膜穩定因子 的英文怎麼說

中文拼音 [wěndìngyīnzi]
膜穩定因子 英文
membrane stabilizing factor
  • : 名詞1. [生物學] (像薄皮的組織) membrane 2. (像膜的薄皮) film; thin coating
  • : 形容詞1 (穩定; 穩當) steady; stable; firm 2 (穩重) steady; staid; sedate 3 (穩妥) sure; rel...
  • : Ⅰ形容詞1 (平靜; 穩定) calm; stable 2 (已經確定的; 不改變的) fixed; settled; established Ⅱ動詞...
  • : Ⅰ動詞[書面語] (沿襲) follow; carry on Ⅱ介詞1 [書面語] (憑借; 根據) on the basis of; in accord...
  • : 子Ⅰ名詞1 (兒子) son 2 (人的通稱) person 3 (古代特指有學問的男人) ancient title of respect f...
  • 穩定 : 1 (使穩定) stabilize; steady 2 (穩固安定) stable; steady 3 (物質的性能不易改變的作用) stabi...
  1. Researches of schistosomiasis vaccines have gone more than 60 years, approximately including from the stages of dead vaccine and live vaccine ( irradiated attenuated cercariae vaccine ) to gene engineered vaccine, etc. many different forms of vaccines have been tested in animal models, including gluthathione s - transferase, paramyosin, irv - 5, triose phosphate isomerase, sm23, fatty acid binding protein ; which were considered promising by who / tdr. but none of them steadily accomplished the pre - set target level of 40 % protection. in order to enhance the protective capacity further, it is essential to develop novel vaccine antigens and / or vaccine adjuvants

    血吸蟲病疫苗研究已有60多年的歷史,大致經歷了死疫苗、活疫苗(照射致弱尾蚴疫苗)和基工程疫苗等研究階段,產生了一些who / tdr推薦認為很有希望的疫苗候選分,如谷胱甘肽- s -轉移酶( gst ) 、副肌球蛋白( sm97 ) 、照射致弱疫苗抗原5 ( irv - 5 ) 、磷酸丙糖異構酶( tpi ) 、曼氏血吸蟲內在蛋白( sm23 )和脂肪酸結合蛋白( fabp , sm14 )等,但其對宿主的保護作用均不甚理想,未能地達到40或以上的保護力水平,此有必要繼續尋找新的疫苗抗原分和/或疫苗佐劑,進一步提高其保護力。
  2. According the key factors we find, we bring forward a new conception : multilevel suppressor and design a new high performance suppressor whose ion - exchange membrane has bigger areas and using three electrodes including one cathode ( anode ) and two anodes ( cathode ), at the same time we fill the suppression compartment with one kind of ion exchange resin which has moderate exchange capacity. according to our experiment ' s results, we find the new type suppressor has quite high working current efficiency and suppressing capacity. in most cases, the suppressor ' s current efficiency is over 90 % ; the suppressor can transform the naoh ( concentration : 200mmol / l, flow rate : i. oml / min, conductance : over 10000 i - i s cm " ) to pure water ( conductance : 8. 9 it s cm in chapter 3, the high performance suppressor is applied in determination some trace - amounts ions in plating solution, sewage. in this chapter, we also have a research on the gradient ion chromatography

    第二章首先以xyz - 1型電化學抑制柱為例,分析了電化學抑制柱的抑制過程得出影響抑制容量的主要素主要是抑制柱的電流效率和離交換的極限電流密度,此採用中等交換能力的離交換樹脂作為抑制室的填料以提高電流效率,在通常情況下電流效率可達到90以上;在選用同種離交換的前提下,可通過增加離交換的有效面積達到提高極限電流的目的從而提高抑制柱的抑制容量,此提出了多級抑制的概念並據此研製了共電極式高容量電化學抑制柱,該抑制柱最高可將流速為1 . 0ml / min ,濃度為200mmol / l電導率超過10000 s ? cm ~ ( - 1 )氫氧化鈉溶液抑制為電導率低至8 . 9 s ? cm ~ ( - 1 )的純水,並且具有性高、分析結果準確等優點。
  3. By increasing the h2 dilution ratio, it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase. from the study on the distance from substrate to catalyzer, choosing a proper distance can ensure the gas fully decomposed, while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes. the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier

    實驗結果表明:隨著工作氣壓的減小,薄的晶粒尺寸有所減小;通過提高氫氣稀釋度,利用原氫在成過程中起的刻蝕作用,可以結晶相併去除雜相;選擇適當的熱絲距離能保證反應氣體充分分解,又使襯底具有較高的過冷度,是形成納米薄的重要條件;採用分步碳化法可以提高形核密度,有利於獲得高質量的納米- sic薄;襯底施加負偏壓可以明顯提高襯底表面的基團的活性,負偏壓產生的離轟擊還能造成高的表面缺陷密度,形成更多的形核位置。
  4. Al - doped zno ( azo ) thin films are emerging as an alternative potential candidate for ito ( sn - doped in2o3 ) films recently not only because of their comparable optical and electrical properties ( high optical transparency in the visible range, infrared reflectance and low d. c. resistivity ) to ito films, but also because of their higher thermal and chemical stability under the exposure to hydrogen plasma than ito

    Al摻雜的zno薄,由於具有與ito ( in _ 2o _ 3中適量摻雜sn )薄相比擬的對可見光的高透過率和高電導,又其在氫等離體中的高性等優點,已成為替代ito透明導電薄的研究熱點。
  5. In recent years, al - doped zno ( azo ) thin films has become a hot issue of transparent conductive thin films field and preferred materials instead of ito films not only because of their comparable optical and electrical properties ( high optical transparency in the visible range, low electrical resistivity ) to ito films, but also because of their lower price and higher thermal and chemical stability under the exposure to hydrogen plasma than ito

    近年來,由於al摻雜的zno薄( azo )具有與ito薄相比擬的光電性能(可見光區高透射率和低電阻率) ,又其價格較低以及在氫等離體中的高性等優點,已經成為替代昂貴的ito薄的首選材料和當前透明導電薄領域的研究熱點之一。
  6. The results showed that the addition of sio2 resulted in acute enhancement of pure water flux combined with unchanged rejection properties, and the improving factor of pes membrane flux was above 4

    Sio _ 2的加入,使pu和pes平板的水通量大幅度提高,而截留率相對保持,其中pes平板的水通量改善超過4 。
  7. Much attention has been paid on pure or doped zirconia thin films because of their high melting point, low heat conductivity, high ionic conductivity and chemical durability. in the case of metal - oxide - semiconductor ( mos ) devices and high - temperature superconductor ( hts ) wires, zirconia epitaxial thin films are promising buffer layers and have been intensely studied in the past two decades

    純的或摻雜的氧化鋯薄其高熔點、低熱導率、高離導電能力和高溫化學性而受到相當的重視,而且氧化鋯外延薄在金屬氧化物半導體( mos ) 、高溫超導帶材等領域的應用受到越來越多的關注。
  8. And one end of the modifying molecule links substrate through silane molecule, the other end catches tio2 particle with sulfo group, so the film has large surface area and excellent stability

    該修飾分一端通過硅烷分連接載體,另一端利用磺酸基來捕捉二氧化鈦粒此二氧化鈦薄具有較大的表面積和優異的性。
  9. Poor thermal stability as a bottleneck has limited the development of liquid crystal photo - alignment technique. the intrinsic reason is that the photosensitive polymer has large space resistance and decreases the reaction degree of the directional photo - polymerization. the effective solution is focused in the increase of orientational order of photo - alignment film

    光控取向技術瓶頸問題是性差,其根本原是光敏高分空間位阻太大,向交聯的反應度太低,有效解決方法應是降低位阻,提高向交聯度和取向鏈段的有序度。
  10. Atomic layer deposition ( ald ) has attracted a lot of attention recently for its excellent deposition abilities, such as almost 100 % step coverage, accurate thickness control, large area uniformity, excellent process stability, and low processing temperatures

    摘要最近原層沉積( ald )吸引著許多的注意,原在於它傑出的沉積技術能力,例如幾乎100 %的階梯覆蓋、精準的薄厚度控制、大面積薄的均勻性、優異的製程度與低溫的製程。
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