硼離子 的英文怎麼說

中文拼音 [pénglízi]
硼離子 英文
boron h2o f ml ml
  • 硼 : 名詞[化學] （非金屬元素） boron （b）
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 離子 : [物理學] ion
  1. This study adopted the ion compound antibacterial to produce the materials of antibacterial glass. two kinds of different carriers are used in this experiment, phosphate and borate system. the antibacterial glass material, which is added ag +, zn2 + through some carriers, has excellent antibacterial property against escherichia coli and staphylococcus aurous

    實驗中採用兩種不同的玻璃載體體系，即磷酸鹽載體和硼硅酸鹽載體，將銀、鋅離子以一定的方式直接加入到玻璃生產的配合料中，一次性熔製成形，能夠制備出對大腸桿菌、金黃色葡萄球菌等細菌具有良好抗菌效果的抗菌玻璃材料。
  2. Calmon has quoted ion exchange costs of $ 0. 120. 30/1000 gal for boron treatment.

    卡爾蒙提出的離子交換樹脂處理硼的費用為012030美元千加侖。
  3. Taed is often used with sodium perborate and sodium percarbonate to form a good bleaching system. the main bleaching agent in this system is peracetate anion, which can increase whiteness and remove dirt, e. g., stains, tea stains, juice, and wine stains

    Taed與過硼酸鈉或過碳酸鈉組合使用作為洗滌過程中的氧化物漂白系統，它們在水中反應後生成的過乙酸陰離子是該系統中的主要漂白劑，起增白、去污（如咖啡、茶、紅酒、咖哩、果汁和蔬菜等污漬）和抗微生物作用。
  4. The fabrication parameters were preliminarily optimized. the morphology and composition of the samples of the diamond film for different b / c ratios was investigated by scanning electron micrograph ( sem ) and raman scattering spectroscopy ( raman ). the content of different levels of b dopant in the diamond film was tested by secondary ion mass spectrometry ( sims )

    闡述了摻硼金剛石膜的制備工藝，研究了摻硼金剛石膜成核和生長的影響因素，初步優化了沉積摻硼金剛石膜工藝參數，同時對摻硼金剛石膜進行了掃描分析、拉曼分析、二次離子質譜分析和電阻率測試。
  5. Borohydride which supported by strongly basic ion exchange resin reduced phseseph giving polymer - supported phenylselenide anion. it reacted with, - unsaturated aldehyde or epoxide to produce corresponding selenide. respective conditions were studied also

    強堿型離子交換樹脂支載的四氫化硼與二苯聯硒反應，得到載體化的苯硒陰離子試劑，它與， -不飽和醛及環氧化物反應，生成相應的硒醚.對各自的反應條件也進行了探討
  6. Experiment on extracting boric acid from brines by 2 - ethyl - 1, 3 - hexanediol

    離子交換法從鹵水中提取硼酸
  7. In recent years researchers have achieved better performance with compounds such as lithium borohydride, in which the metal atoms form weaker, ionic bonds with groups containing several hydrogen atoms

    近年來，研究人員已經製作出效能更佳的復合物，例如硼氫化鋰，在這種金屬氫化物中，金屬原子與氫原子團（由數個氫原子組成）之間，是以較弱的離子鍵鍵結。
  8. A large number of attempt and painstaking experiment have been done in this paper according to existing project. we also do lots of chemical and electrochemical etching research in material of lab6, and find out three kind of methods to produce the field emitting cold cathode including reactive ion etching ( rie ) with oxygen, wet process etching and electrochemical etching. through produce some field emitting cold cathode single tip including lab6 field emitting cold cathode, molybdenum field emitting cold cathode, tungsten field emitting cold cathode, tungsten rhenium field emitting cold cathode, molybdenum covered with lab6 film field emitting cold cathode

    而且，目前可借鑒的參考文獻較少，圍繞著前人做過的方案，本文做了大量工作，在已有文獻介紹的基礎上，結合原有的理論和實踐基礎，摸索出了包括高溫氧作用反應離子（ rie ）刻蝕法、濕法腐蝕法和電化學腐蝕法在內的三種制備工藝，運用電化學腐蝕工藝成功制備了單尖的六硼化鑭場發射冷陰極尖錐、鉬場發射冷陰極尖錐、鎢場發射冷陰極尖錐、鎢錸合金場發射冷陰極尖錐以及有六硼化鑭薄膜覆蓋的鉬場發射冷陰極尖錐。
  9. German standard methods for the analysis of water, waste water and sludge ; anions group d ; determination of borate ions

    德國對水.廢水和淤泥的統一檢驗法.陰離子組.硼
  10. Two kinds of them are widely studied at present. one is the substance whose surface has micro - pore structure or crystal structure with excellent exchanging prosperity, such as silver - zeolite ; the other one generally select the glass with certainly chemical stability and soluble property, which are added a few ag +, zn2 +, cu2 + ion

    目前研究最廣泛的抗菌材料有兩類，一類是物質表面具有微孔結構或具有離子交換性能良好的層狀晶體結構如銀沸石等；另一類通常是選用有一定化學穩定性和水溶性的磷酸鹽和硼酸鹽系統玻璃微載體的含銀、銅、鋅的抗菌玻璃。
  11. Separation of boron by using ion exchange technique for the isotopic measurement of boron in salt lake brine

    鹽湖鹵水硼同位素測定中硼的二次離子交換分離
  12. Surface chemical analysis - secondary - ion mass spectrometry - method for depth profiling of boron in silicon

    表面化學分析.再生離子質量光譜測定.硅中硼的深仿形分析法
  13. Surface chemical analysis - secondary ion mass spectrometry - determination of boron atomic concentration in silicon using uniformly doped materials

    表面化學分析.次級離子質譜法.利用均勻摻雜材料測定硅中硼原子濃度
  14. Determination of boron, arsenic and sulfur in geological samples by inductively coupled plasma atomic emission spectrometry with sample treatment by pressurized decomposition

    電感耦合等離子體原子發射光譜法同時測定地質樣品中硼砷硫
  15. Boron - doped silicon nanowires grown by plasma - enhanced chemical vapor deposition

    等離子體增強化學氣相沉積法實現硅納米線摻硼
  16. With the aid of simplex optimum method and runge - kutta digital solution of differential equation system, the experimental data was fitted. the kinetic equations of the crystallization reactions have been given and the mechanism has been proposed on the basis of existing forms of boroxygen anion in the solution

    運用runge - kutta微分方程組配合單純形優化法擬合出了轉化結晶動力學方程，在確定溶液中硼氧配陰離子存在形式的基礎上提出了相轉化反應機理。
  17. The borohydride reducing reagent supported by the strong acid cation exchange resin was prepared by the strong acid cation exchange resin reacting with sodium borohydride. the reductive ability of the resin reducing the carbonyl compounds is strong, so the yields are generally pretty high ( 51 % ？

    用強酸型離子交換樹脂與硼氫化鈉作用制備了強酸型離子交換樹脂支載的硼氫化還原劑.探討了在不同溶劑中制備的還原樹脂的還原能力；應用於還原羰基化合物時有良好的產率（ 51 % ？
  18. Cubic nitride boron ( c - bn ) films have been prepared at room temperature ( 25 ) by radio frequency plasma enhanced pulsed laser deposition ( rf - pepld ), assisted with substrate negative bias. in this paper, we primarily studied the effect of laser energy density, radio frequency power, substrate bias and depositing time on the growth of c - bn films, and analyzed the formation process and mechanism of c - bn films deposited by rf - pepld method at room temperature

    本文採用偏壓輔助射頻等離子體增強脈沖激光沉積（ rf - pepld ）方法在常溫下（ 25 ）制備立方氮化硼（ c - bn ）薄膜，初步研究了薄膜沉積參數：激光能量密度、射頻功率、基底負偏壓和鍍膜時間對立方氮化硼薄膜生長的影響，並分析了常溫下用rf - pepld方法沉積立方氮化硼薄膜的形成過程和機理。
  19. The c - bn thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system. the c - bn / si thin film heterojunctions have been fabricated with doping into n - type ( p - type ) semiconductor by implanting s ( be ) ions into them. i - v curves of bn / si heterojunctions were obtained by the high resistance meter, c - v curves of bn / si heterojunctions were obtained by the c - v meter

    使用rf射頻濺射系統，在si襯底上沉積氮化硼薄膜，用離子注入的方法在制備好的bn薄膜中分別注入s和be ，成功的制備了bn / sin - p和bn / sip - p薄膜異質結，用高阻儀測得bn薄膜表面電阻率和bn / si薄膜異質結的i - v曲線，用c - v儀測得bn / si薄膜異質結的c - v曲線。
  20. Potentional energy function and vertical ionization potential of boron chloride molecule and molecular ions

    氯化硼分子及離子的勢能函數與垂直電離勢
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