v characteristics of p - type 6h - sic mos is researched based on charge - sheet model for sic mos inversion layers
本文就sio _ 2 / sic界面質量對n溝sicmosfet性能的影響做了深入的研究：從碳化硅材料的晶體結構出發分析了碳化硅材料中雜質的不完全離化，採用sicmos反型層薄層電荷數值模型，研究了雜質不完全離化對p型6h - sicmosc - v特性的影響。The diffusion carrier concentration profile and junction depth were measured and compared with conventional furnace processing diffusion ( cfd ). it presented following conclusions : 1 ) the temperature distribution in quartz chamber of rtd furnace is uniform because square resistance is uniform after rtd ; 2 ) the diffusion velocity of rtd furnace by a factor of three compare to conventional furnace processing diffusion ( rtd ) ; 3 ) if diffusion temperature and doping phosphorus are equivalent, doping phosphorus of rtd are more than of cfd in equivalent distance to the silicon surface
實驗研究了快速熱擴散（ rtd ） ：通過旋塗磷膠和印刷磷漿兩種方式考查了2 4和103 103單晶硅的快速熱擴散特性，發現： 1 ）此樣機的溫度場在空間分佈上是均勻的； 2 ）快速熱擴散可以比傳統擴散快3倍的速度進行擴散； 3 ）在擴散溫度和摻雜磷源相同的條件下，與傳統擴散相比，快速熱擴散將雜質向結更深的地方推進。Test method for determination of impurity concentrations in silicon crystal by photoluminescence spectroscopy
用光致發光光譜法測定硅晶體中雜質濃度的試驗方法At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency
在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage
Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。Through field investigation and analysis indoor, with studying all hydrochemistry data in detail, including macro components and micro components, the author finds out the hydrochemistry feature of ground water. for further specifying the ground water system, with cluster analysis of macro components of surface water and ground water in total 147 samples and the analysis of micro components, including ree, the main ground water systems are distinguished by and large, especially the ground water system main of fault no. 7 and fault no. 15 water bearing belts which have differences at macro and micro components between the two ground water systems, moreover, the main hydrogeochemistry effects are established such as lixiviation, oxidization, precipitation and mixing effect, especially the mixing effect which result in the complexit y of the hydrochemistry of deep bearing tectonic fracture water. based on them, the hydro geological model of upper dam base is established, meanwhile the author summarizes the hydrochemistry feature of weathering crevice water, surface tectonic crevice water and deep tectonic crevice water
為此，本文以大崗山壩區水文地球化學問題為研究對象，通過野外調查和室內分析，詳細的研究了壩區水化學資料，包括宏量組分、微量組分，查明了壩區地下水水化學特徵，對採集的147個地表及地下水樣的宏量組分進行聚類分析，結合微量元素，稀土元素的研究，並應用二氧化硅地熱溫標確定了深部構造裂隙水的熱源深度，基本區分了壩區各個主要地下水水系，特別是以f7 、 f15斷裂含水帶為主的地下水系，它們的宏量組分、微量組分以及稀土等方面均存在差異，以此為基礎，結合壩區水文地質條件，建立了壩區的上壩址的水文地質模型，同時通過分析了壩區花崗巖區的水化學資料，確立了壩區主要的水文地球化學作用，分別為：溶濾作用、氧化作用、沉澱作用、以及混合作用，混合作用是導致深部承壓裂隙水水化學復雜的主要原因，並總結了壩區風化裂隙水、淺部構造裂隙水、深部構造裂隙水的水化學特徵。The gettering processes usually are estimated by gettering of au to nanocavity in silicon. in this paper, the characteristics of nanocavity gettering mechanism, diffusion and distributing of aurum and ion implantation in silicon were described. in this work, many bumps on the polishing surface of the silicon, after a he + impantation in and subsequently a hot - treatment, were observed using atomic force microscope ( afm )
我們注意到，在研究氫、氦離子注入誘生微孔的吸除作用時多以對金雜質的吸除效果來對吸除工藝進行評估，因此本文對微孔吸除機理、金在硅中的擴散和分佈以及半導體中離子注入的特點進行了描述。Chemical analysis methods for non - rare earth impurities of rare earth metals and their oxides - determination of silicon content - molybdenum blue spectrophotometric method
稀土金屬及其氧化物中非稀土雜質化學分析方法硅量的測定鉬藍分光光度法Based on the requirement of the device, we grow the films of silicon of high quality. the thickness of the epilayer is from 0. 4 u m tol p m, the doping concentration can be controlled conveniently
然後，根據器件的要求，利用uhv cvd技術，生長出優質薄硅外延片，其厚度在0 . 4 m 1 m ，摻雜濃度可任意調節，晶體質量良好。Surface chemical analysis - secondary ion mass spectrometry - determination of boron atomic concentration in silicon using uniformly doped materials
表面化學分析.次級離子質譜法.利用均勻摻雜材料測定硅中硼原子濃度Standard test method for trace metallic impurities in electronic grade aluminum - copper, aluminum - silicon, and aluminum - copper - silicon alloys by high - mass - reduction glow discharge mass spectrometer
用高質量減少輝光放電質譜儀測量電子級鋁銅鋁硅和鋁銅硅中微量金屬雜質的標準試驗方法Qimanyuter ophiolite melange crops out 1 - 3 km in width and extends ew - nee about 50 km, parallels to the kunlun mountains. qimanyuter ophiolite melange is composed mainly of serpentinite ( metapyrolite ), peridotite, bedded gabbro, grbbro, diabase sheet and pillow - like and massif basalt as well. associated sedimentary rocks with this ophiolite melange include silicalite, dark gray silicalite and thin - bedded limestone
該混雜巖帶所包含的主要巖性單位包括：蛇紋巖（變輝橄巖） 、橄欖輝石巖、層狀輝長巖、輝長巖、輝綠巖席、枕狀、塊狀、杏仁狀玄武巖，與之共生的沉積巖為紫紅色硅質巖、深灰色硅質巖、薄層灰巖等。The interstitial atoms of gold diffuse into silicon at a rate several orders of magnitude faster than the group iii and v impurities
金的填隙原子向硅擴散的速率比iii族和v族雜質快幾個數量級The swede - field in which she and her companion were set hacking was a stretch of a hundred odd acres, in one patch, on the highest ground of the farm, rising above stony lanchets or lynchets - the outcrop of siliceous veins in the chalk formation, composed of myriads of loose white flints in bulbous, cusped, and phallic shapes
苔絲和她的同伴開始動手挖瑞典蘿卜的那塊田地，是一百多畝的一大片，也是那個農場上最高的一塊，突出在白堊質地層或者砂石混雜的地面上它的外層是白堊質巖層中硅質礦床形成的，裏面混合著無數的白色燧石，有的像球莖，有的像人的牙，有的像人的生殖器。Poly - crystallization silicon thin film transistor ( p - si tft ) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays, as it is most feasible approach to high resolution, high integration and low power consumption as a result of its high aperture ration. there are less number interface of the crystal grain, lower metal impurity and higher mobility in the electric current director, the milc p - si tft has been the research focus in the fields of amlcd, projection display, oled etc. there are vast dangling bonds and bug
多晶硅薄膜晶體管（ p - sitft ）液晶顯示器可以實現高解析度、高集成度、同時有效降低顯示器的功耗，因而成為目前平板顯示領域主要研究方向;而以橫向晶化多晶硅為有源層的tft由於在導電方向有更少的晶界、更低的金屬雜質污染、更高的載流子遷移率而成為目前有源矩陣液晶顯示領域、投影顯示、 oled顯示等領域研究的熱點。Testing of materials for semiconductor technology - determination of impurity content in silicon by infrared absorption - part 1 : oxygen
半導體工藝材料檢驗.用紅外吸收法測量硅的雜質含量A likely contaminant is oxygen, since the glass tube consists mainly of sio2
有可能的雜質是氧，因為玻璃試管主要包括二氧化硅。The activation analysis method for the determination of elemental impurities in semiconductor silicon materials
半導體硅材料中雜質元素的活化分析方法分享友人