磷摻雜 的英文怎麼說
中文拼音 [līnchānzá]
磷摻雜
英文
phosphor doping-
Practice for conversion between resistivity and dopant density for boron - doped and phosphorus - doped silicon
摻硼磣磷硅單晶電阻率與摻雜劑濃度換算規程The adulteration of dy3 + n gd3 " 1 " ^ la3 + > sm3 " 1 " can inhance the luminesce efficiency, while bi3 + decreases
摻雜適量的dy , gd , la , sm可提高磷光體發光效率,而摻bi則使磷光體強度降低。The influence rule of y2c > 2s : eu, mg, ti long - persistent phosphor fluorescent properity and luminesce intensity is studied with the changing of concentration of mg, ti
研究了不同的mg , ti摻雜量對y2o2s - eu , mg , ti磷光體發光強度和余輝特性的影響規律。A new laser source of optical communication, erbium - ytterbium codoped phosphate glass waveguide laser that was provided with more prominent performance than semiconductor distribution feedback ( dfb ) laser, has been investigated globally from 1990s. the laser can meet many rigorous demands of wdm systems. the 1. 54 m laser emitted by the laser accords with the interrelated standard of international telecommunications union ( itu ), therefore, a splendent foreground can be predicted about this kind of laser in future optical communication
基於鉺、鐿摻雜磷酸鹽玻璃基片的光波導激光器是一種新型通信光源,具有傳統的分佈反饋半導體激光器所不能比擬的優點,能滿足波分復用/密集波分復用技術對光源提出的諸多高新要求,所發射的1 . 54 m激光符合國際電信聯盟規范,在未來光通信中有著廣闊的發展前景。The diffusion carrier concentration profile and junction depth were measured and compared with conventional furnace processing diffusion ( cfd ). it presented following conclusions : 1 ) the temperature distribution in quartz chamber of rtd furnace is uniform because square resistance is uniform after rtd ; 2 ) the diffusion velocity of rtd furnace by a factor of three compare to conventional furnace processing diffusion ( rtd ) ; 3 ) if diffusion temperature and doping phosphorus are equivalent, doping phosphorus of rtd are more than of cfd in equivalent distance to the silicon surface
實驗研究了快速熱擴散( rtd ) :通過旋塗磷膠和印刷磷漿兩種方式考查了2 4和103 103單晶硅的快速熱擴散特性,發現: 1 )此樣機的溫度場在空間分佈上是均勻的; 2 )快速熱擴散可以比傳統擴散快3倍的速度進行擴散; 3 )在擴散溫度和摻雜磷源相同的條件下,與傳統擴散相比,快速熱擴散將雜質向結更深的地方推進。Based on decreasing the production cost and enhancing the high rate performance of this material, this paper adopted a two - step solid - state reaction to improve lifepo4 ` s behavior mainly using carbon coated or doped and mg2 + doped method
本文從降低材料生產成本的同時提高材料的大電流放電性能出發,採用球磨高溫固相法主要針對碳摻雜/包覆和金屬離子摻雜對磷酸亞鐵鋰進行改性。The adulteration of bi3 sm3 + can increase the fluorescent intensity, while dy3 + > gd3 la3 + reduce it ^ specially dy3 " 1 "
摻雜微量bi和sm使余輝強度的提高,但dy 、 la和gd則使磷光體余輝強度有所降低,其中dy較為明顯。It is found that with concentration of eu3 " 1 " increasing, the fluorescent intensity is firstly rising then falling. a suited concentration of eu3 + is found that the fluorescent intensity is highest but the chroma leans to orange
隨eu含量增加,磷光體余輝強度先增加后迅速降低,有一個最適宜摻雜濃度,此時余輝強度達到最高,但色度偏橙。Preparation of semi - insulating material by annealing undoped inp
高溫退火非摻雜磷化銦制備半絕緣材料Phosphate glass is an ideal material for high erbium - doped. erbium ion has large emission section in phosphate glass, however, it has small absorb section for 980nm pump light, which can be settled via doped yb3 +
雖然鉺離子在磷酸鹽玻璃中具有較大的發射截面,但對波長為980nm泵浦光來說,其吸收截面較小,可用鐿離子與之摻雜來補充這一不足。The influence of y _ 2o _ 2s : eu phosphors fluorescent spectra, chroma and luminescence intensity is systematically studied when different concentration of europium is adulterated into different phosphors by means of xrd, fluorescent spectra analysis, time - basing spectra analysis, long - persistent fluorescent spectra analysis and so on ; the influence on y2c > 2s : eu phosphors structure, luminescence intensity and long - persistent curve is investigated when different concentration of mg24 " > ti4 " 1 " is adulterated into different phosphors, finding the most suited concentration of mg2 " * ti4 " 1 " ; base on the suited concentration of mg2 + > ti4 +, the influence rule on phosphors luminescence intensity and long - persistent curve with changing of eu + concentration is also studies. at the same time, by using rare - earths metals adulteration and theory of chroma synthesis, the possibility of sensitized buildup of phosphors and the synthesis of different color long - persistent phosphors is also researched
應用x射線粉末衍射( xrd ) 、熒光光譜、時間分辨光譜及磷光體長余輝壽命測試等綜合實驗手段,較系統地研究了摻雜eu對熒光體y2o2s : eu熒光體的發光光譜、色度和發光強度的影響;研究了不同mg , ti含量對磷光體基質結構性能、發光強度與余輝曲線的影響及其適宜的摻雜濃度;基此,研究了在給定mg , ti含量時,不同eu摻量對磷光體發光強度和余輝的影響規律;從稀土摻雜和色度合成原理分別探討了eu的發光敏化增強和制備不同光色長余輝磷光體的可能性。Several kinds of inorganic solid proton conductors including zirconium phosphates, heteropolyacids ( hpa ) and hydrogen sulfates and three kinds of methods such as hybrid solid casting, exchange - precipitation process and sol - gel process which can incorporate the inorganic solid proton conductors in pems were introduced
摘要主要介紹了目前摻雜質子交換膜用的幾種無機質子導體磷酸鋯、雜多酸、硫酸氫鹽等,並進一步介紹了將這些無機質子導體引入到聚合物中的3種摻雜方法:混合澆鑄法、離子沉澱法和溶膠凝膠法。Catalytic synthesis of cyclohexanone ethylene ketal with h3pw12o40 pan
磷鎢雜多酸摻雜聚苯胺催化合成環己酮乙二醇縮酮As far as the new technology of selective diffusion, the method of printing is used and the phosphoric paste ( high concentration ) is printed at the electrode - site in silicon. afterwards, a thin layer of phosphoric source ( low concentration ) is sprayed on the surface of the non - electrode - site in silicon
在選擇性擴散新工藝中,我們採用絲網印刷電極的方法在矽片的電極位置印刷濃度較高的磷漿(摻磷sio _ 2乳膠) ,在非電極區噴塗一層濃度較低的磷源,擴散后形成重摻雜和輕摻雜。The main contents of the thesis are as following : ( 1 ) thermal neutrons irradiating the silicon wafer gives rise to fractional transmutation of silicon into phosphorus and dopes the silicon n - type. the method of p - type doping zno by proton transmutation doping was presented by reference to that of the silicon
本論文的主要內容和結果如下: ( 1 )借用「熱中子輻照矽片使部分硅嬗變為磷,從而將硅摻雜成n型」的思想,從質子嬗變角度討論了實現zno材料的p型摻雜方案。Poly ( diphenylamiline ) ( pdpa ) doped with h _ 3pw _ ( 12 ) o _ ( 40 ) was synthesized in solid - state method. the electrochemical capacitor performances were researched with cyclic voltammetry, charge - discharge and electrochemical impedance techniques. this material has low resistance in 0. 5 mol / l hcl solutions
我們對聚二苯胺的電化學電容行為進行了研究,磷鎢酸摻雜的聚二苯胺電極在0 . 5mol / lhcl水溶液中電阻較小,具有電化學電容特性。Based on these above, the practical realization of bnxpi - x film applied in the ultraviolet band detecting device - ultraviolet liquid crystal light valve is discussed. the experiments and theory analyses prove that bnxpi - x film is a suitable candidate for ultraviolet liquid crystal light valve
在以上對氮化硼薄膜以及磷摻雜氮化硼薄膜制備工藝、性能和微結構研究分析的基礎上,本論文還探討了薄膜材料在紫外空間光探測器件?紫外液晶光閥上應用的可行性。Ternary compound bnxpi - x films of quality are deposited and the ultraviolet absorbance characteristics of bnxp, - x films were investigated in the thesis, too. with the quantity of phosphorus dopant, the optical bandgap modulation of bnxpi is achieved successfully. in addition, the combined intensity of bnxp, - x films and substrates was enhanced by depositing the buffer layer
實驗採用磷對氮化硼進行摻雜,成功地在光學石英玻璃襯底上沉積了磷摻雜氮化硼( bn _ xp _ ( 1 - x ) )薄膜,研究了該薄膜的紫外光敏特性,其吸收邊在240nm 400nm的紫外波段內可以連續變化,同時也實現了對氮化硼光學帶隙在3 . 8ev 5 . 3ev范圍內的連續可控調制。Application of phosphorus fertilizer to no tillage cropping systems appears to be complicated by the fact that it cannot be incorporated
免耕耕作制下磷肥的施用似乎很復雜,因為此時無法將磷肥和土壤摻混。分享友人